IP Library Granted Patent US 9,548,541
Granted Patent B2
US 9,548,541 · App. 14/673,601 · Granted Jan 17, 2017

Apparatus and method for a high aperture efficiency broadband antenna element with stable gain

Inventors: Tarek Djerafi (Montreal, CA); Ke Wu (Montreal, CA); Ajay Babu Guntupalli (Munich, DE); Kuangda Wang (Montreal, CA)
Assignee: HUAWEI TECHNOLOGIES CANADA CO., LTD.
H01Q13/106H01Q19/28H01Q21/064
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Quick Facts
Patent No.
US 9,548,541
App. No.
14/673,601
Granted
Jan 17, 2017
Kind
B2
Abstract

Embodiments are provided for an antenna element design with high aperture efficiency and stable gain across a frequency range. In an embodiment, the antenna element is obtained by placing a conductive layer on a dielectric substrate, forming a slot in the conductive layer, and forming two feed lines inside the dielectric substrate. A dielectric layer is placed on the dielectric substrate and over the conductive layer and the slot. A circular or elliptical conductive wall is formed inside the dielectric layer. A conductive element is also formed on the dielectric layer and over the slot. One or more second dielectric layers are placed on the dielectric layer and over the conductive element. A second circular or elliptical conductive wall is formed inside each second dielectric layer. A second conductive element is also formed on each second dielectric layer, over the conductive element.

Claims (43)

1. An antenna element structure comprising:

a dielectric substrate;

a conductive layer on the dielectric substrate;

two feed lines inside the dielectric substrate, the two feed lines in contact with the conductive layer;

a slot in the conductive layer exposing a surface of the dielectric substrate, the slot positioned between the two feed lines;

at least two dielectric layers on the dielectric substrate;

a conductive element on each dielectric layer, the conductive element positioned over the slot and between the feed lines; and

a conductive wall inside each dielectric layer and surrounding the conductive element.

2. The antenna element structure of claim 1 , wherein the conductive walls in each dielectric layer are in contact with each other.

3. The antenna element structure of claim 1 , wherein the conductive wall in a first dielectric layer on top of the dielectric substrate is in contact with the conductive layer on the dielectric substrate.

4. The antenna element structure of claim 1 , wherein the conductive element on a first dielectric layer on top of the dielectric substrate is a driven element.

5. The antenna element structure of claim 1 further comprising on each dielectric layer, a side-wall extension around a circumference of the conductive wall, the side-wall extension perpendicular to the conductive wall and surrounding the conductive element on the dielectric layer.

6. The antenna element structure of claim 5 , wherein the side-wall extension extends inside the circumference of the conductive wall.

7. The antenna element structure of claim 1 further comprising a dielectric resonator layer on a top dielectric layer.

8. The antenna element structure of claim 7 , wherein the dielectric resonator layer has a thickness multiple times larger than a thickness of the dielectric layers.

9. The antenna element structure of claim 7 , wherein the dielectric resonator layer has a permittivity higher than a permittivity of the dielectric layers.

10. The antenna element structure of claim 1 , wherein the conductive wall in each dielectric layer has a height extending an entire thickness of the dielectric layer.

11. The antenna element structure of claim 1 , wherein the conductive element on each dielectric layer is positioned concentrically with the conductive wall in the dielectric layer.

12. The antenna element structure of claim 11 , wherein the conductive walls in each second dielectric layer are aligned coaxially with the conductive elements.

13. The antenna element structure of claim 1 , wherein the conductive elements and the conductive walls are circular.

14. The antenna element structure of claim 1 , wherein the conductive elements and the conductive walls are elliptical.

15. The antenna element structure of claim 1 , wherein the slot is a rectangular slot oriented in a direction perpendicular to the two feed lines.

16. An antenna array structure comprising:

a dielectric substrate;

an array of adjacent antenna elements on the dielectric substrate, each antenna elements comprising:

a conductive layer on the dielectric substrate;

two feed lines inside the dielectric substrate, the two feed lines in contact with the conductive layer;

a slot in the conductive layer exposing a surface of the dielectric substrate, the slot positioned between the two feed lines;

at least two dielectric layers on the dielectric substrate;

a conductive element on each dielectric layer, the conductive element positioned over the slot and between the feed lines; and

a conductive wall inside each dielectric layer and surrounding the conductive element, the conductive wall having a height equal to a thickness of the dielectric layer.

17. The antenna array structure of claim 16 , wherein each antenna element further comprises:

on each dielectric layer, a side-wall extension around a circumference of the conductive wall, the side-wall extension perpendicular to the conductive wall and surrounding the conductive element on the dielectric layer.

18. The antenna array structure of claim 16 , wherein the conductive walls in each dielectric layer have different diameters.

19. A method for making an antenna element, the method comprising:

forming a conductive layer on a dielectric substrate;

forming a slot in the conductive layer, the slot exposing the dielectric substrate;

forming two feed lines inside the dielectric substrate;

placing at least two dielectric layers on the dielectric substrate and;

forming, inside each dielectric layer, a circular or elliptical conductive wall; and

forming a conductive element on each dielectric layer and over the slot.

20. The method of claim 19 further comprising forming, on each dielectric layer, a side-wall extension around a circumference of the circular or elliptical conductive wall, the side-wall extension perpendicular to the circular or elliptical conductive wall.

21. The method of claim 19 further comprising forming a dielectric resonator layer on a top dielectric layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2015
From: DJERAFI, TAREK; WU, KE; GUNTUPALLI, AJAY BABU; WANG, KUANGDA
To: HUAWEI TECHNOLOGIES CANADA CO., LTD.
Reel/Frame 036394/0061 →
Continuity (1)
Related Publication 20160294066A1 · Oct 6, 2016