IP Library Granted Patent US 9,437,832
Granted Patent B2
US 9,437,832 · App. 14/621,914 · Granted Sep 6, 2016

Light-emitting device and peeling method

Inventors: Tatsuya Sakuishi (Kanagawa, JP); Yutaka Uchida (Kanagawa, JP); Hiroki Adachi (Tochigi, JP); Saki Eguchi (Tochigi, JP); Junpei Yanaka (Tochigi, JP); Kayo Kumakura (Tochigi, JP); Seiji Yasumoto (Tochigi, JP); Kohei Yokoyama (Kanagawa, JP); Akihiro Chida (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/0097B32B7/02B32B7/12B32B15/08B32B15/18B32B15/20B32B17/00B32B27/20B32B27/286B32B27/30B32B27/325B32B27/34B32B27/36B32B27/365B32B38/10H01L51/003B32B37/02B32B37/1292B32B37/18B32B2250/05B32B2255/20B32B2260/021B32B2260/046B32B2264/102B32B2307/202B32B2307/40B32B2307/50B32B2307/536B32B2307/558B32B2310/0843B32B2315/08B32B2457/20H01L51/5253H01L2251/5338Y02E10/549
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Quick Facts
Patent No.
US 9,437,832
App. No.
14/621,914
Granted
Sep 6, 2016
Kind
B2
Abstract

A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Claims (118)

1. A light-emitting device comprising:

a first substrate having flexibility;

a second substrate having flexibility;

an element layer between the first substrate and the second substrate;

an insulating layer between the first substrate and the element layer;

a first bonding layer between the first substrate and the insulating layer;

a second bonding layer between the second substrate and the element layer,

wherein the element layer comprises a light-emitting element,

wherein the first bonding layer comprises a first portion whose hardness is higher than Shore D of 70,

wherein the second bonding layer comprises a second portion whose hardness is higher than Shore D of 70,

wherein the first substrate comprises a third portion whose coefficient of expansion is less than 58 ppm/° C., and

wherein the second substrate comprises a fourth portion whose coefficient of expansion is less than 58 ppm/° C.

2. The light-emitting device according to claim 1 ,

wherein the hardness of the first portion is higher than or equal to Shore D of 80, and

wherein the hardness of the second portion is higher than or equal to Shore D of 80.

3. The light-emitting device according to claim 1 ,

wherein the coefficient of expansion of the third portion is less than or equal to 30 ppm/° C., and

wherein the coefficient of expansion of the fourth portion is less than or equal to 30 ppm/° C.

4. The light-emitting device according to claim 1 , wherein the insulating layer comprises:

a first silicon oxynitride film;

a silicon nitride film over the first silicon oxynitride film;

a second silicon oxynitride film over the silicon nitride film;

a silicon nitride oxide film over the second silicon oxynitride film; and

a third silicon oxynitride film over the silicon nitride oxide film.

5. A light-emitting device comprising:

a first substrate having flexibility;

a second substrate having flexibility;

an element layer between the first substrate and the second substrate;

an insulating layer between the first substrate and the element layer;

a first bonding layer between the first substrate and the insulating layer;

a second bonding layer between the second substrate and the element layer,

wherein the element layer comprises a light-emitting element,

wherein the first bonding layer comprises a first portion whose hardness is higher than or equal to Shore D of 80,

wherein the second bonding layer comprises a second portion whose hardness is higher than or equal to Shore D of 80,

wherein the first substrate comprises a third portion whose coefficient of expansion is less than or equal to 27 ppm/° C., and

wherein the second substrate comprises a fourth portion whose coefficient of expansion is less than or equal to 27 ppm/° C.

6. The light-emitting device according to claim 5 , wherein the insulating layer comprises:

a first silicon oxynitride film;

a silicon nitride film over the first silicon oxynitride film;

a second silicon oxynitride film over the silicon nitride film;

a silicon nitride oxide film over the second silicon oxynitride film; and

a third silicon oxynitride film over the silicon nitride oxide film.

7. A light-emitting device comprising:

a first substrate having flexibility;

a second substrate having flexibility;

an element layer between the first substrate and the second substrate;

an insulating layer between the first substrate and the element layer;

a first bonding layer between the first substrate and the insulating layer;

a second bonding layer between the second substrate and the element layer,

wherein the element layer comprises a light-emitting element,

wherein the first bonding layer comprises a first portion whose hardness is higher than Shore D of 70,

wherein the second bonding layer comprises a second portion whose hardness is higher than Shore D of 70,

wherein the first substrate comprises a third portion whose coefficient of expansion is less than 58 ppm/° C.,

wherein the second substrate comprises a fourth portion whose coefficient of expansion is less than 58 ppm/° C., and

wherein a display portion comprising the light-emitting element is a curved display portion.

8. The light-emitting device according to claim 7 , wherein a display surface of the display portion is bent.

9. The light-emitting device according to claim 7 ,

wherein a housing of the light-emitting device comprises a front surface and a side surface, and

wherein the display portion comprises a region corresponding to the front surface and a region corresponding to the side surface.

10. The light-emitting device according to claim 7 ,

wherein a housing of the light-emitting device comprises a front surface, a shorter side surface, and a longer side surface, and

wherein the display portion comprises a region corresponding to the front surface, a region corresponding to the shorter side surface, and a region corresponding to the longer side surface.

11. A portable information terminal comprising the light-emitting device according to claim 7 .

12. A light-emitting device comprising:

a first substrate having flexibility;

a second substrate having flexibility;

an element layer between the first substrate and the second substrate;

an insulating layer between the first substrate and the element layer;

a first bonding layer between the first substrate and the insulating layer;

a second bonding layer between the second substrate and the element layer,

wherein the element layer comprises a light-emitting element,

wherein the first bonding layer comprises a first portion whose hardness is higher than Shore D of 70,

wherein the second bonding layer comprises a second portion whose hardness is higher than Shore D of 70,

wherein the first substrate comprises a third portion whose coefficient of expansion is less than 58 ppm/° C.,

wherein the second substrate comprises a fourth portion whose coefficient of expansion is less than 58 ppm/° C., and

wherein the light-emitting device is a foldable light-emitting device.

13. The light-emitting device according to claim 12 , wherein the light-emitting device is foldable so that a first region of a display surface of the light-emitting device and a second region of the display surface face each other.

14. The light-emitting device according to claim 12 , wherein the light-emitting device is foldable so that a first region of a display surface of the light-emitting device and a second region of the display surface do not face each other.

15. The light-emitting device according to claim 12 , wherein the light-emitting device is foldable so that a first region of a display surface of the light-emitting device and a second region of the display surface face each other and the second region of the display surface and a third region of the display surface do not face each other.

16. A portable information terminal comprising the light-emitting device according to claim 12 .

17. A light-emitting device comprising:

a first substrate having flexibility;

a second substrate having flexibility;

an element layer between the first substrate and the second substrate;

an insulating layer between the first substrate and the element layer;

a first bonding layer between the first substrate and the insulating layer;

a second bonding layer between the second substrate and the element layer,

wherein the element layer comprises a light-emitting element,

wherein the first bonding layer comprises a first portion whose hardness is higher than or equal to Shore D of 80,

wherein the second bonding layer comprises a second portion whose hardness is higher than or equal to Shore D of 80,

wherein the first substrate comprises a third portion whose coefficient of expansion is less than or equal to 27 ppm/° C.,

wherein the second substrate comprises a fourth portion whose coefficient of expansion is less than or equal to 27 ppm/° C., and

wherein a display portion comprising the light-emitting element is a curved display portion.

18. The light-emitting device according to claim 17 , wherein a display surface of the display portion is bent.

19. The light-emitting device according to claim 17 ,

wherein a housing of the light-emitting device comprises a front surface and a side surface, and

wherein the display portion comprises a region corresponding to the front surface and a region corresponding to the side surface.

20. The light-emitting device according to claim 17 ,

wherein a housing of the light-emitting device comprises a front surface, a shorter side surface, and a longer side surface, and

wherein the display portion comprises a region corresponding to the front surface, a region corresponding to the shorter side surface, and a region corresponding to the longer side surface.

21. A portable information terminal comprising the light-emitting device according to claim 17 .

22. A light-emitting device comprising:

a first substrate having flexibility;

a second substrate having flexibility;

an element layer between the first substrate and the second substrate;

an insulating layer between the first substrate and the element layer;

a first bonding layer between the first substrate and the insulating layer;

a second bonding layer between the second substrate and the element layer,

wherein the element layer comprises a light-emitting element,

wherein the first bonding layer comprises a first portion whose hardness is higher than or equal to Shore D of 80,

wherein the second bonding layer comprises a second portion whose hardness is higher than or equal to Shore D of 80,

wherein the first substrate comprises a third portion whose coefficient of expansion is less than or equal to 27 ppm/° C.,

wherein the second substrate comprises a fourth portion whose coefficient of expansion is less than or equal to 27 ppm/° C., and

wherein the light-emitting device is a foldable light-emitting device.

23. The light-emitting device according to claim 22 , wherein the light-emitting device is foldable so that a first region of a display surface of the light-emitting device and a second region of the display surface face each other.

24. The light-emitting device according to claim 22 , wherein the light-emitting device is foldable so that a first region of a display surface of the light-emitting device and a second region of the display surface do not face each other.

25. The light-emitting device according to claim 22 , wherein the light-emitting device is foldable so that a first region of a display surface of the light-emitting device and a second region of the display surface face each other and the second region of the display surface and a third region of the display surface do not face each other.

26. A portable information terminal comprising the light-emitting device according to claim 22 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2015
From: SAKUISHI, TATSUYA; UCHIDA, YUTAKA; ADACHI, HIROKI; EGUCHI, SAKI; YANAKA, JUNPEI; KUMAKURA, KAYO; YASUMOTO, SEIJI; YOKOYAMA, KOHEI; CHIDA, AKIHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 035236/0841 →
Priority Claims (1)
JP 2014-029756 · Feb 19, 2014 · national
Continuity (1)
Related Publication 20150236280A1 · Aug 20, 2015