Contact-free photomixing probe for device and integrated circuit measurement or characterization
A device for measuring and characterizing solid-state devices or integrated circuits at RF frequencies up to 1.0 THz and beyond is provided that includes a transmitting photomixing probe structure and a receiving photomixing probe structure. The transmitting photomixing probe structure and the receiving photomixing probe structure are ac-coupled to the solid-state device or integrated circuit in a contact-free manner.
1. A device for measuring or characterizing a solid-state device or an integrated circuit at frequencies up to 1.0 THz and beyond comprising:
a transmitting photomixing probe; and
a receiving photomixing probe,
wherein during measuring or characterizing of the solid-state device or the integrated circuit, the solid-state device or the integrated circuit is embedded in a planar transmission line and the transmitting photomixing probe and the receiving photomixing probe are ac-coupled to the planar transmission line in such a manner that an air gap exists between the transmitting photomixing probe and the planar transmission line, and the receiving photomixing probe and the planar transmission line, thereby the transmitting photomixing probe and the receiving photomixing probe do not come into electrical contact with the planar transmission line.
2. The device of claim 1 , wherein the transmitting photomixing probe and the receiving photomixing probe include a dielectric-waveguide structure at the integrated circuit-end and a planar-transmission-line structure at the photomixer end.
3. The device of claim 2 , wherein the transmitting photomixing probe and the receiving photomixing probe are directly coupled to external lasers with optical fibers, wherein the end of the optical fiber is bonded in close proximity to the top plane of the photomixer and the axis of the fiber is perpendicular.
4. The device of claim 3 , wherein the two lasers have a mutually coherent but tunable frequency difference.
5. The device of claim 1 , wherein each photomixing probe comprises a high resistivity semiconductor substrate.
6. The device of claim 1 , wherein the solid-state device or the integrated circuit is embedded in a planar transmission line, and wherein an output from the solid-state device or integrated circuit is sampled in the planar transmission line.
7. The device of claim 6 , wherein the distance between the planar transmission line and each of the photomixing probes is in the range of 1 and 100 micron, the thickness of each photomixing probe is in the range of 10 to 1000 micron, and the height of each photomixing probe in the range of 0.1 to 10 mm.
8. The device of claim 6 , wherein the coplanar transmission line is a coplanar waveguide, a slot-line, a microstrip, or a twin line.
9. The device of claim 1 , wherein the ac-coupling occurs via an interaction between a polarization current in at least one of the transmitting photomixing probe or the receiving photomixing probe, and a fringing field just above the solid-state device or the integrated circuit under test.
10. The device of claim 9 , wherein the polarization current is transformed to a conduction current in the at least one of the transmitting photomixing probe or the receiving photomixing probe, and wherein once the polarization current is transformed to the conduction current, an electromagnetic field strength is measured by the receiving photomixing probe structure.
11. The device of claim 9 , wherein the conduction current is transformed to the polarization current in the at least one of the transmitting photomixing probe or the receiving photomixing probe, and wherein once the conduction current is transformed to the polarization current, an electromagnetic field strength is created by the transmitting photomixing probe.
12. The device of claim 1 , wherein at least one of the transmitting photomixing probe or the receiving photomixing probe comprises one or more “microforks”.
13. The device of claim 1 , wherein at least one of the transmitting photomixing probe or the receiving photomixing probe has an “orthorhombic” configuration.
14. The device of claim 1 , wherein each of the transmitting photomixing probe and the receiving photomixing probe comprises:
a tapered, coplanar-waveguide region; and
an interdigital-electrode region.
15. The device of claim 1 , wherein a signal generated by the transmitting photomixing probe is modulated via one of an amplitude modulation or a frequency modulation.
16. The device of claim 1 , wherein at least one of the transmitting photomixing probe or the receiving photomixing probe comprises a substrate that comprises silicon, gallium arsenide, gallium nitride, or indium phosphide.
17. The device of claim 1 , wherein at least one of the transmitting photomixing probe or the receiving photomixing probe was created at least in part via a laser micromachining process.
18. A method of measuring a solid-state device or an integrated circuit at an RF frequency up to 1.0 THz and beyond comprising:
providing a transmitting photomixing probe structure and a receiving photomixing probe structure;
embedding the solid-state device or an integrated circuit in a planar transmission line; and
coupling the transmitting photomixing probe structure and the receiving photomixing probe structure to the planar transmission line in such a manner that an air gap exists between the transmitting photomixing probe structure and the planar transmission line, and the receiving photomixing probe structure and the planar transmission line such that the transmitting photomixing probe and the receiving photomixing probe do not come into electrical contact with the planar transmission line.
19. The method of claim 18 , wherein an output from the solid-state device or integrated circuit is sampled in the same planar transmission line.
20. The method of claim 18 , further comprising modulating a signal from the transmitting photomixing probe structure via one of an amplitude modulation or a frequency modulation.