Semiconductor arrangements and methods of manufacturing the same
Semiconductor arrangements and methods for manufacturing the same. The arrangement may include: a substrate; a back gate formed on the substrate; at least one pair of nanowires disposed on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective nanowires.
1. A semiconductor arrangement, comprising:
a substrate;
a back gate formed on the substrate;
at least one pair of nanowires disposed on the back gate, each pair of the at least one pair of nanowires including two nanowires, a first nanowire of the two nanowires extending in a first direction on a first side of the back gate, a second nanowire of the two nanowires extending in the first direction on a second side of the back gate, the second side of the back gate being opposite the first side of the back gate;
back gate dielectric layers interposed between the back gate and the respective nanowires; and
a gate stack extending in a second direction crossing the first direction to intersect the nanowires.
2. The semiconductor arrangement according to claim 1 , wherein the nanowires each comprise Si, Ge, SiGe, GaAs, GaSb, AlAs, InAs, InP, GaN, SiC, InGaAs, InSb, or InGaSb, and has a height of about 3-15 nm and a width of about 3-28 nm.
3. The semiconductor arrangement according to claim 1 , wherein the nanowires are configured not to extend beyond the back gate in a height direction of the back gate.
4. The semiconductor arrangement according to claim 1 , wherein the back gate comprises at least one of doped polysilicon, TiN, or W, with a width of about 5-30 nm.
5. The semiconductor arrangement according to claim 1 , wherein the gate dielectric layers each comprise oxide, with an equivalent oxide thickness of about 2-30 nm.
6. The semiconductor arrangement according to claim 1 , further comprising:
an isolation layer formed on the substrate and exposing the respective nanowires, wherein
the gate stack is formed on the isolation layer and also intersects the back gate, wherein the gate stack is isolated from the back gate by a dielectric layer.
7. The semiconductor arrangement according to claim 6 , wherein the gate stack comprises a gate dielectric layer and a gate conductor layer formed on the gate dielectric layer, wherein the gate conductor layer extends on side surfaces of the respective nanowires opposite to the back gate.
8. The semiconductor arrangement according to claim 7 , wherein the gate conductor layer further extends onto surfaces of the respective nanowires in a height direction of the back gate.
9. The semiconductor arrangement according to claim 6 , further comprising a semiconductor layer grown on surfaces of portions of each of the nanowires on opposite sides of the gate stack.
10. The semiconductor arrangement according to claim 9 , wherein the semiconductor layer is compressively stressed if the semiconductor arrangement is used for a p-type device, or is tensilely stressed if the semiconductor arrangement is used for an n-type device.
11. The semiconductor arrangement according to claim 1 , further comprising a well region in the substrate, wherein the back gate is in electrical contact with the well region.
12. The semiconductor arrangement according to claim 1 , further comprising a source region and a drain region respectively formed on opposite ends of each of the nanowires in the first direction.