Buffer circuit for compensating for a mismatch between on-die termination resistors and semiconductor device including the same, and operating method thereof

1. A semiconductor device comprising:

a driver circuit configured to provide a termination resistor at a signal transmission path, wherein the driver circuit comprises a plurality of resistors including at least two different types of resistors in terms of resistance change characteristics, wherein the at least different types of resistors include first-type resistors having a first type of resistance change characteristics and a second-type resistors having a second type of resistance change characteristics different from the first type of resistance change characteristics;

a dummy circuit configured to compensate for a mismatch in the resistance change characteristics between the at least two different types of resistors by selectively connecting a dummy resistor of the dummy circuit to the signal transmission path according to a dummy selection signal; and

a control unit configured to generate the dummy selection signal,

wherein the control unit comprises:

a resistance change detecting circuit configured to detect the mismatch by detecting resistance changes in the at least two different types of resistors; and

a dummy circuit selecting unit configured to output the dummy selection signal for selecting the dummy resistor of the dummy circuit according to the detection result of the resistance changes in the at least two different types of resistors.

2. The semiconductor device of claim 1 , wherein the driver circuit further comprises a plurality of switching units that selectively connects the plurality of resistors to the signal transmission path according to a control code.

3. The semiconductor device of claim 1 , wherein the first- and second-type resistors are implemented by different processes from each other.

4. The semiconductor device of claim 1 , wherein the first-type resistor is one of a well resistor, a poly resistor, or a metal resistor, and

the second-type resistor is the other one of the well resistor, the poly resistor, or the metal resistor.

5. The semiconductor device of claim 1 , wherein the dummy resistor has a resistance value corresponding to a largest resistance value among resistance values of the plurality of resistors of the driver circuit.

6. The semiconductor device of claim 1 , wherein the resistance change detecting circuit comprises:

one or more first resistors having the first type of resistance change characteristics;

one or more second resistors having the second type of resistance change characteristics; and

one or more comparators configured to compare a first resistance value based on the first resistors and a second resistance value based on the second resistors.

7. The semiconductor device of claim 1 , wherein the dummy circuit selecting unit comprises:

a first operator configured to receive the detection result and a control code; and

a second operator configured to receive a logic operation result of the first operator to output the dummy selection signal.

8. The semiconductor device of claim 7 , wherein the dummy circuit selecting unit is configured to activate the dummy selection signal when the control code has a predetermined value and an amount of the mismatch is equal to or greater than a reference value.

9. The semiconductor device of claim 7 , wherein the dummy circuit selecting unit is configured to activate the dummy selection signal when a connection between the first-type resistors in the driver circuit and the signal transmission path is cut off and the second-type resistors in the driver circuit are connected to the signal transmission path, according to the control code.

10. A buffer circuit comprising:

a driver circuit including a plurality of resistors, wherein the driver circuit connects first resistors of the plurality of resistors to a signal transmission path according to a control code, and the plurality of resistors includes at least two different types of resistors in terms of resistance change characteristics;

a dummy circuit including a dummy resistor selectively connected to the signal transmission path, according to a dummy selection signal, to compensate for a mismatch in the resistance change characteristics between the at least two different types of resistors,

wherein the dummy resistor of the dummy circuit has the same type of resistance change characteristics as one of the at least two different types of resistors;

a control unit comprising:

a resistance change detecting circuit configured to detect the mismatch by detecting resistance changes in the at least two different types of resistors; and

a dummy circuit selecting unit configured to output the dummy selection signal for selecting the dummy resistor of the dummy circuit according to the detection result of the resistance changes in the at least two different types of resistors.

11. The buffer circuit of claim 10 , wherein the at least two different types of resistors are implemented by different processes from each other.

12. The buffer circuit of claim 10 , wherein the dummy resistor has a resistance value corresponding to a largest resistance value among resistance values of the plurality of resistors.

13. The buffer circuit of claim 10 , wherein the dummy resistor is connected to the signal transmission path when the control code has a predetermined value and an amount of the mismatch is equal to or greater than a reference value.

14. The buffer circuit of claim 10 , wherein the plurality of resistors are on-die termination (ODT) resistors.

15. A method for operating a semiconductor device, wherein the semiconductor device includes a buffer circuit having a driver circuit and a dummy circuit, and the driver circuit includes a plurality of resistors having at least two different types of resistors in terms of resistance change characteristics, comprising:

generating a control code for selecting one or more resistors among the plurality of resistors to be connected to a signal transmission path;

receiving the control code and a detection signal corresponding to a match in the resistance change characteristics between the at least two different types of resistors;

generating a dummy selection signal based on the received control code;

selectively connecting a dummy resistor of the dummy circuit to the signal transmission path based on the dummy selection signal;

detecting a mismatch by detecting resistance changes in the at least two different types of resistors; and

outputting the dummy selection signal for selecting the dummy resistor of the dummy circuit according to the detection result of the resistance changes in the at least two different types of resistors,

wherein the at least two different types of resistors includes first-type resistors having a first type of resistance change characteristics and second-type resistors having a second type of resistance change characteristics different from the first type of resistance change characteristics.

16. The method of claim 15 , wherein the dummy selection signal is activated when the control code has a predetermined value and an amount of the mismatch is equal to or greater than a reference value.

17. The method of claim 15 , wherein the dummy selection signal is activated when a connection between the first-type resistors and the signal transmission path is cut off and the second-type resistors are connected to the signal transmission path, according to the control code.

18. The method of claim 15 , wherein the dummy resistor has a resistance value corresponding to a largest resistance value among resistance values of the plurality of resistors of the driver circuit.