Devices including independently controllable absorption region and multiplication region electric fields
A device includes a first region, a multiplication region, a second region, and an absorption region. The first region is associated with a first terminal, and the second region is associated with a second terminal. The first region is separated from the second region by the multiplication region. The absorption region is disposed on the multiplication region and associated with a third terminal. A multiplication region electric field is independently controllable with respect to an absorption region electric field, based on the first terminal, the second terminal, and the third terminal.
1. A device comprising:
a first region associated with a first terminal;
a second region associated with a second terminal and separated, based on a separation distance, from the first region by a multiplication region; and
an absorption region disposed on the multiplication region and associated with a third terminal, wherein at least one edge of the absorption region does not overlap beyond an extent of the separation distance;
wherein a multiplication region electric field is independently controllable with respect to an absorption region electric field, based on the first terminal, the second terminal, and the third terminal.
2. The device of claim 1 , wherein the multiplication region and absorption region are shaped as a resonance cavity to provide resonance enhancement and an optical absorption path along the resonance cavity having an effective length greater than linear dimensions of the device.
3. The device of claim 2 , wherein the optical absorption path is to enable light absorption based on a plurality of round trips along the optical absorption path.
4. The device of claim 1 , wherein the multiplication region electric field is to cause an amplified avalanche effect in the multiplication region based on a separation distance between the first region and the second region.
5. The device of claim 1 , wherein the multiplication region is an undoped intrinsic material associated with an impact ionization coefficient.
6. The device of claim 1 , wherein the first region, a first portion of the multiplication region, and the second region are disposed in a substrate as a waveguide resonance structure, and a second portion of the multiplication region is disposed on the substrate as a buffer layer.
7. The device of claim 6 , wherein the absorption region and the second portion of the multiplication region are disposed on the first portion of the multiplication region.
8. The device of claim 1 , further comprising a waveguide to critically couple light from the waveguide into the multiplication region based on a coupling coefficient, to form a resonant enhancement based on a resonant wavelength.
9. The device of claim 1 , further comprising a charge layer disposed between the absorption region and the multiplication region to confine the multiplication region electric field to the multiplication region.
10. A resonant avalanche photodiode (APD) comprising:
a silicon-on-insulator (SOI) substrate including a PIN junction based on a first region associated with a first terminal, an intrinsic silicon multiplication region, and a second region associated with a second terminal, wherein the intrinsic silicon multiplication region includes first and second portions, and wherein the second portion has a stepped geometry to affect optical mode confinement; and
an absorption region disposed on the multiplication region and having a third terminal;
wherein a multiplication region electric field is independently controllable with respect to an absorption region electric field, based on the first terminal, the second terminal, and the third terminal.
11. The APD of claim 10 , wherein the absorption region is associated with a moderate absorption coefficient, and a multiplication region is substantially transparent to the coupled light based on a low optical absorption coefficient.
12. The APD of claim 10 , wherein a multiplication region electric field is based on an avalanche breakdown voltage less than or equal to approximately 12 volts.
13. The APD of claim 10 , wherein the multiplication region includes an intrinsic silicon buffer layer disposed on the SOI substrate.
14. A method, comprising:
biasing a first region of a photodiode based on a first terminal that is spaced from the first region and electrically coupled to the first region using a first via;
biasing a second region of the photodiode based on a second terminal, wherein the second region is separated from the first region by a multiplication region, and wherein the second terminal is spaced from the second region and electrically coupled to the second region using a second via; and
biasing an absorption region of the photodiode, disposed on the multiplication region, based on a third terminal that is spaced from the absorption region and electrically coupled to the absorption region using a third via;
wherein a multiplication region electric field is independently controllable with respect to an absorption region electric field, based on biasing the first terminal, the second terminal, and the third terminal.
15. The method of claim 14 , further comprising generating a carrier at the absorption region based on critically coupled light, and biasing the first terminal, the second terminal, and the third terminal to transport the generated carrier from the absorption region to the multiplication region at an energy level below a threshold for impact ionization.