Passive waveguide structures and integrated detection and/or imaging systems incorporating the same
View Patent ↗Passive components adapted for integration with at least one active semiconductor device, in an embodiment, comprise at least one metallic structure dimensioned and arranged to absorb and/or reflect a major fraction of incident electromagnetic radiation received at one or more wavelengths of a first group of wavelengths. This prevents radiation within the first group of wavelengths from being received and/or processed by the at least one active device. In an embodiment, one or more metallic structures are dimensioned and arranged to direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation within the second group of wavelengths by the at least one active semiconductor device. In some embodiments, the passive component comprises a passive optical filter for use in spectroscopic applications, and the active semiconductor device is a detector or sensor.
1. A passive component adapted for integration with at least one active semiconductor device, comprising:
at least one metallic structure dimensioned and arranged to at least one of
absorb or reflect a major fraction of incident radiation, received at one or more wavelengths of a first group of wavelengths, so as to prevent such major fraction of incident radiation from being one of received or processed by the at least one active device, or
direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation, within the second group of wavelengths, by the at least one active device,
wherein the at least one metallic structure comprises a lens structure so as to direct radiation toward the at least one active semiconductor device, wherein the lens structure comprises a plurality of metallic sections, and wherein the lens structure is embedded in a dielectric layer.
2. The passive component according to claim 1 , wherein the plurality of metallic sections is fabricated from one of aluminum, copper, silver, gold, or platinum.
3. The passive component according to claim 2 , wherein the plurality of metallic sections comprise one of rings or arcuate segments.
4. A system, comprising:
at least one active component defined on a first substrate, the at least one active component comprising a semiconductor device dimensioned and arranged to at least one of detect or process radiation incident thereon; and
at least one passive component defined on a substrate, the at least one passive component including
at least one metallic structure comprising a lens structure so as to direct radiation toward the at least one active component, the at least one metallic structure dimensioned and arranged to at least one of:
absorb or reflect a major fraction of incident radiation, received at one or more wavelengths of a first group of wavelengths, so as to prevent such major fraction of incident radiation from being one of received or processed by the at least one active component, or
direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation, within the second group of wavelengths, by the at least one active component,
wherein the lens structure comprises a plurality of metallic sections, and wherein the lens structure is embedded in a dielectric layer.
5. The system according to claim 4 , wherein the at least one passive component and at least one active component are supported by the same substrate.
6. The system according to claim 4 , wherein the plurality of metallic sections is fabricated from one of aluminum, copper, silver, gold, or platinum.
7. The system according to claim 6 , wherein the plurality of metallic sections comprise one of rings or arcuate segments.
8. A monolithically integrated fluorescence detection system, comprising:
a substrate of semiconductor material having
one or more active components fabricated thereon, the active components including one or more sensing devices or one more detector devices fabricated thereon; and
one or more passive components formed thereon, at least one passive component being respectively dimensioned and arranged to receive radiation exiting a corresponding analyte and to direct the radiation along a path terminating at one or more of the sensing or detector devices, wherein each passive component comprises
at least one metallic structure dimensioned and arranged to at least one of
absorb or reflect a major fraction of received exiting radiation, received at one or more wavelengths of a first group of wavelengths, so as to prevent such major fraction from being one of received or processed by at least one of the plurality of sensing devices or plurality of detecting device, or
direct an amount of received exiting radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable at least one of receiving or processing by the at least one of the plurality of sensing devices or plurality of detecting devices,
wherein the at least one metallic structure comprises a lens structure so as to direct radiation toward the one or more active components, wherein the lens structure comprises a plurality of metallic sections, and wherein the lens structure is embedded in a dielectric layer.
9. The system according to claim 8 , wherein the plurality of metallic sections is fabricated from one of aluminum, copper, silver, gold, or platinum.
10. The system according to claim 9 , wherein the plurality of metallic sections comprise one of rings or arcuate segments.