Solid state imaging device and manufacturing method, and electronic apparatus
A solid state imaging device includes a substrate, in which the substrate includes a photoelectric conversion unit that generates a charge according to a light amount of incident light by a pixel unit, an accumulation unit that divides the charge of the pixel unit which is generated in the photoelectric conversion unit and accumulates the charge, a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the pixel unit, and a second element isolation unit that is formed at a boundary of the accumulation unit of a divided unit of the pixel.
1. An imaging device comprising:
a plurality of pixels, wherein at least one pixel of the plurality of pixels includes:
a photoelectric conversion unit that generates a charge for the at least one pixel according to an amount of incident light,
a plurality of accumulation units that divides the charge of the at least one pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the at least one pixel,
a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the at least one pixel and between a photoelectric conversion unit of an adjacent pixel, and
a second element isolation unit that is formed between each accumulation unit of the plurality of accumulation units of the at least one pixel and between another accumulation unit of an adjacent pixel.
2. The imaging device according to claim 1 ,
wherein the photoelectric conversion unit is formed on a side of a substrate which is irradiated with the incident light, and
the first element isolation unit is formed on the side of the substrate which is irradiated with the incident light.
3. The imaging device according to claim 1 , further comprising a light shielding unit that is arranged on a substrate of the first element isolation unit to shield the incident light.
4. The imaging device according to claim 1 , wherein a color filter is arranged on a substrate of the photoelectric conversion unit.
5. The imaging device according to claim 1 , further comprising a lens that is arranged on a substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit.
6. The imaging device of claim 1 , wherein the plurality of accumulation units is located between the photoelectric conversion unit and a surface side of a substrate containing the at least one pixel.
7. A method of manufacturing an imaging device, comprising:
forming, on a substrate, a photoelectric conversion unit that generates a charge for a pixel according to an amount of incident light;
forming, on the substrate, a plurality of accumulation units that divides the charge of the pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the pixel;
forming, on the substrate, a first element isolation unit at a boundary of the photoelectric conversion unit of the pixel and between a photoelectric conversion unit of an adjacent pixel; and
forming, on the substrate, a second element isolation unit between each accumulation unit of the plurality of accumulation units of the pixel and between another accumulation unit of an adjacent pixel.
8. The method of manufacturing according to claim 7 , further comprising:
forming the photoelectric conversion unit on a side which is irradiated with the incident light, and
forming the first element isolation unit on the side which is irradiated with the incident light.
9. The manufacturing method according to claim 7 , further comprising forming a light shielding unit that is arranged on the substrate of the first element isolation unit to shield the incident light.
10. The manufacturing method according to claim 7 , further comprising forming a color filter on the substrate of the photoelectric conversion unit.
11. The manufacturing method according to claim 7 , further comprising forming a lens on the substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit.
12. An electronic apparatus comprising:
a substrate including a plurality of pixels, wherein at least one pixel of the plurality of pixels includes:
a photoelectric conversion unit that generates a charge for the at least one pixel according to an amount of incident light,
a plurality of accumulation units that divides the charge of the at least one pixel generated in the photoelectric conversion unit and accumulates the divided charge, wherein the plurality of accumulation units accumulates the divided charge from the same photoelectric conversion unit of the at least one pixel,
a first element isolation unit that is formed at a boundary of the photoelectric conversion unit of the at least one pixel and between a photoelectric conversion unit of an adjacent pixel, and
a second element isolation unit that is formed between each accumulation unit of the plurality of accumulation units of the at least one pixel and between another accumulation unit of an adjacent pixel.
13. The electronic apparatus according to claim 12 ,
wherein the photoelectric conversion unit is formed on a side of the substrate which is irradiated with the incident light, and
the first element isolation unit is formed on the side of the substrate which is irradiated with the incident light.
14. The electronic apparatus according to claim 12 , further comprising a light shielding unit that is arranged on the substrate of the first element isolation unit to shield the incident light.
15. The electronic apparatus according to claim 12 , further comprising a color filter arranged on the substrate of the photoelectric conversion unit.
16. The electronic apparatus according to claim 12 , further comprising a lens that is arranged on the substrate of the photoelectric conversion unit to concentrate the incident light to the photoelectric conversion unit.