Carbon nanotube temperature and pressure sensors
The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.
1. A sensor comprising:
a sensor element including a plurality of electrically interconnected nanostructures in which electrical properties of the electrically interconnected nanostructures are varied by application of temperature or pressure to the sensor element, the plurality of electrically interconnected nanostructures provide at least part of a resonator;
a power supply to the plurality of electrically interconnected nanostructures, wherein the connectivity of the power supply to the electrically interconnected nanostructures provides a circuit, wherein changes in the electrical properties result in an impedance change in the sensor element of the circuit that is correlated to temperature or pressure, wherein the impedance change between 1 Hz and 300 KHz is correlated for temperature.
2. The sensor of claim 1 , wherein the sensor is a temperature sensor.
3. The sensor of claim 2 , wherein the electrically interconnected nanostructures comprise carbon nanotubes having a linear temperature dependent resistance.
4. The sensor of claim 2 , wherein the electrically interconnected nanostructures are comprised of a mat or single or multi-wall carbon nanotubes.
5. The sensor of claim 1 , wherein the sensor is a pressure sensor.
6. The sensor of claim 5 , wherein the electrically interconnected nanostructures are vertically aligned carbon nanotubes.
7. The sensor of claim 6 , wherein the electrically interconnected nanostructures are present atop a substrate and underlying a flexible skin.
8. The sensor of claim 6 , wherein increases in temperature of the electrically interconnected nanostructures from 24° to 100° C. produces an increase in resistance of at least 0.5% or less.
9. The sensor of claim 1 , wherein the impedance change is remotely detected for correlation.
10. The sensor of claim 1 , wherein the power supply is connected to the plurality of electrically interconnected nanostructures via an electrical contact.
11. The sensor of claim 1 , wherein the power supply is an AC power supply.