Monolithically integrated antenna and receiver circuit
The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET 1 , FET 2 ), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An electrode is connected to the antenna structure such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure ( 1 ) can be fed into the channel between electrodes and the control electrode is connected to an electrode via a capacitor and/or the control electrode and the first electrode or the control electrode and the second electrode have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode and the first electrode or the second electrode.
1. Device for detecting electromagnetic radiation in the THz frequency range from 100 GHz to 30 THz comprising:
at least one field effect transistor (FET 1 , FET 2 ), which has a drain (D) as first electrode, a source (S) as second electrode, a gate (G) as control electrode and a channel between the first electrode (D) and the second electrode (S); and
an antenna structure ( 1 ),
wherein the field effect transistor (FET 1 , FET 2 ) and the antenna structure are arranged together on a single substrate,
wherein the first electrode (D) of the field effect transistor (FET 1 , FET 2 ) is connected in a directly electrically conductive manner to the antenna structure ( 1 ) by an uninterrupted electrical conductor to form a conductive connection between the first electrode (D) and the antenna structure ( 1 ) such that an electromagnetic signal in the THz frequency range from 100 GHz to 30 THz received by the antenna structure ( 1 ) can be fed into the channel between the first electrode (D) and the second electrode (S) of the field effect transistor (FET 1 , FET 2 ) via the conductive connection between the first electrode (D) and the antenna structure ( 1 ), and
wherein the device is configured in accordance with a configuration selected from the group consisting of:
(i) the control electrode (G) is connected via an external capacitance (C 1 , C 2 ) to the second electrode (S) such that no AC voltage drop occurs between the control electrode (G) and the second electrode (S);
(ii) the control electrode (G) is not connected via an external capacitance to the second electrode (S), but the control electrode (G) and the second electrode (S) have an intrinsic capacitance such that no AC voltage drop occurs between the control electrode (G) and the second electrode (S); and
(iii) the control electrode (G) is connected via an external capacitance (C 1 , C 2 ) to the second electrode (S), and the control electrode (G) and the second electrode (S) have an intrinsic capacitance, such that no AC voltage drop occurs between the control electrode (G) and the second electrode (S).
2. Device according to claim 1 , wherein the antenna structure ( 1 ) has a terminal ( 2 , 3 ), which is connected in an electrically conductive manner to the first electrode (D).
3. Device according to claim 1 , wherein it has two transistors (FET 1 , FET 2 ).
4. Device according to claim 3 , wherein the transistors (FET 1 , FET 2 ) are connected in parallel, wherein the second electrodes (S) of the two transistors (FET 1 , FET 2 ) are connected to one another in an electrically conductive manner.
5. Device according to claim 3 , wherein the antenna structure ( 1 ) has two terminals ( 2 , 3 ), which are each connected to the first electrode (D) of one the transistors (FET 1 , FET 2 ) such that the transistors (FET 1 , FET 2 ) can be differentially driven.
6. Device according to claim 1 , wherein the first electrode (D) of the transistor (FET 1 , FET 2 ) is connected both in an electrically conductive manner to the antenna structure ( 1 ′) and in an electrically conductive manner to a further terminal ( 20 ), such that an electromagnetic signal in the THz frequency range received by the antenna structure ( 1 ′) can be fed into the channel between the first electrode (D) and the second electrode (S) of the transistor (FET 1 , FET 2 ) and, via the further terminal ( 20 ), an output signal ( 5 ) of the transistor (FET 1 , FET 2 ) can be picked off, a further signal can be fed to the first electrode (D) of the transistor, or both.
7. Device according to claim 6 , wherein the device has a calibration source ( 22 ) for an electromagnetic calibration signal, wherein the further terminal ( 20 ) is connected to the calibration source ( 22 ).
8. Device according to claim 6 , wherein the further terminal ( 20 ) is connected to a bias tee ( 21 ), wherein the bias tee ( 21 ) provides an output terminal ( 5 ) for picking off the output signal of the field effect transistors (FET 1 , FET 2 ) and wherein the bias tee ( 21 ) is connected to a calibration source ( 22 ) for an electromagnetic calibration signal.
9. Device according to claim 6 , wherein the further terminal is connected to a point of symmetry of the antenna structure ( 1 ′) or to a point ( 20 ) on an axis of symmetry of the antenna structure ( 1 ′).
10. Device according to claim 1 , wherein it has a ground plane ( 4 ) which is arranged between the antenna structure ( 1 ) and the transistor (FET 1 , FET 2 ).
11. Device according to claim 1 , wherein there is a capacitance between the control electrode and the second electrode (S) due to said external capacitance, said intrinsic capacitance, or a combination of said external capacitance and said intrinsic capacitance, wherein the capacitance between the control electrode and the second electrode (S) is greater than 0.1 fF.
12. Device according to claim 1 , wherein the first electrode (D) of the transistor (FET 1 , FET 2 ) is connected in an electrically conductive manner via an impedance matching element (TL 1 , TL 2 ), preferably a waveguide, to the antenna structure ( 1 ).
13. THz heterodyne receiver with at least one device according to claim 1 .
14. Imaging system with at least one device according to claim 1 .
15. Device according to claim 1 , wherein the control electrode (G) is connected to a DC source.
16. Device for detecting electromagnetic radiation in the THz frequency range from 100 GHz to 30 THz comprising:
at least one field effect transistor (FET 1 , FET 2 ), which has a drain (D) as first electrode, a source (S) as second electrode, a gate (G) as control electrode and a channel between the first electrode (D) and the second electrode (S); and
an antenna structure ( 1 ),
wherein the field effect transistor (FET 1 , FET 2 ) and the antenna structure are arranged together on a single substrate,
wherein the second electrode (S) of the field effect transistor (FET 1 , FET 2 ) is connected in a directly electrically conductive manner to the antenna structure ( 1 ) by an uninterrupted electrical conductor to form a conductive connection between the second electrode (S) and the antenna structure ( 1 ) such that an electromagnetic signal in the THz frequency range from 100 GHz to 30 THz received by the antenna structure ( 1 ) can be fed into the channel between the first electrode (D) and the second electrode (S) of the field effect transistor (FET 1 , FET 2 ) via the conductive connection between the second electrode (S) and the antenna structure ( 1 ), and
Wherein the device is configured in accordance with a configuration selected from the group consisting of:
(i) the control electrode (G) is connected via an external capacitance (C 1 , C 2 ) to the first electrode (D) such that no AC voltage drop occurs between the control electrode (G) and the first electrode (D);
(ii) the control electrode (G) is not connected via an external capacitance to the first electrode (D), but the control electrode (G) and the first electrode (D) have an intrinsic capacitance such that no AC voltage drop occurs between the control electrode (G) and the first electrode (D); and
(iii) the control electrode (G) is connected via an external capacitance (C 1 , C 2 ) to the first electrode (D), and the control electrode (G) and the first electrode (D) have an intrinsic capacitance, such that no AC voltage drop occurs between the control electrode (G) and the first electrode (D).
17. Device according to claim 16 , wherein the antenna structure ( 1 ) has a terminal ( 2 , 3 ), which is connected in an electrically conductive manner to the second electrode (S).
18. Device according to claim 16 , wherein it has two transistors (FET 1 , FET 2 ).
19. Device according to claim 18 , wherein the transistors (FET 1 , FET 2 ) are connected in parallel, wherein the first electrodes (D) of the two transistors (FET 1 , FET 2 ) are connected to one another in an electrically conductive manner.
20. Device according to claim 18 , wherein the antenna structure ( 1 ) has two terminals ( 2 , 3 ), which are each connected to the second electrode (S) of one the transistors (FET 1 , FET 2 ) such that the transistors (FET 1 , FET 2 ) can be differentially driven.
21. Device according to claim 16 , wherein the second electrode (S) of the transistor (FET 1 , FET 2 ) is connected both in an electrically conductive manner to the antenna structure ( 1 ′) and in an electrically conductive manner to a further terminal ( 20 ), such that an electromagnetic signal in the THz frequency range received by the antenna structure ( 1 ′) can be fed into the channel between the first electrode (D) and the second electrode (S) of the transistor (FET 1 , FET 2 ) and, via the further terminal ( 20 ), an output signal ( 5 ) of the transistor (FET 1 , FET 2 ) can be picked off, a further signal can be fed to the second electrode (S) of the transistor, or both.
22. Device according to claim 21 , wherein the device has a calibration source ( 22 ) for an electromagnetic calibration signal, wherein the further terminal ( 20 ) is connected to the calibration source ( 22 ).
23. Device according to claim 21 , wherein the further terminal ( 20 ) is connected to a bias tee ( 21 ), wherein the bias tee ( 21 ) provides an output terminal ( 5 ) for picking off the output signal of the field effect transistors (FET 1 , FET 2 ) and wherein the bias tee ( 21 ) is connected to a calibration source ( 22 ) for an electromagnetic calibration signal.
24. Device according to claim 21 , wherein the further terminal is connected to a point of symmetry of the antenna structure ( 1 ′) or to a point ( 20 ) on an axis of symmetry of the antenna structure ( 1 ′).
25. Device according to claim 16 , wherein it has a ground plane ( 4 ) which is arranged between the antenna structure ( 1 ) and the transistor (FET 1 , FET 2 ).
26. Device according to claim 16 , wherein there is a capacitance between the control electrode and the first electrode (D) due to said external capacitance, said intrinsic capacitance, or a combination of said external capacitance and said intrinsic capacitance, wherein the capacitance between the control electrode and the first electrode (D) is greater than 0.1 fF.
27. Device according to claim 16 , wherein the second electrode (S) of the transistor (FET 1 , FET 2 ) is connected in an electrically conductive manner via an impedance matching element (TL 1 , TL 2 ), preferably a waveguide, to the antenna structure ( 1 ).
28. THz heterodyne receiver with at least one device according to claim 16 .
29. Imaging system with at least one device according to claim 16 .
30. Device according to claim 16 , wherein the control electrode (G) is connected to a DC source.