Wafer reconfiguration
View Patent ↗At least one water is embedded in a carrier to eliminate or at least reduce edge effect. The wafer reconfiguration is designed to improve a quality not only for spin coating process but also for electric plating process. An edge bead is formed on top of the carrier instead of being formed on top of the wafer so that a full top surface of the wafer can be active to the fabrication of chips and therefore more chips are yielded for a single wafer. The backside of the wafer is not contaminated by the coating according to the present invention. Further, dummy circuits can be made on top of the carrier so that electric plating uniformity for full area of a wafer can be improved.
1. A combination, comprising:
a wafer reconfiguration; and
a rotatable chuck holding the wafer reconfiguration thereon, and configured to spin the wafer reconfiguration during a spin coating process,
the wafer reconfiguration comprising:
a carrier;
at least one semiconductor wafer received in a space in the carrier; and
a sealing material filled in a gap between the semiconductor wafer and the carrier,
wherein
each of the carrier, the semiconductor wafer and the sealing material has, in a thickness direction of the semiconductor wafer,
a topmost surface, and
a bottommost surface opposite to the topmost surface in the thickness direction,
the topmost surface of the carrier, the topmost surface of the semiconductor wafer, and the topmost surface of the sealing material are all coplanar with each other,
the sealing material extends around an outer periphery of the semiconductor wafer,
the carrier extends around an outer periphery of the sealing material, and
the bottommost surface of the wafer is in direct contact with a topmost surface of the chuck, said topmost surface of the chuck supporting the wafer from below.
2. The combination as claimed in claim 1 , wherein
the bottommost surface of the carrier, the bottommost surface of the semiconductor wafer and the bottommost surface of the sealing material are all coplanar with each other.
3. The combination as claimed in claim 2 , wherein
the carrier is made of a material selected from the group consisting of Copper Clad Laminate and alloy 42, and
the sealing material is selected from the group consisting of epoxy and silicone.
4. The combination as claimed in claim 1 , further comprising:
a spin-coated material layer on top of the wafer reconfiguration,
wherein said spin-coated material layer comprises a middle portion having a uniform thickness and covering an entirety of the topmost surface of the semiconductor wafer.
5. The combination as claimed in claim 4 , wherein
the spin-coated material layer further comprises an edge bead continuous to the middle portion, and
the edge bead extends around the middle portion without overlapping the semiconductor wafer in the thickness direction.
6. The combination as claimed in claim 5 , wherein
the middle portion having the uniform thickness covers
an entirety of the topmost surface of the sealing material, and
a portion of the topmost surface of the carrier, and
the edge bead covers a remaining portion of the topmost surface of the carrier.
7. The combination as claimed in claim 4 , wherein
the middle portion having the uniform thickness covers
an entirety of the topmost surface of the sealing material, and
a portion of the topmost surface of the carrier.