Methods for removing particles from etching chamber
A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
1. A method comprising:
forming a coating layer in a dry etching chamber;
placing a wafer into the dry etching chamber;
etching a metal-containing layer of the wafer;
moving the wafer out of the dry etching chamber; and
after the wafer is moved out of the dry etching chamber, removing the coating layer.
2. The method of claim 1 , wherein between the forming the coating layer and the removing the coating layer, a single wafer is etched.
3. The method of claim 1 , wherein the forming the coating layer comprises forming a SiClO x layer, with x being three or four.
4. The method of claim 1 , wherein the forming the coating layer comprises forming a silicon oxide layer comprising SiO or SiO 2 .
5. The method of claim 1 , wherein when the forming the coating layer and the etching the metal-containing layer of the wafer are performed, a gas-flow re-distributor is located in the dry etching chamber, with the gas-flow re-distributor comprising:
an inner edge encircling a wafer station, wherein the wafer is placed on the wafer station;
an outer edge concentric with the inner edge; and
a plurality of through-holes between the inner edge and the outer edge.
6. The method of claim 5 further comprising performing an in-situ etching process to remove metal particles on a surface of the gas-flow re-distributor.
7. The method of claim 1 , wherein the coating layer is deposited on upper parts of an inner surface of the dry etching chamber, and not is deposited on lower parts of the inner surface of the dry etching chamber.
8. The method of claim 1 , wherein the forming the coating layer is performed at a chamber pressure in a range between about 10 mTorr and about 30 mTorr.
9. A method comprising:
placing a wafer into a dry etching chamber, with a gas-flow re-distributor located in the dry etching chamber, wherein the gas-flow re-distributor comprises:
an inner edge encircling a wafer station, wherein the wafer is placed on the wafer station;
an outer edge concentric with the inner edge; and
a plurality of through-holes between the inner edge and the outer edge;
etching a metal-containing layer of the wafer;
moving the wafer out of the dry etching chamber; and
after the wafer is moved out of the dry etching chamber, performing an in-situ etching process to remove metal particles from a surface of the gas-flow re-distributor.
10. The method of claim 9 , wherein the in-situ etching process comprises etching aluminum fluoride particles from the surface the gas-flow re-distributor.
11. The method of claim 9 , wherein the etching the metal-containing layer of the wafer comprises etching an aluminum-containing layer of the wafer.
12. The method of claim 9 further comprising:
before the placing the wafer into the dry etching chamber, forming a coating layer in a dry etching chamber; and
after the wafer is moved out of the dry etching chamber, removing the coating layer.
13. The method of claim 12 , wherein the placing the wafer, the etching the metal-containing layer, the moving the wafer, the in-situ etching process, and the removing the coating layer are performed in each of a plurality of cycles, wherein in each of the plurality of cycles, a single wafer is etched.
14. The method of claim 12 , wherein the forming the coating layer comprises forming a silicon-based oxide layer.
15. A method comprising:
conducting a first process gas into a process chamber, wherein a wafer station is resided in the process chamber;
reacting the first process gas to deposit a coating layer on an inner sidewall of the process chamber;
placing a wafer into the process chamber having the coating layer;
performing a dry etch on the wafer;
retrieving the wafer out of the process chamber; and
conducting a second process gas into the process chamber to remove the coating layer.
16. The method of claim 15 , wherein the first process gas comprises a silicon-containing gas.
17. The method of claim 15 , wherein the reacting the first process gas to deposit the coating layer is performed when the wafer station is resided in the process chamber.
18. The method of claim 15 , wherein the coating layer is formed on sidewalls of an upper portion of the process chamber, and is not formed on sidewalls of a lower portion of the process chamber.
19. The method of claim 15 , wherein the dry etch on the wafer comprises etching an aluminum-containing layer of the wafer.
20. The method of claim 15 , wherein between the depositing the coating layer and the removing the coating layer, a single wafer is etched.