Stretchable form of single crystal silicon for high performance electronics on rubber substrates
The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
1. A two-dimensionally stretchable electronic device comprising:
a flexible substrate having a supporting surface; and
a semiconductor structure supported by said supporting surface and having a spatially-varying contour profile that varies in at least two lateral spatial dimensions relative to the supporting surface, wherein the semiconductor structure is discontinuously bonded to said supporting surface; and
wherein the contour profile varying in at least two spatial dimensions accommodates stretching, compressing, and/or flexing in more than one direction without device failure.
2. The two-dimensionally stretchable electronic device of claim 1 , wherein said two lateral spatial dimensions are orthogonal relative to each other.
3. The two-dimensionally stretchable electronic device of claim 1 , wherein said spatially varying contour profile is a herringbone wavy conformation, or a random wavy conformation.
4. The two-dimensionally stretchable electronic device of claim 1 , wherein the semiconductor structure comprises a buckled region that is physically separated from said supporting surface.
5. The two-dimensionally stretchable electronic device of claim 4 , further comprising an encapsulating layer positioned on said supporting surface and said semiconductor structure to embed said buckled region.
6. The two-dimensionally stretchable electronic device of claim 1 , further comprising an encapsulating layer that at least partially embeds said semiconductor structure.
7. The two-dimensionally stretchable electronic device of claim 6 , wherein the encapsulation layer comprises a polymer.
8. The two-dimensionally stretchable electronic device of claim 6 , wherein the encapsulation layer comprises a polyimide.
9. The two-dimensionally stretchable electronic device of claim 1 , wherein the flexible substrate comprises a polymer or paper.
10. The two-dimensionally stretchable electronic device of claim 1 , wherein said spatially-varying contour profile comprises a combination of convex and concave regions.
11. The two-dimensionally stretchable electronic device of claim 1 , wherein said spatially-varying contour profile is periodic in at least one of said two lateral spatial dimensions.
12. The two-dimensionally stretchable electronic device of claim 1 , wherein said spatially-varying contour profile is aperiodic in at least one of said two lateral spatial dimensions.
13. The two-dimensionally stretchable electronic device of claim 1 , wherein said spatially-varying contour profile has a periodicity of between 500 nm to 100 μm.
14. The two-dimensionally stretchable electronic device of claim 1 , wherein said spatially-varying contour profile has an amplitude of between 50 nm and 5 μm.
15. The two-dimensionally stretchable electronic device of claim 1 , further comprising an adhesive layer to bond said semiconductor structure to said supporting surface.
16. The two-dimensionally stretchable electronic device of claim 1 , further comprising a metal layer, a polymer layer, or a partial polymerized polymer precursor layer that bonds said semiconductor structure to said supporting surface.
17. The two-dimensionally stretchable electronic device of claim 1 , wherein the semiconductor structure comprises a single crystalline material selected from the group consisting of: Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP, GaInAsP, AlN, GaAlN, CdTe, and AlGaInAs.
18. The two-dimensionally stretchable electronic device of claim 1 configured for deformation from a planar shape into a curved shape with a strain introduction to the semiconductor structure that is less than 0.5%.