Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
1. A photomultiplier tube comprising:
a semiconductor photocathode; and
a photodiode including:
a p-doped semiconductor layer;
a n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode; and
a pure boron layer formed on a second surface of the p-doped semiconductor layer,
wherein the semiconductor photocathode comprises silicon, and
wherein the semiconductor photocathode further comprises a pure boron coating on at least one surface.
2. The photomultiplier tube of claim 1 wherein the semiconductor photocathode comprises gallium nitride.
3. The photomultiplier tube of claim 2 , wherein the semiconductor photocathode further comprises one or more p-doped gallium nitride layers.
4. The photomultiplier tube of claim 1 , wherein a gap between the semiconductor photocathode and the photodiode is less than about 1 mm.
5. The photomultiplier tube of claim 4 wherein a gap between the semiconductor photocathode and the photodiode is less than about 500 μm.
6. The photomultiplier tube of claim 1 , wherein said silicon of said semiconductor photocathode comprises opposing surfaces, and semiconductor photocathode comprises first and second pure boron coatings respectively disposed on the opposing surfaces.
7. The photomultiplier tube of claim 1 , wherein said semiconductor photocathode further comprises an anti-reflection layer disposed over a light receiving surface of the silicon.
8. The photomultiplier tube of claim 7 , wherein the anti-reflection layer is disposed on the pure boron coating and comprises one of MgF 2 , SiO 2 , Al 2 O 3 and HfO 2 .
9. The photomultiplier tube of claim 1 , wherein said semiconductor photocathode further comprises an activation layer disposed over an electron emitting surface of the silicon.
10. The photomultiplier tube of claim 9 , wherein the activation layer is disposed on the pure boron coating and comprises Cs (cesium).