Enhanced optical modulation using slow light
A photonic integrated circuit (PIC) is described. This PIC includes a semiconductor-barrier layer-semiconductor diode in an optical waveguide that conveys an optical signal, where the barrier layer is an oxide or a high-k material. Moreover, semiconductor layers in the semiconductor-barrier layer-semiconductor diode may include geometric features (such as a periodic pattern of holes or trenches) that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features. The optical waveguide is included in an optical modulator, such as a Mach-Zehnder interferometer (MZI).
1. An integrated circuit, comprising:
a first semiconductor layer;
an oxide layer disposed on a portion of the first semiconductor layer; and
a second semiconductor layer, disposed on the oxide layer, to define a semiconductor-oxide-semiconductor diode, wherein the semiconductor-oxide-semiconductor diode is included in an optical waveguide configured to convey an optical signal;
wherein the first semiconductor layer and the second semiconductor layer include electrical contacts configured to impart an electric potential across the semiconductor-oxide-semiconductor diode; and
wherein the first semiconductor layer and the second semiconductor layer include geometric features that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features, wherein the geometric features include a perturbation to a periodic pattern of geometric features, wherein the perturbation to the periodic pattern results in a non-periodic pattern of geometric features that is caused by a shift in at least one row of lattices.
2. The integrated circuit of claim 1 , wherein the integrated circuit includes:
a substrate; and
a buried-oxide layer disposed on the substrate; and
wherein the first semiconductor layer is disposed on the buried-oxide layer.
3. The integrated circuit of claim 2 , wherein the substrate, the buried-oxide layer and the first semiconductor layer comprise a silicon-on-insulator technology.
4. The integrated circuit of claim 1 , wherein the first semiconductor layer includes silicon and the second semiconductor layer includes polycrystalline silicon.
5. The integrated circuit of claim 1 , wherein the periodic pattern of geometric features include one of: a periodic pattern of holes and a periodic pattern of trenches.
6. The integrated circuit of claim 1 , wherein the optical waveguide has two arms that form an optical modulator.
7. The integrated circuit of claim 6 , wherein the optical modulator includes a Mach-Zehnder interferometer (MZI).
8. A system, comprising an integrated circuit, wherein the integrated circuit includes:
a first semiconductor layer;
an oxide layer disposed on a portion of the first semiconductor layer; and
a second semiconductor layer, disposed on the oxide layer, to define a semiconductor-oxide-semiconductor diode, wherein the semiconductor-oxide-semiconductor diode is included in an optical waveguide configured to convey an optical signal;
wherein the first semiconductor layer and the second semiconductor layer include electrical contacts configured to impart an electric potential across the semiconductor-oxide-semiconductor diode; and
wherein the first semiconductor layer and the second semiconductor layer include geometric features that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features, wherein the geometric features include a perturbation to a periodic pattern of geometric features, and wherein the perturbation to the periodic pattern results in a non-periodic pattern of geometric features that is caused by a shift in at least one row of lattices.
9. The system of claim 8 , wherein the integrated circuit includes:
a substrate; and
a buried-oxide layer disposed on the substrate; and
wherein the first semiconductor layer is disposed on the buried-oxide layer.
10. The system of claim 9 , wherein the substrate, the buried-oxide layer and the first semiconductor layer comprise a silicon-on-insulator technology.
11. The system of claim 8 , wherein the first semiconductor layer includes silicon and the second semiconductor layer includes polycrystalline silicon.
12. The system of claim 8 , wherein the periodic pattern of geometric features include one of: a periodic pattern of holes and a periodic pattern of trenches.
13. The system of claim 8 , wherein the optical waveguide has two arms that form an optical modulator.
14. The system of claim 13 , wherein the optical modulator includes a Mach-Zehnder interferometer (MZI).
15. A method for conveying propagation of an optical signal, the method comprising:
applying an electric potential across a semiconductor-oxide-semiconductor diode defined by a region of overlap of a first semiconductor layer, an oxide layer and a second semiconductor layer; and
conveying the optical signal through an optical waveguide that includes the semiconductor-oxide-semiconductor diode, wherein the first semiconductor layer and the second semiconductor layer include geometric features that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features, wherein the geometric features include a perturbation to a periodic pattern of geometric features, and wherein the perturbation to the periodic pattern results in a non-periodic pattern of geometric features that is caused by a shift in at least one row of lattices.
16. The method of claim 15 , wherein the first semiconductor layer is disposed on a buried-oxide layer;
wherein the buried-oxide layer is disposed on a substrate; and
wherein the substrate, the buried-oxide layer and the first semiconductor layer comprise a silicon-on-insulator technology.
17. The method of claim 15 , wherein the first semiconductor layer includes silicon and the second semiconductor layer includes polycrystalline silicon.
18. The method of claim 15 , wherein the periodic pattern of geometric features include one of: a periodic pattern of holes and a periodic pattern of trenches.
19. The method of claim 15 , wherein the optical waveguide has two arms that form an optical modulator.
20. The method of claim 19 , wherein the optical modulator includes a Mach-Zehnder interferometer (MZI).
21. An integrated circuit, comprising:
a first semiconductor layer;
an oxide layer disposed on a portion of the first semiconductor layer; and
a second semiconductor layer, disposed on the oxide layer, to define a semiconductor-oxide-semiconductor diode, wherein the semiconductor-oxide-semiconductor diode is included in an optical waveguide configured to convey an optical signal, wherein the optical waveguide has two arms that form an optical modulator, and wherein each arm in the optical waveguide forming the optical modulator has a length of less than 50 μm;
wherein the first semiconductor layer and the second semiconductor layer include electrical contacts configured to impart an electric potential across the semiconductor-oxide-semiconductor diode; and
wherein the oxide layer has a dielectric constant more than ten times larger than that of silicon dioxide.
22. The integrated circuit of claim 21 ,
wherein the optical modulator includes a Mach-Zehnder interferometer (MZI).