Inspection method for lithography
The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
1. An inspection apparatus comprising:
an optical system configured to focus a radiation beam into a measurement spot onto a substrate, the measurement spot comprising:
a target area comprising a periodic structure on the substrate, and
an area surrounding the target area:
a detector, positioned in a pupil plane of a high numerical aperture lens of the optical system, configured to detect a signal, wherein:
a first portion of the signal corresponds to a first portion of the radiation beam reflected from the target area, and
a second portion of the signal corresponds to a second portion of the radiation beam reflected only from the area surrounding the target area, the second portion of the signal being different from the first portion of the signal; and
a processor configured to:
derive a property of the substrate using the first portion of the signal; and
eliminate the second portion of the signal.
2. The inspection apparatus according to claim 1 , wherein;
the first portion of the signal corresponds to a first diffraction pattern; and
the second portion of the signal corresponds to a second diffraction pattern when the area surrounding the target area comprises a plurality of patterned areas.
3. The inspection apparatus according to claim 1 , wherein the target area is smaller than 15 by 15 microns.
4. The inspection apparatus according to claim 1 , wherein the processor is configured to derive a dimension of the periodic structure within the target area based on the first portion of the signal.
5. The inspection apparatus according to claim 1 , wherein the target area is within a product die on the substrate.
6. The inspection apparatus according to claim 1 , wherein the measurement spot is larger than the target area in at least one dimension.
7. A method of measuring a parameter of a lithographic process, the method comprising:
focusing, using an optical system, a radiation beam into a measurement spot on a substrate, the measurement spot comprising:
a target area comprising a periodic structure on the substrate, and
an area surrounding the target area;
detecting, using a detector positioned in a pupil plane of a high numerical aperture lens of the optical system, a signal wherein:
a first portion of the signal corresponds to a first portion of the radiation beam reflected from the target area, and
a second portion of the signal corresponds to a second portion of the radiation beam reflected only from the area surrounding the target area, the second portion of the signal being different from the first portion of the signal;
deriving, using a processor, a property of the substrate based on the first portion of the signal; and
eliminating, using the processor, the second portion of the signal.
8. The method according to claim 7 , wherein:
the first portion of the signal corresponds to a first diffraction pattern; and
the second portion of the signal corresponds to a second diffraction pattern when the area surrounding the target area comprises a plurality of patterned areas.
9. The method according to claim 7 , comprising:
deriving, using the processor, a dimension of the periodic structure within the target area based on the first portion of the signal.
10. The method according to claim 7 , comprising:
deriving, using the processor, a thickness of a layer on the substrate based on the first portion of the signal.
11. The method according to claim 7 , comprising:
deriving, using the processor, a profile of a structure within the target area or a dimension of the structure within the target area based on the first portion of the signal.
12. The method according to claim 7 , further comprising determining an error in overlay of a first grating superimposed on a second grating within the target area.
13. The method according to claim 7 , further comprising selecting a portion of the radiation beam using an aperture at an intermediate image plane of the optical system in order to reduce a dimension of the measurement spot.
14. The method according to claim 7 , further comprising mathematically differentiating a first diffraction spectrum from a second diffraction spectrum, wherein:
the first diffraction spectrum corresponds to the first portion of the signal; and
the second diffraction spectrum corresponds to the second portion of the signal, the second diffraction spectrum being different from the first diffraction spectrum.
15. The method according to claim 7 , further comprising selecting a wavelength of the radiation, wherein the wavelength is scattered by the target area and is unscattered by the area surrounding the target area.
16. The method according to claim 7 , further comprising using an area smaller than 15 by 15 microns as the target area.
17. The method according to claim 7 , further comprising using an area within a product die on the substrate as the target area.
18. A lithographic apparatus comprising:
an illumination system configured to illuminate a pattern comprising a sub-pattern of a periodic structure;
a projection system configured to project an image of the pattern on to a substrate; and
an inspection apparatus configured to derive a property of the substrate by measuring a target area on the substrate, the inspection apparatus comprising:
an optical system configured to focus a radiation beam into a measurement spot onto the substrate, the measurement spot comprising:
the target area comprising the periodic structure on the substrate, and
an area surrounding the target area;
a detector, positioned in a pupil plane of a high numerical aperture lens of the optical system, configured to detect a signal, wherein:
a first portion of the signal corresponds to a first portion of the radiation beam reflected from the target area, and
a second portion of the signal corresponds to a second portion of the radiation beam reflected only from the area surrounding the target area, the second portion of the signal being different from the first portion of the signal; and
a processor configured to:
derive a property of the substrate using the first portion of the signal; and
eliminate the second portion of the signal.
19. A lithographic cell comprising:
a coater configured to coat a substrate with a radiation sensitive layer;
a lithographic apparatus configured to expose images onto the radiation sensitive layer;
a developer configured to develop images exposed by the lithographic apparatus; and
an inspection apparatus configured to derive a property of the substrate by measuring a target area on the substrate, the inspection apparatus comprising:
an optical system configured to focus a radiation beam into a measurement spot onto the substrate, the measurement spot comprising:
the target area comprising a periodic structure on the substrate, and
an area surrounding the target area;
a detector, positioned in a pupil plane of a high numerical aperture lens of the optical s stem configured to detect a signal, wherein:
a first portion of the signal corresponds to a first portion of the radiation beam reflected from the target area, and
a second portion of the signal corresponds to a second portion of the radiation beam reflected only from the area surrounding the target area, the second portion of the signal being different from the first portion of the signal; and
a processor configured to:
derive a property of the substrate using the first portion of the signal; and
eliminate the second portion of the signal.
20. A device manufacturing method comprising:
using a lithographic apparatus to form a pattern on a substrate, the pattern comprising a sub-pattern of a periodic structure; and
determining a value related to a parameter of the pattern, the determining comprising:
focusing a radiation beam into a measurement spot onto the substrate using an optical system, the measurement spot comprising:
the pattern on the substrate, and
an area surrounding the pattern; and
detecting, using a detector positioned in a pupil plane of a high numerical aperture lens of the optical system, a signal wherein:
a first portion of the signal corresponds to a first portion of the radiation beam reflected from the target area, and
a second portion of the signal corresponds to a second portion of the radiation beam reflected only from the area surrounding the target area, the second portion of the signal being different from the first portion of the signal;
deriving, using a processor, a property of the substrate based on the first portion of the signal; and
eliminating, using the processor, the second portion of the signal.
21. The inspection apparatus according to claim 1 , wherein:
the target area comprises target features oriented along a first direction; and
at least portions of the area surrounding the target area that are adjacent to the target area comprise pattern features oriented along a second direction, the second direction being different from the first direction.
22. The inspection apparatus according to claim 21 , wherein the first direction is perpendicular to the second direction.
23. The inspection apparatus according to claim 1 , wherein the area surrounding the target area comprises an unpatterned area.
24. The inspection apparatus according to claim 1 , wherein:
the target area comprises a first pattern; and
the area surrounding the target area comprises patterned areas, wherein at least one of the patterned areas adjacent to the target area comprises a second pattern, the second pattern being different from the first pattern.
25. The inspection apparatus according to claim 24 , wherein the patterned areas comprise metrology target areas or device pattern areas.
26. The inspection apparatus according to claim 24 , wherein the second portion of the signal comprises a plurality of signals, each signal of the plurality of signals corresponding to a sub-portion of the second portion of the radiation beam reflected from a corresponding one of the patterned areas.
27. The method according to claim 7 , further comprising:
using target features oriented along a first direction in the target area; and
using pattern features oriented along a second direction in at least portions of the area surrounding the target area that are adjacent to the target area, the second direction being different from the first direction.
28. The method according to claim 27 , wherein the first direction is perpendicular to the second direction.
29. The method according to claim 7 , further comprising using an unpatterned area as the area surrounding the target area.
30. The method according to claim 7 , further comprising:
using a first pattern in the target area; and
using patterned areas in the area surrounding the target area, wherein at least one of the patterned areas adjacent to the target area comprises a second pattern, the second pattern being different from the first pattern.
31. The method according to claim 30 , further comprising using metrology target areas or device pattern areas as the patterned areas.
32. The method according to claim 30 , wherein the second portion of the signal comprises a plurality of signals, each of the plurality of signals corresponding to a sub-portion of the second portion of the radiation beam reflected from a corresponding one of the patterned areas.