X-ray radiation detector and method for measuring X-ray radiation
An x-ray radiation detector is disclosed with an upper side, which faces an x-ray radiation source during operation, and with a semiconductor layer for direct conversion of x-ray radiation into electric measurement signals. In an embodiment, a luminous film is arranged between the upper side and the semiconductor layer, and with the aid of which luminous film, electromagnetic radiation can be coupled into the semiconductor layer.
1. An X-ray radiation detector having a plurality of functional units comprising:
an upper side, which faces an X-ray radiation source during operation;
a semiconductor layer for direct conversion of X-ray radiation into electrical measuring signals; and
a luminous film having a plurality of segments, arranged between the upper side and the semiconductor layer, to aid in coupling electromagnetic radiation into the semiconductor layer such that an entirety of the semiconductor layer is uniformly polarized, wherein
each group of two or more of the plurality of segments is assigned to and is configured to be independently activated for one of the plurality of functional units such that a different intensity of the electromagnetic radiation is coupled into a central area of the corresponding functional unit relative to a peripheral area of the corresponding functional unit.
2. The X-ray radiation detector of claim 1 , wherein the luminous film covers the semiconductor layer completely in a planar manner.
3. The X-ray radiation detector of claim 1 , further comprising:
a filter film, provided between the luminous film and the semiconductor layer.
4. The X-ray radiation detector of claim 1 , wherein
an organic LED film is provided as the luminous film.
5. The X-ray radiation detector of claim 1 , wherein
an electroluminescence film is provided as the luminous film.
6. The X-ray radiation detector of claim 1 , wherein the plurality of segments are configured to be activated independently of each other.
7. The X-ray radiation detector of claim 1 , wherein each of the plurality of functional units includes a number of detector pixels.
8. The X-ray radiation detector of claim 1 , wherein the luminous film covers the semiconductor layer completely in a planar manner.
9. The X-ray radiation detector of claim 1 , further comprising:
a filter film, provided between the luminous film and the semiconductor layer.
10. The X-ray radiation detector of claim 2 , further comprising:
a filter film, provided between the luminous film and the semiconductor layer.
11. The X-ray radiation detector of claim 1 , wherein the electromagnetic radiation includes a wavelength greater than 500 nm.
12. A method for an X-ray radiation detector including an upper side, facing an X-ray radiation source during operation, and a semiconductor layer for direct conversion of X-ray radiation into electrical measuring signals, the X-ray radiation detector having a plurality of functional units, the method comprising:
providing a luminous film having a plurality of segments to, at least temporarily, couple electromagnetic radiation into the semiconductor layer such that an entirety of the semiconductor layer is uniformly polarized, and
assigning each group of two or more of the plurality of segments to one of the plurality of functional units, each group being independently activated for one of the plurality of functional units such that a different intensity of the electromagnetic radiation is coupled into a central area of the corresponding functional unit relative to a peripheral area of the corresponding functional unit.
13. The method as claimed in claim 12 , wherein the plurality of segments are configured to be activated independently of each other.
14. The method of claim 12 , wherein each of the plurality of functional units includes a number of detector pixels.
15. The method of claim 13 , wherein the intensity of the electromagnetic radiation during a preliminary phase is kept above a threshold value.
16. The method of claim 15 , wherein the intensity of the electromagnetic radiation is reduced at a start of a measuring phase following the preliminary phase (V).
17. The method of claim 15 , wherein the intensity of the electromagnetic radiation during a measuring phase following the preliminary phase is regulated depending on an expected X-ray radiation flow.
18. The method of claim 15 , wherein the intensity of the electromagnetic radiation during a measuring phase following the preliminary phase is regulated in such a way that a generated photocurrent is kept constant.
19. The method of claim 15 , wherein the intensity of the electromagnetic radiation during a measuring phase, following the preliminary phase, is kept constant.
20. A method for an X-ray radiation detector including an upper side, facing an X-ray radiation source during operation, and a semiconductor layer for direct conversion of X-ray radiation into electrical measuring signals, the X-ray radiation detector having a plurality of functional units, the method comprising:
at least temporarily coupling electromagnetic radiation into the semiconductor layer via a luminous film provided as part of the X-ray radiation detector such that an entirety of the semiconductor layer is uniformly polarized, the luminous film having a plurality of segments, and
assigning each group of two or more of the plurality of segments to one of the plurality of functional units, each group being independently activated for one of the plurality of functional units such that a different intensity of the electromagnetic radiation is coupled into a central area of the corresponding functional unit relative to a peripheral area of the corresponding functional unit.