Nonlinear optical device manufactured with 4H silicon carbide crystal
Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam ( 12 ) at a frequency to generate at least a light beam ( 16 ) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal ( 13 ). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 μm and 6.6-7.08 μm), a relatively great 2 nd -order nonlinear optical coefficient (d 15 =6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm −1 K −1 ), and a high chemical stability.
1. A nonlinear optical device, comprising:
at least a 4H silicon carbide crystal configured to alter, by nonlinear optical frequency conversion based on type II phase matching, at least a first light beam at a frequency to generate at least another light beam at a further frequency different from the frequency of the first light beam, wherein the generated light beam has a wavelength in a range of 3.4-7.1 μm.
2. The nonlinear optical device according to claim 1 , wherein the 4H silicon carbide crystal has a space group of P6 3 mc, where each crystal cell includes four carbon/silicon atom layers arranged in ABCB.
3. The nonlinear optical device according to claim 1 , wherein the 4H silicon carbide crystal is configured to achieve critical phase matching for nonlinear optical frequency conversion by adjusting a temperature of the crystal.
4. The nonlinear optical device according to claim 1 , wherein the 4H silicon carbide crystal has at least one surface thereof optically polished.
5. The nonlinear optical device according to claim 1 , wherein the 4H silicon carbide crystal has a surface thereof coated with an anti-reflective film, a high reflective film and/or a transreflective film.
6. The nonlinear optical device according to claim 1 , further comprising at least a laser configured to generate the light beam at the frequency to be incident onto the 4H silicon carbide crystal.