SiAlON bonded silicon carbide material
A silicon carbide based material exhibiting high strength, good thermal shock resistance, high resistance to abrasion and being chemically stable to harsh environmental conditions is described. The carbide Ball Hill ceramic comprises a β-SiAlON bonding phase in which sintering is facilitated by at least one rare earth oxide sintering agents incorporated within the Vibrating Sieve batch admixture as starting materials. The residual rare earth sintering aid being chosen so as to impart good mechanical and refractory properties.
1. A ceramic material comprising:
an α-silicon carbide phase of 60 to 80% by weight having at least two mean grain sizes of i) 70 to 250 μm and ii) 0.5 to 50 μm;
a β-SiAlON phase of 20 to 40% by weight; and
an intergranular phase at least partially surrounding the α-silicon carbide and β-SiAlON phases of trace to 3% by weight comprising at least one rare earth element.
2. The material as claimed in claim 1 wherein the mean grain sizes comprise i) 110 to 200 μm and ii) 1 to 25 μm.
3. The material as claimed in claim 1 wherein the mean grain sizes comprise i) 115 to 155 μm and ii) 1 to 15 μm.
4. The material as claimed in claim 1 further comprising an α-silicon nitride phase of trace to 40% by weight.
5. The material as claimed in claim 1 wherein the intergranular phase further comprises iron of trace to 10% by weight.
6. The material as claimed in claim 1 further comprising silicon metal.
7. The material as claimed in claim 1 wherein the rare earth element comprises gadolinium and/or lanthanum.
8. The material as claimed in claim 1 wherein the material comprises ytterbium and/or yttrium.
9. The material as claimed in claim 1 wherein the intergranular phase comprises at least one of the following set of:
Sc; Y; La; Ce; Pr; Nd; Pm; Sm; Eu; Gd; Tb; Dy; Ho; Er; Tm; Yb; Lu.
10. The material as claimed in claim 1 wherein the intergranular phase is formed as a crystalline phase.
11. The material as claimed in claim 10 wherein the crystalline phase is a garnet phase.
12. The material as claimed in claim 1 wherein the intergranular phase is formed as a glass phase.
13. The material as claimed in claim 11 wherein the garnet phase is represented by the formula: (RE′/RE″) 3 Al 5 O 12
where RE′ and RE″ each comprise any one of the set of: Sc; Y; La; Ce; Pr; Nd; Pm; Sm; Eu; Gd; Tb; Dy; Ho; Er; Tm; Yb; Lu.
14. The material as claimed in claim 1 wherein the β-SiAlON phase is represented by Si 6-Z Al Z O Z N 8 -z wherein z is in the range 0.25 to 4.
15. The material as claimed in claim 14 wherein z is in the range 0.6 to 2.0.
16. The material as claimed in claim 1 further comprising a surface oxide layer at a surface of the material containing the intergranular phase and a silicon oxide phase.
17. The material as claimed in claim 16 wherein the surface oxide layer comprises predominantly a rare earth disilicate and the silicon oxide phase comprises silicon oxide cristobalite or the phases silicon oxynitride and/or O-SiAlON.
18. The material as claimed in claim 1 wherein the intergranular phase further comprises at least one or a combination of the elemental constituents: aluminium, oxygen, nitrogen and/or silicon.
19. A process for producing a ceramic material comprising:
preparing a powdered batch of an admixture comprising:
α-silicon carbide at 60 to 80% by weight having at least two mean grain sizes of i) 70 to 250 μm and ii) 0.5 to 50 μm;
powdered silicon metal at 15 to 20% by weight;
α-alumina at 2 to 6% by weight; and
at least one rare earth oxide at trace to 3% by weight;
processing the powdered batch to create a body; and
heat treating the body under a nitrogenous atmosphere to form: an α-silicon carbide phase; a β-SiAlON phase and an intergranular phase containing at least one rare earth element of the rare earth oxide as part of the ceramic material.
20. The process as claimed in claim 19 wherein the mean grain sizes comprise i) 115 to 200 μm and ii) 1 to 15 μm.
21. The process as claimed in claim 19 wherein the powdered staring materials further comprise:
iron (III) oxide trace to 10% by weight.
22. The process as claimed in claim 19 wherein the α-silicon carbide is present at:
70 to 250 μm mean grain sizes at 30 to 40% by weight
0.5 to 50 μm mean grain sizes at 30 to 40% by weight.
23. The process as claimed in claim 19 wherein the rare earth oxide comprises an oxide of gadolinium and/or lanthanum.
24. The process as claimed in claim 19 wherein the rare earth oxide comprises an oxide of ytterbium and/or yttrium.
25. The process as claimed in claim 19 wherein the intergranular phase comprises at least one of the following set of:
Sc; Y; La; Ce; Pr; Nd; Pm; Sm; Eu; Gd; Tb; Dy; Ho; Er; Tm; Yb; Lu.
26. The process as claimed in claim 19 wherein the rare earth oxide comprise any one of the set of: Y 2 O 3 and Yb 2 O 3 ; Y 2 O 3 and Gd 2 O 3 ; Y 2 O 3 and La 2 O 3 ; CeO 2 and La 2 O 3 ; La 2 O 3 and Gd 2 O 3 .
27. The process as claimed in claim 19 wherein the step of heat treating the body comprises heat treating at a temperature in the range 1300 to 1750° C.
28. The process as claimed in claim 27 comprising heat treating the body at a first processing temperature in the range 1400 to 1500° C.
29. The process as claimed in claim 28 comprising heat treating the body at a second processing temperature in the range 1550 to 1750° C.
30. The process as claimed in claim 29 wherein the step of heat treating the body at the first processing temperature comprises heat treating in a flowing nitrogenous atmosphere; and the step of heat treating the body at the second processing temperature comprises heat treating in a substantially static nitrogenous atmosphere.
31. The process as claimed in claim 30 comprising heat treating the body at the second processing temperature for three to five hours.
32. The process as claimed in claim 31 comprising heat treating the body at a third processing temperature in the range 1100° C. to 1400° C.
33. The process as claimed in claim 32 wherein the step of heat treating the body at the third processing temperature is configured to promote creation of a surface oxide layer comprising a rare earth disilicide, a cristobalite, a silicon oxynitride and/or O-SiAlON.