Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces
An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.
1. An optoelectronic device comprising a hybrid metal-dielectric optoelectronic interface disposed above an underlying substrate, wherein the hybrid metal-dielectric optoelectronic interface comprises i) an array of nanoscale dielectric resonant elements, and ii) a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film;
wherein the dielectric resonant elements have a spacing between 0.1λ to 10λ, where λ is a predetermined central operational wavelength of the device, wherein a width of each of the dielectric resonant elements is between 10% to 90% of the spacing, and wherein each of the dielectric resonant elements protrudes over the metal film by at least 0.05λ;
wherein the hybrid metal-dielectric optoelectronic interface and the underlying substrate have an absorption above 90% across a predetermined operational wavelength bandwidth.
2. The device of claim 1 wherein the predetermined operational wavelength bandwidth is the spectrum from 400 nm to 900 nm.
3. The device of claim 1 wherein at least 30% of an areial surface of the hybrid metal-dielectric optoelectronic interface is covered with the metal film.
4. The device of claim 1 wherein the hybrid metal-dielectric optoelectronic interface has a sheet resistance of at most 20 Ohm/sq.
5. The device of claim 1 further comprising iii) an anti-reflection coating on the array of dielectric resonant elements and the metal film; wherein the anti-reflection coating has a thickness in the range from 10 nm to a spacing between adjacent dielectric resonant elements.
6. The device of claim 5 wherein the anti-reflection coating has an index of refraction intermediate between that of the dielectric resonant elements and that of a predetermined operational environment.
7. The device of claim 1 further comprising a metal film layer on each of the dielectric resonant elements.
8. The device of claim 1 wherein the dielectric resonant elements are disposed such that they form a photonic crystal slab with a photonic bandgap.