High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory
Non-volatile memory devices and logic devices are fabricated using processes compatible with high dielectric constant/metal gate (HK/MG) processes for increased cell density and larger scale integration. A doped oxide layer, such as a silicon-doped hafnium oxide (HfO 2 ) layer, is implemented as a ferroelectric dipole layer in a nonvolatile memory device.
1. A non-volatile memory, comprising:
a metal gate;
a floating gate;
an oxide layer coupled to the metal gate and the floating gate;
a tunneling oxide coupled to the floating gate; and
an interfacial layer coupled to the tunneling oxide,
wherein the floating gate is operable to be programmed or erased by a Fowler-Nordheim (FN) tunneling operation or the oxide layer is operable to be programmed or erased by an electric potential dipole switching operation, and
wherein the oxide layer comprises a hafnium oxide (HfO 2 ) layer.
2. The non-volatile memory of claim 1 , wherein the interfacial layer comprises silicon dioxide (SiO 2 ).
3. The non-volatile memory of claim 1 , wherein the HfO 2 layer of the oxide layer is a doped hafnium oxide (HfO 2 ) layer.
4. The non-volatile memory of claim 3 , wherein the doped HfO 2 layer comprises a silicon-doped HfO 2 layer.
5. The non-volatile memory of claim 1 , wherein the floating gate comprises titanium nitride (TiN).
6. The non-volatile memory of claim 1 , wherein the metal gate comprises an N-type metal gate.
7. The non-volatile memory of claim 1 , wherein the metal gate comprises a P-type metal gate.
8. The non-volatile memory of claim 1 ,
wherein the oxide layer is in between the metal gate and the floating gate, and
wherein the tunneling oxide is in between the floating gate and the interfacial layer.
9. The non-volatile memory of claim 1 , wherein the oxide layer and the tunneling oxide do not contact each other.
10. The non-volatile memory of claim 1 , further comprising a silicon fin, wherein the interfacial layer is in between the silicon fin and the tunneling oxide.
11. The non-volatile memory of claim 1 ,
wherein the floating gate comprises a first nitride cap,
wherein the non-volatile memory further comprises a second nitride cap between the metal gate and the oxide layer, and
wherein the oxide layer is in between the second nitride cap and the first nitride cap.
12. A non-volatile memory, comprising:
a metal gate;
a floating gate; and
an oxide layer coupled to the metal gate and the floating gate,
wherein the oxide layer is operable to be programmed or erased by an electric potential dipole switching operation.
13. The non-volatile memory of claim 12 , wherein the oxide layer comprises a hafnium oxide (HfO 2 ) layer.
14. The non-volatile memory of claim 12 , wherein the oxide layer comprises a ferroelectric dipole layer comprising a doped hafnium oxide (HfO 2 ) layer.
15. The non-volatile memory of claim 14 , wherein the doped HfO 2 layer comprises a silicon-doped HfO 2 layer.
16. The non-volatile memory of claim 12 , wherein the metal gate comprises an N-type metal gate.
17. The non-volatile memory of claim 12 , wherein the metal gate comprises a P-type metal gate.
18. A non-volatile memory, comprising:
a metal gate;
a block oxide layer coupled to the metal gate;
a floating gate coupled to the block oxide layer;
a tunneling oxide coupled to the floating gate; and
an interfacial layer coupled to the tunneling oxide,
wherein the floating gate is operable to be programmed or erased by a Fowler-Nordheim (FN) tunneling operation.
19. The non-volatile memory of claim 18 , wherein the tunneling oxide comprises hafnium oxide (HfO 2 ).
20. The non-volatile memory of claim 18 ,
wherein the block oxide layer is in between the metal gate and the floating gate, and
wherein the tunneling oxide is in between the floating gate and the interfacial layer.
21. The non-volatile memory of claim 18 , wherein the block oxide layer and the tunneling oxide do not contact each other.
22. The non-volatile memory of claim 18 , further comprising a silicon fin, wherein the interfacial layer is in between the silicon fin and the tunneling oxide.
23. The non-volatile memory of claim 18 , wherein the floating gate comprises titanium nitride (TiN).
24. The non-volatile memory of claim 18 ,
wherein the floating gate comprises a first nitride cap,
wherein the non-volatile memory further comprises a second nitride cap between the metal gate and the block oxide layer, and
wherein the block oxide layer is in between the second nitride cap and the first nitride cap.