Power amplifying module
The linearity of a power amplifying module employing an envelope tracking scheme is improved. The power amplifying module includes a first bipolar transistor having a base to which a first radio frequency signal is input and an emitter grounded, and a second bipolar transistor having a base to which a first constant voltage is applied, a collector to which a first power supply voltage is applied, the first power supply voltage adapted to vary in accordance with an amplitude of the first radio frequency signal, and an emitter connected to a collector of the first bipolar transistor. The second bipolar transistor is configured to output a first amplified signal, obtained by amplifying the first radio frequency signal, from the collector of the second bipolar transistor.
1. A power amplifying module comprising:
a first bipolar transistor having a base to which a first radio frequency signal is input and an emitter grounded; and
a second bipolar transistor having a base to which a first constant voltage is applied, a collector to which a first power supply voltage is applied, the first power supply voltage adapted to vary in accordance with an amplitude of the first radio frequency signal, and an emitter connected to a collector of the first bipolar transistor, the second bipolar transistor configured to output a first amplified signal, obtained by amplifying the first radio frequency signal, from the collector of the second bipolar transistor;
a third bipolar transistor connected in an emitter-follower connection manner to the base of the first bipolar transistor and configured to supply a bias to the first bipolar transistor based on a first bias control voltage applied to a base of the third bipolar transistor; and
a constant voltage circuit configured to generate the first constant voltage based on the first bias control voltage.
2. The power amplifying module according to claim 1 , further comprising:
a fourth bipolar transistor having a base to which a second radio frequency signal is input and an emitter grounded,
wherein the first power supply voltage adapted to vary in accordance with an amplitude of the first or second radio frequency signal selectively input is input to the collector of the second bipolar transistor, wherein the emitter of the second bipolar transistor is connected to the collector of the first bipolar transistor and to a collector of the fourth bipolar transistor, and wherein the second bipolar transistor is configured to output the first amplified signal, obtained by amplifying the first or second radio frequency signal, from the collector of the second bipolar transistor.
3. The power amplifying module according to claim 2 , further comprising:
a third bipolar transistor connected in an emitter-follower connection manner to the base of the first bipolar transistor and configured to supply a bias to the first bipolar transistor based on a first bias control voltage applied to a base of the third bipolar transistor;
a fifth bipolar transistor connected in an emitter-follower connection manner to the base of the fourth bipolar transistor and configured to supply a bias to the fourth bipolar transistor based on a second bias control voltage applied to a base of the fifth bipolar transistor; and
a constant voltage circuit configured to generate the first constant voltage based on the first or second bias control voltage.
4. The power amplifying module according to claim 3 , further comprising:
a first control terminal to which the first bias control voltage is input, the first control terminal connected to the base of the third bipolar transistor and to the constant voltage circuit; and
a second control terminal to which the second bias control voltage is input, the second control terminal connected to the base of the fifth bipolar transistor and to the constant voltage circuit.
5. The power amplifying module according to claim 1 , further comprising:
a sixth bipolar transistor having a base to which the first amplified signal is input and an emitter grounded; and
a seventh bipolar transistor having a base to which a second constant voltage is applied, a collector to which a second power supply voltage is applied, the second power supply voltage adapted to vary in accordance with the amplitude of the first radio frequency signal, and an emitter connected to a collector of the sixth bipolar transistor, the seventh bipolar transistor configured to output a second amplified signal, obtained by amplifying the first amplified signal, from the collector of the seventh bipolar transistor.
6. The power amplifying module according to claim 1 , further comprising:
a sixth bipolar transistor having a base to which the first amplified signal is input and an emitter grounded; and
a seventh bipolar transistor having a base to which a second constant voltage is applied, a collector to which a second power supply voltage is applied, the second power supply voltage adapted to vary in accordance with the amplitude of the first radio frequency signal, and an emitter connected to a collector of the sixth bipolar transistor, the seventh bipolar transistor configured to output a second amplified signal, obtained by amplifying the first amplified signal, from the collector of the seventh bipolar transistor.
7. The power amplifying module according to claim 2 , further comprising:
a sixth bipolar transistor having a base to which the first amplified signal is input and an emitter grounded; and
a seventh bipolar transistor having a base to which a second constant voltage is applied, a collector to which a second power supply voltage is applied, the second power supply voltage adapted to vary in accordance with the amplitude of the first radio frequency signal or the second radio frequency signal, and an emitter connected to a collector of the sixth bipolar transistor, the seventh bipolar transistor configured to output a second amplified signal, obtained by amplifying the first amplified signal, from the collector of the seventh bipolar transistor.
8. The power amplifying module according to claim 3 , further comprising:
a sixth bipolar transistor having a base to which the first amplified signal is input and an emitter grounded; and
a seventh bipolar transistor having a base to which a second constant voltage is applied, a collector to which a second power supply voltage is applied, the second power supply voltage adapted to vary in accordance with the amplitude of the first radio frequency signal or the second radio frequency signal, and an emitter connected to a collector of the sixth bipolar transistor, the seventh bipolar transistor configured to output a second amplified signal, obtained by amplifying the first amplified signal, from the collector of the seventh bipolar transistor.
9. The power amplifying module according to claim 4 , further comprising:
a sixth bipolar transistor having a base to which the first amplified signal is input and an emitter grounded; and
a seventh bipolar transistor having a base to which a second constant voltage is applied, a collector to which a second power supply voltage is applied, the second power supply voltage adapted to vary in accordance with the amplitude of the first radio frequency signal or the second radio frequency signal, and an emitter connected to a collector of the sixth bipolar transistor, the seventh bipolar transistor configured to output a second amplified signal, obtained by amplifying the first amplified signal, from the collector of the seventh bipolar transistor.