Substrate processing apparatus
The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.
1. A substrate processing apparatus comprising:
a process vessel configured to process a substrate;
a process gas supply system configured to supply a process gas into the process vessel;
an inert gas supply system configured to supply an inert gas into the process vessel;
a seal cap configured to close an opening of the process vessel; and
a controller configured to control the process gas supply system and the inert gas supply system,
wherein the inert gas supply system comprises:
a first ejection part installed at a center portion of the seal cap and configured to eject the inert gas;
a second ejection part installed to face an inner wall surface of the opening at an end portion of the process vessel and configured to eject the inert gas;
a first supply pipe configured to supply the inert gas to the first ejection part;
a second supply pipe configured to supply the inert gas to the second ejection part;
a third supply pipe configured to supply the inert gas to the first pipe and the second pipe;
a flow rate controller installed at the third supply pipe and configured to control a flow rate of the inert gas; and
a throttle unit installed at at least one of the first supply pipe and the second supply pipe and configured to throttle a channel where the inert gas flows, and
wherein the controller is configured to control the process gas supply system and the inert gas supply system to: supply the inert gas having the flow rate thereof controlled by the flow rate controller to the first supply pipe and the second supply pipe through the third supply pipe; eject the inert gas supplied to the first supply pipe into the process vessel through the first ejection part installed at the center portion of the seal cap; and eject the inert gas supplied to the second supply pipe to the inner wall surface of the opening at the end portion of the process vessel through the second ejection part while the process gas is supplied into the process vessel.
2. The substrate processing apparatus of claim 1 , wherein the first ejection part comprises a first ejection port formed toward an upper portion of the process vessel, and the second ejection part comprises a plurality of second ejection ports facing the inner wall surface of the opening at the end portion of the process vessel.
3. The substrate processing apparatus of claim 1 , wherein the process vessel comprises: a process tube; and a manifold supporting the process tube, the manifold defining the opening at the end portion of the process vessel.
4. The substrate processing apparatus of claim 1 , further comprising:
a substrate support configured to support the substrate;
a rotational shaft penetrating the seal cap and supporting and rotating the substrate support; and
a rotation mechanism installed at the rotational shaft and configured to rotate the rotational shaft,
wherein the first ejection part comprises a gap between the rotational shaft and the seal cap.
5. The substrate processing apparatus of claim 1 , wherein the second ejection part comprises a hollow ring member including a plurality of second ejection ports.
6. The substrate processing apparatus of claim 5 , wherein the second ejection part is arranged to be concentric with the process vessel.
7. The substrate processing apparatus of claim 6 , wherein the second ejection part is installed at the seal cap.
8. The substrate processing apparatus of claim 7 , wherein the second supply pipe is installed to penetrate the seal cap.
9. The substrate processing apparatus of claim 1 , wherein the throttle unit is installed at the first supply pipe.
10. The substrate processing apparatus of claim 9 , wherein a conductance of the first supply pipe is smaller than that of the second supply pipe.
11. The substrate processing apparatus of claim 1 , further comprising: a cleaning gas supply system configured to supply a cleaning gas into the process vessel,
wherein the controller is configured to control the process gas supply system, the cleaning gas supply system and the inert gas supply system in a manner that a flow rate of the inert gas ejected from the second ejection part when the cleaning gas is supplied into the process vessel is less than that of the inert gas ejected from the second ejection part when the process gas is supplied into the process vessel.
12. The substrate processing apparatus of claim 2 , further comprising:
a process gas inlet port configured to introduce the process gas into the process vessel through the process gas supply system; and
an exhaust port disposed below the process gas inlet port and configured to exhaust an inside of the process vessel,
wherein the process gas inlet port, the exhaust port and the seal cap are arranged in order from top to bottom, and the plurality of second ejection ports are arranged below the exhaust port.
13. The substrate processing apparatus of claim 9 , wherein the controller is configured to control the inert gas supply system in a manner that a flow rate of the inert gas ejected from the first ejection part is less than that of the inert gas ejected from the second ejection part.
14. The substrate processing apparatus of claim 5 , wherein the plurality of second ejection ports are disposed at a position higher than a center line of the hollow ring member.
15. The substrate processing apparatus of claim 14 , wherein the plurality of second ejection ports are disposed at a position closer to the inner wall surface than a vertical line of the hollow ring member.