Organic light-emitting display device and method of manufacturing the same
An organic light-emitting display (OLED) device is provided. The OLED device includes: a substrate of which a pixel region is defined; a light-condensing means disposed on the pixel region of the substrate; a lower electrode disposed on the light-condensing means; an organic layer, which is disposed on the lower electrode and includes an organic light-emitting layer; and an upper electrode disposed on the organic layer. A method for manufacturing such an OLED device is also provided.
1. An organic light-emitting display (OLED) device comprising:
a substrate of which a pixel region and a circuit region are defined;
a buffer layer including a light-condensing means on the pixel region of the substrate and a first buffer film pattern on the circuit region of the substrate;
an active layer on the first buffer film pattern;
a gate insulation film on the light-condensing means and the active layer;
a gate electrode on the active layer;
a lower electrode on the light-condensing means;
an organic layer, on the lower electrode; and
an upper electrode on the organic layer, wherein
the light-condensing means and the first buffer film pattern are formed of the same material and are disposed on the same plane, and
the gate insulation film is interposed between the light-condensing means and the lower electrode in the pixel region and between the active layer and the gate electrode in the circuit region.
2. The OLED device of claim 1 , wherein the organic layer comprises an organic light-emitting layer.
3. The OLED device of claim 1 , further comprises a thin-film transistor array on the circuit region of the substrate, wherein
the thin-film transistor array comprises:
the active layer including a channel region; and
the gate electrode on the channel region of the active layer.
4. The OLED device of claim 1 , wherein the first buffer film pattern is physically separated from the light-condensing means.
5. The OLED device of claim 1 , the substrate comprising a storage region distinguished from the pixel region, and
the OLED device further comprises:
a first capacitor electrode disposed in the storage region; and
a second capacitor electrode disposed on the first capacitor electrode,
the gate insulation film being interposed between the first capacitor electrode and the second capacitor electrode in the storage region.
6. The OLED device of claim 5 , further comprising a second buffer film pattern, which is interposed between the substrate and the first capacitor electrode and is disposed on the same plane with but is physically separated from the light-condensing means.
7. The OLED device of claim 5 , further comprising a third capacitor electrode disposed on the second capacitor electrode,
the first capacitor electrode and the second capacitor electrode forming a first capacitor,
the second capacitor electrode and the third capacitor electrode forming a second capacitor, and
the second capacitor electrode being a common electrode of the first capacitor and the second capacitor.
8. The OLED device of claim 1 , the light-condensing means being formed directly on the substrate.
9. The OLED device of claim 1 , the light-condensing means having a cross-sectional shape of a convex lens of which a center part is thicker than an edge part.
10. The OLED device of claim 9 , a refractive index of a material of the light-condensing means being greater than that of the organic layer.
11. The OLED device of claim 1 , the light-condensing means having a cross-sectional shape of a concave lens of which an edge part is thicker than a center part.
12. The OLED device of claim 11 , a refractive index of a material of the light-condensing means being less than that of the organic layer.
13. The OLED device of claim 1 , the light-condensing means being formed using a half-tone mask.
14. The OLED device of claim 1 , the substrate being substantially planar, the light emitted by the organic layer being converged on a focal point by the light-condensing means.