Semiconductor light emitting device
The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including an active layer, generating light via electron-hole recombination; a first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.
1. A semiconductor light emitting device, comprising:
a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;
a first electrode electrically connected with the first semiconductor layer for supplying electrons to the first semiconductor layer;
a second electrode electrically connected with the second semiconductor layer for supplying holes to the second semiconductor layer;
a non-conductive distributed bragg reflector interposed between the second electrode and the plurality of semiconductor layers, and coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and
a first light-transmitting film interposed between the second electrode and the non-conductive distributed bragg reflector and contacted with both the second electrode and the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the non-conductive distributed bragg reflector,
wherein the first light-transmitting film has a thickness greater than λ/4 n, wherein λ is a wavelength of light generated in the active layer and n is a refractive index of the first light-transmitting film,
wherein the first electrode is provided on the non-conductive distributed bragg reflector, and
wherein the device further comprises an electrical connection passing through the first light-transmitting film and the non-conductive distributed bragg reflector thereby electrically connecting the first semiconductor layer with the first electrode.
2. The semiconductor light emitting device of claim 1 , further comprising:
a second light-transmitting film made of a dielectric material, interposed between the plurality of semiconductor layers and the non-conductive bragg reflector and contacted with the non-conductive bragg reflector, wherein the electrical connection passes through the first light-transmitting film, the non-conductive distributed bragg reflector and the second light-transmitting film thereby electrically connecting the first electrode with the first semiconductor layer.
3. The semiconductor light emitting device of claim 2 , wherein the first light-transmitting film and the second light-transmitting film are composed of a same material.
4. The semiconductor light emitting device of claim 2 , wherein the second light-transmitting film has a refractive index lower than the effective refractive index of the non-conductive distributed bragg reflector.
5. The semiconductor light emitting device of claim 2 , further comprising:
an electrical connection passing through the first light-transmitting film, the non-conductive distributed bragg reflector and the second light-transmitting film thereby electrically connecting the second electrode with the second semiconductor layer.
6. The semiconductor light emitting device of claim 1 , wherein the first light-transmitting film is composed of a dielectric material.
7. The semiconductor light emitting device of claim 1 , wherein the first light-transmitting film is composed of SiO 2 .
8. The semiconductor light emitting device of claim 1 , further comprising:
an electrical connection passing through the first light-transmitting film and the non-conductive distributed bragg reflector thereby electrically connecting the second electrode with the second semiconductor layer.