Semiconductor device having through-electrode
A semiconductor device according to the present invention includes a semiconductor substrate, a surface electrode provided on a front surface of the semiconductor substrate through an insulating film, a via, passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, having a wall including a flange portion inwardly projecting on a front surface portion of the semiconductor substrate, a via insulating film formed on the wall of the via, and a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, while the via insulating film has portions having different thickness compensating for a step between the flange portion and the remaining portion of the wall, to planarize a contact surface with the through-electrode.
1. A semiconductor device, comprising:
a semiconductor substrate comprised of a semiconductor material;
a surface electrode provided on a front surface of the semiconductor substrate through an insulating film;
a via passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, the via having a wall including a flange portion inwardly projecting on a front surface portion of the semiconductor substrate, the flange portion being formed from the semiconductor substrate and comprising the semiconductor material;
a via insulating film formed on the wall of the via; and
a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, wherein
the via insulating film has portions having different thickness thereof compensating for a step between the flange portion and a remaining portion of the wall, to planarize a contact surface with the through-electrode, and
a thickness of the via insulating film around the flange portion of the via being thinner than a thickness of the via insulating film on the remaining portion of the wall.
2. The semiconductor device according to claim 1 , wherein
the via insulating film includes a body portion covering the wall of the via and a rear surface portion covering the rear surface of the semiconductor substrate, and
the body portion and the rear surface portion are continuous with each other to follow an opening shape of the via.
3. The semiconductor device according to claim 1 , wherein
an inner diameter of the flange portion of the via is smaller than a diameter of the surface electrode, and an inner diameter of the remaining portion of the wall is greater than the diameter of the surface electrode.
4. The semiconductor device according to claim 3 , wherein
the inner diameter of the flange portion of the via is 3 μm to 9 μm, and the inner diameter of the remaining portion of the wall is 5 μm to 10 μm.
5. The semiconductor device according to claim 1 , wherein
the via insulating film is a single-layer film of silicon oxide.
6. The semiconductor device according to claim 1 , wherein
the via insulating film is a multilayer film including a first silicon oxide film and a second silicon oxide film successively stacked from a side closer to the wall,
the first silicon oxide film is formed on a portion of the wall excluding the flange portion, and has the same thickness as the step, and
the second silicon oxide film is formed to cover the first silicon oxide film and the flange portion.
7. The semiconductor device according to claim 1 , wherein
the via insulating film is a multilayer film including a silicon oxide film and a silicon nitride film successively stacked from a side closer to the wall,
the silicon oxide film is formed on the wall excluding the flange portion, and has the same thickness as the step, and
the silicon nitride film is formed to cover the silicon oxide film and the flange portion.
8. The semiconductor device according to claim 7 , further comprising a barrier film arranged between the via insulating film and the through-electrode.
9. The semiconductor device according to claim 8 , wherein
the barrier film is a tantalum film.
10. The semiconductor device according to claim 1 , wherein said surface electrode comprises a plurality of surface electrodes, further comprising a wire set between the plurality of surface electrodes adjacent to each other.
11. The semiconductor device according to claim 1 , wherein
the surface electrode includes a multilayer electrode stacked through an interlayer dielectric film.
12. The semiconductor device according to claim 1 , further comprising a front surface bump for external connection arranged on a position immediately above the through-electrode so that the surface electrode is placed between the front surface bump and the through-electrode.
13. The semiconductor device according to claim 1 , further comprising a rear surface bump for external connection arranged on an end portion of the through-electrode closer to the rear surface of the semiconductor substrate.
14. The semiconductor device according to claim 1 , wherein
the through-electrode is provided in a form of a column.
15. The semiconductor device according to claim 1 , wherein
the front surface of the semiconductor substrate includes an element forming surface provided with a plurality of semiconductor elements.
16. An electronic component, comprising:
a first semiconductor device including:
a semiconductor substrate comprised of a semiconductor material;
a surface electrode provided on a front surface of the semiconductor substrate through an insulating film;
a via passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, the via having a wall including a flange portion inwardly projecting on a front surface portion of the semiconductor substrate, the flange portion being formed from the semiconductor substrate and comprising the semiconductor material;
a via insulating film formed on the wall of the via; and
a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, wherein
the via insulating film has portions having different thickness thereof compensating for a step between the flange portion and a remaining portion of the wall, to planarize a contact surface with the through-electrode, and a thickness of the via insulating film around the flange portion of the via being thinner than a thickness of the via insulating film on the remaining portion of the wall;
an interposer having a plurality of external terminals on a rear surface thereof, wherein
the first semiconductor device is stacked above such that a rear surface thereof is facing to a front surface of the interposer;
a second semiconductor device, having a rear surface bump, stacked on a front surface of the first semiconductor device so that the rear surface bump of the second semiconductor device is electrically connected to the through-electrode of the first semiconductor device; and
a resin package sealing the first semiconductor device and the second semiconductor device.
17. A semiconductor device, comprising:
a semiconductor substrate comprised of a semiconductor material;
a surface electrode provided on a front surface of the semiconductor substrate through an insulating film;
a via passing through the semiconductor substrate from a rear surface thereof up to the front surface to reach the surface electrode, the via having a wall including a flange portion inwardly projecting into a space defined by the via on a front surface portion of the semiconductor substrate, the flange portion being formed from the semiconductor substrate and comprising the semiconductor material;
a via insulating film formed on the wall of the via; and
a through-electrode embedded inside the via insulating film and electrically connected to the surface electrode, wherein
the via insulating film has portions having different thickness thereof compensating for a step between the flange portion and a remaining portion of the wall, to planarize a contact surface with the through-electrode.