Image sensor and method of fabricating the same
An image sensor includes a substrate, a shallow trench isolation layer, a first deep trench isolation layer, and a second deep trench isolation layer. The substrate includes a first surface, a second surface opposing the first surface, and a plurality of unit pixel regions. The shallow trench isolation layer is adjacent to the first surface. The first deep trench isolation layer is adjacent to the shallow trench isolation layer and extends toward the second surface in the substrate. The second deep trench isolation layer is adjacent to the second surface and vertically overlaps the first deep trench isolation layer. The first and second deep trench isolation layers isolate the unit pixel regions from each other.
1. An image sensor, comprising:
a substrate including a first surface, a second surface opposing the first surface, and a plurality of unit pixel regions;
a shallow trench isolation layer adjacent to the first surface;
a first deep trench isolation layer adjacent to the shallow trench isolation layer and extending toward the second surface in the substrate; and
a second deep trench isolation layer adjacent to the second surface and vertically overlapping the first deep trench isolation layer, wherein the first and second deep trench isolation layers isolate the unit pixel regions from each other.
2. The image sensor as claimed in claim 1 , wherein the first deep trench isolation layer is in contact with the second deep trench isolation layer.
3. The image sensor as claimed in claim 1 , wherein the first deep trench isolation layer includes:
a filling insulation layer; and
a poly-silicon pattern in the filling insulation layer.
4. The image sensor as claimed in claim 1 , further comprising:
a dopant injection region in the substrate and along sidewalls of the first and second deep trench isolation layers.
5. The image sensor as claimed in claim 1 , wherein the second deep trench isolation layer includes:
a fixed charge layer; and
a filling insulation layer in the fixed charge layer.
6. The image sensor as claimed in claim 5 , wherein the fixed charge layer overlaps the second surface.
7. The image sensor as claimed in claim 1 , wherein a sidewall of the second deep trench isolation layer is horizontally spaced apart from a sidewall of the first deep trench isolation layer.
8. The image sensor as claimed in claim 1 , wherein
the first deep trench isolation layer is vertically spaced apart from the second deep trench isolation layer, and
the image sensor includes a channel stop region between the first deep trench isolation layer and the second deep trench isolation layer.
9. The image sensor as claimed in claim 1 , wherein at least one of the first or second deep trench isolation layers includes an air gap region.
10. The image sensor as claimed in claim 1 , wherein the first and second deep trench isolation layers surrounds each of the unit pixel regions when viewed from a plan view.
11. The image sensor as claimed in claim 1 , wherein a width of the first deep trench isolation layer is different from a width of the second deep trench isolation layer.
12. The image sensor as claimed in claim 1 , wherein a vertical length of the first deep trench isolation layer is different from a vertical length of the second deep trench isolation layer.
13. An image sensor, comprising:
a substrate including a first surface, a second surface opposing the first surface, and a plurality of unit pixel regions;
a first deep trench isolation layer adjacent to the first surface; and extending toward the second surface in the substrate; and
a second deep trench isolation layer adjacent to the second surface, wherein the second deep trench isolation layer overlaps the first deep trench isolation layer when viewed from a plan view and wherein the first and second deep trench isolation layers isolate the unit pixel regions from each other.
14. The image sensor as claimed in claim 13 , wherein the first deep trench isolation layer has substantially a T-shaped cross section.
15. An image sensor, comprising:
a first pixel region;
a second pixel region;
a fixed charge layer over the first and second pixel regions;
a first isolation layer between the first and second pixel regions; and
a second isolation layer between the first and second pixel regions, wherein the second isolation layer overlaps the first isolation layer and wherein the first and second isolation layers isolate the first pixel region from the second pixel region.
16. The image sensor as claimed in claim 15 , wherein the fixed charge layer includes a material to induce accumulation of holes adjacent a surface of each of the first and second pixel regions.
17. The image sensor as claimed in claim 15 , further comprising:
a poly-silicon pattern in the second isolation layer,
wherein the poly-silicon pattern has a first thermal expansion coefficient, the first and second pixel regions are in or on a layer having a second thermal expansion coefficient, and the first thermal expansion coefficient is substantially equal to the second thermal expansion coefficient.
18. The image sensor as claimed in claim 15 , wherein the second isolation layer includes at least one of an oxygen permeation preventing layer or a filling insulation layer.
19. The image sensor as claimed in claim 15 , wherein the second isolation layer includes:
a first layer; and
a second layer on the first layer,
wherein the first layer is closer to the first isolation layer than the second layer, and wherein the second layer is closer to a surface to receive incident light than the first layer.
20. The image sensor as claimed in claim 19 , wherein:
the first layer includes one or more materials, and
the second layer includes one or more materials different from the one or more materials of the first layer.