Ge—Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region
Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.
1. An avalanche photodiode comprising:
a substrate;
a bottom contact layer including a first semiconductor material disposed on the substrate and doped to exhibit a first conductive type;
a multiplication layer including the first semiconductor material disposed on the bottom contact layer, the multiplication layer comprising:
a bottom region doped to exhibit the first conductive type;
an intrinsic region unintentionally doped or lightly doped to function as a multiplication region;
a charge region doped to exhibit a second conductive type and disposed at a center region of a top portion of the multiplication layer above the intrinsic region;
a guard-ring region disposed next to an outer periphery of the charge region of the multiplication layer above the intrinsic region; and
an edge electric field (E-field) buffer region disposed next to an outer periphery of the guard-ring region and unintentionally-doped or lightly-doped to function as a field-ramping region;
a carrier-energy-relaxation layer of the first semiconductor material and disposed on the multiplication layer, the carrier-energy-relaxation layer unintentionally-doped or lightly-doped to function as a buffer to reduce energy of drifting hot carriers;
an absorption layer of a second semiconductor material and disposed on the carrier-energy-relaxation layer;
a top contact layer disposed on the absorption layer and doped to exhibit the second conductive type; and
an anti-reflection layer disposed on the top contact layer,
wherein the first semiconductor material comprises silicon, and
wherein the second semiconductor material comprises germanium.
2. The avalanche photodiode of claim 1 , wherein the substrate comprises a silicon substrate or a silicon-on-insulator (SOI) substrate.
3. The avalanche photodiode of claim 1 , wherein the carrier-energy-relaxation layer comprises a compound of silicon and germanium.
4. The avalanche photodiode of claim 1 , wherein the guard-ring region has a net doping concentration higher than that of the charge region.
5. The avalanche photodiode of claim 1 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer is within the outer periphery of the guard-ring region.
6. The avalanche photodiode of claim 1 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer approximately overlaps an inner periphery of the guard-ring region.
7. The avalanche photodiode of claim 1 , wherein, from a top view, an outer periphery of the charge region of the multiplication layer approximately overlaps the outer periphery of the guard-ring region.
8. The avalanche photodiode of claim 1 , wherein, from a top view, the outer periphery of the guard-ring region of the multiplication layer is beyond an outer periphery of the absorption layer.
9. An avalanche photodiode comprising:
a substrate;
a bottom contact layer including a first semiconductor material and disposed on the substrate, the bottom contact layer doped to exhibit a first conductive type;
a multiplication layer including the first semiconductor material and disposed on the bottom contact layer, the multiplication layer comprising:
a bottom region doped to exhibit the first conductive type;
an intrinsic region unintentionally doped or lightly doped to function as a multiplication region;
a charge region doped to exhibit a second conductive type and disposed at a center region of a top portion of the multiplication layer above the intrinsic region; and
an edge electric field (E-field) buffer region unintentionally-doped or lightly-doped to function as a field-ramping region;
a carrier-energy-relaxation layer of the first type of semiconductor material and disposed on the multiplication layer, the carrier-energy-relaxation layer comprising:
an unintentionally-doped or lightly-doped region configured to function as a buffer to reduce energy of drifting hot carriers; and
a guard-ring region disposed next to an outer periphery of the charge region of the multiplication layer above the intrinsic region, wherein the edge electric field buffer region is disposed next to an outer periphery of the guard-ring region;
an absorption layer of a second semiconductor material and disposed on the carrier-energy-relaxation layer;
a top contact layer disposed on the absorption layer and doped to exhibit the second conductive type; and
an anti-reflection layer disposed on the top contact layer,
wherein the first semiconductor material comprises silicon, and
wherein the second semiconductor material comprises germanium.
10. The avalanche photodiode of claim 9 , wherein the substrate comprises a silicon substrate or a silicon-on-insulator (SOI) substrate.
11. The avalanche photodiode of claim 9 , wherein the carrier-energy-relaxation layer comprises a compound of silicon and germanium.
12. The avalanche photodiode of claim 9 , wherein the guard-ring region has a net doping concentration higher than that of the charge region.
13. The avalanche photodiode of claim 9 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer is within the outer periphery of the guard-ring region.
14. The avalanche photodiode of claim 9 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer approximately overlaps an inner periphery of the guard-ring region.
15. The avalanche photodiode of claim 9 , wherein, from a top view, an outer periphery of the charge region of the multiplication layer approximately overlaps the outer periphery of the guard-ring region.
16. The avalanche photodiode of claim 9 , wherein, from a top view, the outer periphery of the guard-ring region of the multiplication layer is beyond an outer periphery of the absorption layer.
17. An avalanche photodiode comprising:
a substrate;
a bottom contact layer including a first semiconductor material and disposed on the substrate, the bottom contact layer doped to exhibit a first conductive type;
a multiplication layer including a first semiconductor material and disposed on the bottom contact layer, the multiplication layer comprising:
a bottom region doped to exhibit a first conductive type;
an intrinsic region unintentionally doped or lightly doped to function as a multiplication region;
a charge region doped to exhibit a second conductive type and disposed at a center region of a top portion of the multiplication layer above the intrinsic region; and
a guard-ring region disposed next to an outer periphery of the charge region of the multiplication layer and above the intrinsic region;
a carrier-energy-relaxation layer of the first semiconductor material and disposed on the multiplication layer, the carrier-energy-relaxation layer unintentionally doped or lightly doped to function as a buffer to reduce energy of drifting hot carriers;
an absorption layer of a second semiconductor material and disposed on the carrier-energy-relaxation layer;
a top contact layer disposed on the absorption layer and doped to exhibit a second conductive type; and
an anti-reflection layer disposed on the top contact layer,
wherein the first semiconductor material comprises silicon, and
wherein the second semiconductor material comprises germanium.
18. The avalanche photodiode of claim 17 , wherein the substrate comprises a silicon substrate or a silicon-on-insulator (SOI) substrate.
19. The avalanche photodiode of claim 17 , wherein the carrier-energy-relaxation layer comprises a compound of silicon and germanium.
20. The avalanche photodiode of claim 17 , wherein the guard-ring region has a net doping concentration higher than that of the charge region.
21. The avalanche photodiode of claim 17 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer is within the outer periphery of the guard-ring region.
22. The avalanche photodiode of claim 17 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer approximately overlaps an inner periphery of the guard-ring region.
23. The avalanche photodiode of claim 17 , wherein, from a top view, the outer periphery of the charge region of the multiplication layer approximately overlaps the outer periphery of the guard-ring region.
24. The avalanche photodiode of claim 17 , wherein, from a top view, the outer periphery of the guard-ring region of the multiplication layer is beyond an outer periphery of absorption layer.
25. An avalanche photodiode comprising:
a substrate;
a bottom contact layer including a first semiconductor material and disposed on the substrate, the bottom contact layer doped to exhibit a first conductive type;
a multiplication layer including the first semiconductor material and disposed on the bottom contact layer, the multiplication layer comprising:
a bottom region doped to exhibit the first conductive type;
an intrinsic region unintentionally doped or lightly doped to function as a multiplication region; and
a charge region doped to exhibit a second conductive type and disposed at a center region of a top portion of the multiplication layer above the intrinsic region;
a carrier-energy-relaxation layer of the first semiconductor material and disposed on the multiplication layer, the carrier-energy-relaxation layer comprising:
an unintentionally-doped or lightly-doped region which functions as a buffer to reduce energy of drifting hot carriers; and
a guard-ring region disposed next to an outer periphery of the charge region of the multiplication layer above the intrinsic region;
an absorption layer of a second semiconductor material and disposed on the carrier-energy-relaxation layer;
a top contact layer disposed on the absorption layer and doped to exhibit a second conductive type; and
an anti-reflection layer disposed on the top contact layer,
wherein the first semiconductor material comprises silicon, and
wherein the second semiconductor material comprises germanium.
26. The avalanche photodiode of claim 25 , wherein the substrate comprises a silicon substrate or silicon-on-insulator (SOI) substrate.
27. The avalanche photodiode of claim 25 , wherein the carrier-energy-relaxation layer comprises a compound of silicon and germanium.
28. The avalanche photodiode of claim 25 , wherein the guard-ring region has a net doping concentration higher than that of the charge region.
29. The avalanche photodiode of claim 25 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer is within the outer periphery of the guard-ring region.
30. The avalanche photodiode of claim 25 , wherein, from a top view, an outer periphery of the bottom region of the multiplication layer approximately overlaps an inner periphery of the guard-ring region.
31. The avalanche photodiode of claim 25 , wherein, from a top view, the outer periphery of the charge region of the multiplication layer approximately overlaps the outer periphery of the guard-ring region.
32. The avalanche photodiode of claim 25 , wherein, from a top view, the outer periphery of the guard-ring region of the multiplication layer is beyond an outer periphery of absorption layer.