Wafer cleaning device and method thereof
View Patent ↗A wafer cleaning device comprising a wafer stage for holding a wafer having a surface to be washed, a first nozzle positioned above the wafer, a second nozzle positioned above the wafer. A first height is between the first nozzle and the surface and a second height is between the second nozzle and the surface, wherein the first height is shorter than the second height.
1. A wafer cleaning device, comprising:
a stage for holding a wafer having a surface; and
a nozzle positioned above the wafer, and the nozzle comprising a plurality of openings, wherein heights are distances between the surface and each of the openings, the heights between the surface and each of the openings are different along with the relative location of each of the openings to the surface, and the surface is selected from a front side of the wafer and a backside of the wafer.
2. The wafer cleaning device of claim 1 , wherein at least three of the openings have different distances between each other.
3. The wafer cleaning device of claim 1 , wherein cleaning solutions sprayed from the openings are different.
4. The wafer cleaning device of claim 1 , wherein a cleaning solution is sprayed from each of the openings and forms a plurality of spraying areas, and the spraying areas cover a diameter of the wafer jointly.
5. The wafer cleaning device of claim 1 , wherein a cleaning solution is sprayed from each of the openings and forms a plurality of spraying areas, and the spraying areas cover a radius of the wafer jointly.
6. The wafer cleaning device of claim 1 , further comprising a plurality of the nozzles disposed above the wafer.
7. The wafer cleaning device of claim 1 , wherein the surface undergoes a process selected from the group consisting of a chemical mechanical polish (CMP) process, an etching process, and a development process.
8. A wafer cleaning method, comprising:
providing a wafer having a surface and a nozzle comprising a plurality of openings above the wafer, wherein heights are distances between the surface and each of the openings, the heights between the surface and each of the openings are different along with the relative location of each of the openings to the surface, the surface is selected from a front side of the wafer and a backside of the wafer; and
rotating the wafer and spraying a cleaning solution from each of the openings to clean the surface, wherein each of the openings has a spraying parameter individually, and the spraying parameter is a function of the relative location of each of the openings to the surface.
9. The wafer cleaning method of claim 8 , wherein the cleaning solution mixes with a gas before spraying from each of the openings.
10. The wafer cleaning method of claim 9 , the spraying parameter is selected from the group consisting of the flow rate of the cleaning solution, the cleaning solution used, the ratio between the cleaning solution and the gas, and the concentration of the cleaning solution.
11. The wafer cleaning method of claim 8 , wherein the wafer cleaning method is performed after a process selected from the group consisting of a chemical mechanical polish (CMP) process, an etching process, or a development process.
12. The wafer cleaning method of claim 8 , wherein a cleaning solution is sprayed from each of the openings and forms a plurality of spraying areas covering a diameter of the wafer jointly.