Semiconductor laser device
A semiconductor laser device includes: semiconductor laser arrays; collimating members; a condenser lens provided, in common, for collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern including light incident regions is formed through entering of the collimated light beam arrays; and an optical fiber. A condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from that of any other one of the semiconductor laser arrays. A collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface. The predetermined light incident region is other than the outermost light incident region in the light incident row pattern.
1. A semiconductor laser device, comprising:
a plurality of semiconductor laser arrays each including a plurality of linearly-disposed light emitting elements;
collimating members each disposed in an optical path of a light beam array emitted from each of the semiconductor laser arrays;
a condenser lens provided, in common, for a plurality of collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern is formed through entering of the collimated light beam arrays, the light incident row pattern including a plurality of light incident regions arranged in a side-by-side arrangement manner; and
an optical fiber including a substantially-circular-shaped light incident end surface where light from the condenser lens enters, wherein
a condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from a condenser lens incident optical path length of any other one of the semiconductor laser arrays, the condenser lens incident optical path length being defined as a length of an optical path from each of the semiconductor laser arrays to the condenser lens,
a collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface of the condenser lens, the predetermined light incident region being other than the outermost light incident region in the light incident row pattern,
the condenser lens incident optical path lengths of the respective semiconductor laser arrays are different from each other, and
a collimated light beam array derived from one of the semiconductor laser arrays that corresponds to a larger condenser lens incident optical path length is directed to a more center-sided light incident region in the light incident row pattern, as compared with a collimated light beam array derived from one of the semiconductor laser arrays that corresponds to a smaller condenser lens incident optical path length.
2. The semiconductor laser device according to claim 1 , further comprising a step-shaped mounting surface including a plurality of element mounting surfaces that form a shape of steps, wherein
providing of the semiconductor laser arrays on the respective element mounting surfaces causes the condenser lens incident optical path lengths of the respective semiconductor laser arrays to be different from each other.
3. The semiconductor laser device according to claim 2 , wherein the step-shaped mounting surface comprises a surface of a heat sink.
4. The semiconductor laser device according to claim 2 , further comprising a folding mirror, wherein
the step-shaped mounting surface comprises two step-shaped mounting surfaces each including the plurality of element mounting surfaces and disposed to oppose each other, the semiconductor laser arrays being provided on the respective element mounting surfaces,
the folding mirror is provided between the step-shaped mounting surfaces, and
the collimated light beam arrays that are derived from the respective semiconductor laser arrays and reflected from the folding mirror enter the light incident surface of the condenser lens.
5. The semiconductor laser device according to claim 1 , wherein
the semiconductor laser arrays comprise three or more semiconductor laser arrays,
the condenser lens incident optical path lengths of the respective three or more semiconductor laser arrays are different from each other, and
a collimated light beam array derived from one of the three or more semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a more center-sided light incident region in the light incident row pattern, as compared with a collimated light beam array derived from any other one or more of the three or more semiconductor laser arrays.
6. A semiconductor laser device, comprising:
a plurality of semiconductor laser arrays each including a plurality of linearly-disposed light emitting elements;
collimating members each disposed in an optical path of a light beam array emitted from each of the semiconductor laser arrays;
a condenser lens provided, in common, for a plurality of collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern is formed through entering of the collimated light beam arrays, the light incident row pattern including a plurality of light incident regions arranged in a side-by-side arrangement manner; and
an optical fiber including a substantially-circular-shaped light incident end surface where light from the condenser lens enters, wherein
a condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from a condenser lens incident optical path length of any other one of the semiconductor laser arrays, the condenser lens incident optical path length being defined as a length of an optical path from each of the semiconductor laser arrays to the condenser lens,
a collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface of the condenser lens, the predetermined light incident region being other than the outermost light incident region in the light incident row pattern,
the semiconductor laser arrays comprise three or more semiconductor laser arrays,
the condenser lens incident optical path lengths of the respective three or more semiconductor laser arrays are different from each other, and
a collimated light beam array derived from one of the three or more semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a more center-sided light incident region in the light incident row pattern, as compared with a collimated light beam array derived from any other one or more of the three or more semiconductor laser arrays.
7. A semiconductor laser device, comprising:
a plurality of semiconductor laser arrays each including a plurality of linearly-disposed light emitting elements;
collimating members each disposed in an optical path of a light beam array emitted from each of the semiconductor laser arrays;
a condenser lens provided, in common, for a plurality of collimated light beam arrays outputted from the respective collimating members, and including a light incident surface on which a light incident row pattern is formed through entering of the collimated light beam arrays, the light incident row pattern including a plurality of light incident regions arranged in a side-by-side arrangement manner;
an optical fiber including a substantially-circular-shaped light incident end surface where light from the condenser lens enters;
a folding mirror; and
a step-shaped mounting surface including a plurality of element mounting surfaces that form a shape of steps, wherein
a condenser lens incident optical path length of at least one of the semiconductor laser arrays is different from a condenser lens incident optical path length of any other one of the semiconductor laser arrays, the condenser lens incident optical path length being defined as a length of an optical path from each of the semiconductor laser arrays to the condenser lens,
a collimated light beam array derived from one of the semiconductor laser arrays that corresponds to the largest condenser lens incident optical path length is directed to a predetermined light incident region in the light incident surface of the condenser lens, the predetermined light incident region being other than the outermost light incident region in the light incident row pattern,
providing of the semiconductor laser arrays on the respective element mounting surfaces causes the condenser lens incident optical path lengths of the respective semiconductor laser arrays to be different from each other,
the step-shaped mounting surface comprises two step-shaped mounting surfaces each including the plurality of element mounting surfaces and disposed to oppose each other, the semiconductor laser arrays being provided on the respective element mounting surfaces,
the folding mirror is provided between the step-shaped mounting surfaces, and
the collimated light beam arrays that are derived from the respective semiconductor laser arrays and reflected from the folding mirror enter the light incident surface of the condenser lens.