Direct imprinting of porous substrates
Provided are methods of patterning porous materials on the micro- and nanometer scale using a direct imprinting technique. The present methods of direct imprinting of porous substrates (“DIPS”), can utilize reusable stamps that may be directly applied to an underlying porous material to selectively, mechanically deform and/or crush particular regions of the porous material, creating a desired structure. The process can be performed in a matter of seconds, at room temperature or higher temperatures, and eliminates the requirement for intermediate masking materials and etching chemistries.
1. A method of imprinting a porous nanomaterial, the method comprising:
providing a first stamp, the first stamp having a plurality of first protrusions and a plurality of first recesses defined on a surface thereof, wherein the surface of the first stamp is made of silicon;
applying the first stamp to a porous nanomaterial having a porosity of about 20% to about 95% and comprising pores less than 1 μm; and
forming a plurality of second protrusions and a plurality of second recesses defined therebetween in the porous nanomaterial, wherein the plurality of second protrusions and the plurality of second recesses are complementary to the plurality of first recesses and the plurality of first protrusions, respectively, wherein each of the plurality of second protrusions has a width of less than about 10 μm, and wherein the porous nanomaterial comprises at least one of porous silicon, nanoporous gold, porous alumina, porous titanium dioxide, and mixtures thereof.
2. The method of claim 1 , wherein each of the plurality of second recesses has a depth of about 1 nm to about 100 μm.
3. The method of claim 1 , wherein each of the plurality of second recesses has a depth of less than about 800 nm.
4. The method of claim 1 , wherein the method is conducted at about room temperature.
5. The method of claim 1 , further comprising the steps of:
rotating the first stamp;
applying the first stamp to the porous nanomaterial; and
removing the first stamp from contact with the porous nanomaterial.
6. The method of claim 1 , further comprising the steps of:
applying a second stamp to the porous nanomaterial, the second stamp having a plurality of third protrusions and a plurality of third recesses defined on a surface thereof, wherein the surface of the second stamp is made of silicon, and wherein the second stamp comprises a different pattern than the first stamp;
forming a plurality of fourth protrusions and a plurality of fourth recesses defined therebetween in the porous nanomaterial, wherein the plurality of fourth protrusions and the plurality of fourth recesses are complementary to the plurality of third recesses and the plurality of third protrusions, respectively; and
removing the second stamp from contact with the porous nanomaterial.
7. The method of claim 1 , wherein the first stamp compresses regions of the porous nanomaterial by less than about 100 μm.
8. The method of claim 1 , wherein the first stamp compresses regions of the porous nanomaterial by less than about 1 μm.
9. The method of claim 1 , wherein the first stamp compresses regions of the porous nanomaterial by about 100 nm to about 10 μm.
10. A method of imprinting a porous nanomaterial, the method comprising:
providing a first stamp, the first stamp having a plurality of first protrusions and a plurality of first recesses defined on a surface thereof, wherein the surface of the first stamp is made of silicon;
applying the first stamp to a porous nanomaterial, wherein the nanomaterial comprises pores less than 1 μm; and
compressing regions of the porous nanomaterial by at least about 10% to form a plurality of second protrusions and a plurality of second recesses defined therebetween, wherein the plurality of second protrusions and the plurality of second recesses are complementary to the plurality of first recesses and the plurality of first protrusions, respectively, wherein each of the plurality of second protrusions has a width of less than about 10 μm, and wherein the porous nanomaterial comprises at least one of porous silicon, nanoporous gold, porous alumina, porous titanium dioxide, and mixtures thereof.
11. The method of claim 10 , wherein the porous nanomaterial comprises porous silicon.
12. The method of claim 11 , wherein the porous silicon has a porosity of about 30% to about 90%.
13. The method of claim 10 , wherein the first stamp is a reusable stamp.
14. The method of claim 10 , wherein the first stamp is a pre-mastered stamp.
15. The method of claim 10 , wherein the porous nanomaterial is mounted on a substrate.
16. The method of claim 15 , wherein the substrate comprises at least one of silicon, glass, metal, quartz, plastic, and combinations thereof.
17. The method of claim 10 , wherein the first stamp exerts at least about 50 N/mm 2 to about 500 N/mm 2 of pressure on the porous nanomaterial.
18. The method of claim 10 , wherein the first stamp contacts the porous nanomaterial for about 1 second to about 5 seconds.
19. The method of claim 10 , further comprising the steps of:
rotating the first stamp;
applying the first stamp to the porous nanomaterial; and
removing the first stamp from contact with the porous nanomaterial.
20. The method of claim 10 , further comprising the steps of:
applying a second stamp to the porous nanomaterial, the second stamp having a plurality of third protrusions and a plurality of third recesses defined on a surface thereof, wherein the surface of the second stamp is made of silicon, and;
removing the second stamp from contact with the porous nanomaterial.
21. The method of claim 10 , wherein the first stamp compresses regions of the porous nanomaterial by less than about 100 μm.
22. The method of claim 10 , wherein the first stamp compresses regions of the porous nanomaterial by less than about 1 μm.
23. The method of claim 10 , wherein the first stamp compresses regions of the porous nanomaterial by about 100 nm to about 10 μm.
24. A method of imprinting a porous nanomaterial, the method comprising:
providing a first stamp, the first stamp having a plurality of first protrusions and a plurality of first recesses defined on a surface thereof, wherein the surface of the first stamp is made of silicon;
applying the first stamp to a porous nanomaterial having a porosity of greater than about 20%, wherein the porous nanomaterial comprises pores less than 1 μm; and
forming a plurality of second protrusions in the porous nanomaterial, wherein each of the plurality of second protrusions has a height of about 1 nm to about 100 μm and a width of less than about 10 μm, wherein the plurality of second protrusions and the plurality of second recesses are complementary to the plurality of first recesses and the plurality of first protrusions, respectively, and wherein the porous nanomaterial comprises at least one of porous silicon, nanoporous gold, porous alumina, porous titanium dioxide, and mixtures thereof.
25. The method of claim 1 , wherein the plurality of second protrusions comprise an ordered array.
26. The method of claim 25 , wherein the plurality of second protrusions in the ordered array comprise a plurality of uniform protrusions alternating with uniform recesses therebetween.
27. The method of claim 1 , wherein the porous nanomaterial is supported on a substrate and wherein imprinting the porous nanomaterial further comprises overstamping the porous nanomaterial such that the first stamp makes contact with the substrate.
28. The method of claim 1 , wherein the porous nanomaterial comprises pores less than 100 nm.
29. The method of claim 24 , further comprising a step of etching the porous nanomaterial following forming protrusions in the porous nanomaterial.