Electronic circuitry having superconducting tunnel junctions with functional electromagnetic-responsive tunneling regions
View Patent ↗A device includes at least one superconducting tunnel junction having a junction region comprising a junction barrier material responsive to electromagnetic fields within the MHz to THz range. The junction may be contained within a bi-SQUID loop having two main junctions and a center junction. The junction barrier material for the main junctions may have different electromagnetic-responsive properties than the junction barrier material for the center junction. The junction barrier material may include type-I multiferroics, type-II multiferroics, a composite multiferroic including layers of magnets and ferroelectrics, or piezoelectric materials. An array of connected bi-SQUID loops may be formed, where the main junctions of each bi-SQUID loop in each row are connected. The electromagnetic-responsive properties of the junction barrier material for center junctions of each bi-SQUID loop may vary by each array column or row. The center/main junctions of each bi-SQUID loop may be connected to an input signal line.
1. A device comprising:
at least one superconducting tunnel junction having a junction region comprising a junction barrier material having physical properties that change under exposure to electromagnetic fields within the MHz to THz frequency range, wherein the change tunes a characteristic performance of the superconducting tunnel junction.
2. The device of claim 1 , wherein the at least one superconducting tunnel junction is contained within a superconducting quantum interference device (SQUID) loop.
3. The device of claim 2 , wherein the SQUID loop is a bi-SQUID loop.
4. The device of claim 3 , wherein the at least one superconducting tunnel junction comprises at least two main junctions and a center junction, wherein the multiferroic superconducting junction barrier material for the main junctions has different electromagnetic-responsive properties than the multiferroic superconducting junction barrier material for the center junction.
5. The device of claim 1 , wherein the physical properties comprise frequency-dependent properties.
6. The device of claim 1 , wherein the multiferroic superconducting junction barrier material is selected from the group of naturally-occurring multiferroics consisting of type-I multiferroics and type-II multiferroics.
7. The device of claim 1 , wherein the superconducting junction barrier material comprises a composite multiferroic material that includes layers of known magnets and ferroelectrics.
8. The device of claim 1 , wherein the superconducting junction barrier material comprises a piezoelectric material.
9. A device comprising:
a plurality of connected SQUID loops, wherein each SQUID loop comprises at least one superconducting tunnel junction having a junction region comprising a junction barrier material having physical properties that change under exposure to electromagnetic fields ranging from MHz to THz frequencies, wherein the change tunes a characteristic performance of the superconducting tunnel junction.
10. The device of claim 8 , wherein each SQUID loop is a bi-SQUID loop, wherein the at least one superconducting tunnel junction for each bi-SQUID loop comprises at least two main junctions and a center junction.
11. The device of claim 10 , wherein for each bi-SQUID loop the junction barrier material for the main junctions has different electromagnetic-responsive properties than the junction barrier material for the center junction.
12. The device of claim 10 , wherein the main junctions of each bi-SQUID loop are directly connected to an input signal line.
13. The device of claim 12 , wherein for each bi-SQUID loop the junction barrier material for the main junctions has different electromagnetic-responsive properties than the junction barrier material for the center junction.
14. The device of claim 10 , wherein the center junctions of each bi-SQUID loop are directly connected to an input signal line.
15. The device of claim 14 , wherein for each bi-SQUID loop the junction barrier material for the main junctions has different electromagnetic-responsive properties than the junction barrier material for the center junction.
16. A device comprising:
an array comprising m rows and n columns of connected bi-SQUID loops, wherein each bi-SQUID loop comprises at least one superconducting tunnel junction having a junction region comprising a multiferroic superconducting junction barrier material having physical properties that change under exposure to electromagnetic fields ranging from MHz to THz frequencies, wherein the change tunes a characteristic performance of the superconducting tunnel junction.
17. The device of claim 16 , wherein the at least one superconducting tunnel junction for each bi-SQUID loop comprises at least two main junctions and a center junction, wherein the multiferroic superconducting junction barrier material for the main junctions has different electromagnetic-responsive properties than the multiferroic superconducting junction barrier material for the center junction.
18. The device of claim 16 , wherein the main junctions of each bi-SQUID loop in each of the m rows are directly connected to an input signal line.
19. The device of claim 18 , wherein the electromagnetic-responsive properties of the multiferroic superconducting junction barrier material for the center junctions of each bi-SQUID loop varies by each of the n columns.
20. The device of claim 18 , wherein the electromagnetic-responsive properties of the multiferroic superconducting junction barrier material for the center junctions of each bi-SQUID loop varies by each of the m rows.