Apparatus and method for fabricating epi wafer and epi wafer
A method for fabricating an epi wafer according to the embodiment comprises depositing an epi layer on a wafer in a first chamber; transferring the wafer to a second chamber connected to the first chamber; forming a protective layer on the wafer in the second chamber; and cooling the wafer in the second chamber. Further, an apparatus for fabricating an epi wafer according to the embodiment comprises a first chamber comprising an epi deposition part; a second chamber comprising a protective layer forming part and a cooling part; and a wafer transfer apparatus connected to lower portions of the first chamber and the second chamber.
1. A method for fabricating a silicon carbide epi wafer, the method comprising:
depositing an epi layer on a wafer in a first chamber;
transferring the wafer to a second chamber connected to the first chamber;
forming a protective layer on the wafer in the second chamber, wherein the protective layer comprises a SiO 2 layer;
cooling the wafer in the second chamber; and
removing the SiO 2 layer,
wherein the second chamber is maintained at a temperature in a range of 1000° C. to 1150° C., wherein an oxygen is supplied to the second chamber, and wherein the forming the protective layer is performed for 10 minutes to 30 minutes.
2. The method for fabricating the silicon carbide epi wafer of claim 1 , wherein the protective layer has a thickness in a range of about 50 nm to about 500 nm.
3. The method for fabricating the silicon carbide epi wafer of claim 1 , wherein the first chamber is maintained at a temperature in a range of 1300° C. to 1700° C.
4. The method for fabricating the silicon carbide epi wafer of claim 1 , wherein the cooling the wafer is performed for 60 minutes to 90 minutes.