Display device with glass frit sealing portion

1. A display device comprising:

a substrate;

a display disposed on the substrate;

an encapsulation portion disposed over the substrate; and

a sealing portion comprising a glass frit arranged between the substrate and the encapsulation portion, and surrounding the display,

wherein at least one power wire is disposed between the substrate and the encapsulation portion, contacts the sealing portion, and includes a plurality of openings, and wherein an insulating member is disposed in the plurality of openings, and

wherein a metal layer is disposed between the sealing portion and the at least one power wire.

2. The display device of claim 1 , wherein the metal layer covers the insulating member.

3. The display device of claim 2 , wherein the metal layer is disposed on a location corresponding to a location where the insulating member is disposed.

4. The display device of claim 1 , wherein the at least one power wire directly contacts at least one portion of the metal layer.

5. The display device of claim 1 , wherein the substrate comprises an active area where the display is disposed, a circuit area extended outside the active area, and a cell seal area extended outside the circuit area, wherein a circuit wire that is electrically connected to the active area is disposed in the circuit area, and wherein the at least one power wire is electrically connected to the circuit wire and receives external power.

6. The display device of claim 5 , wherein the at least one power wire passes a sealing area from the circuit area and is extended to an edge of the substrate.

7. The display device of claim 6 , wherein the at least one power wire is arranged on a different layer from the circuit wire, and

wherein at least some portions of the at least one power wire overlap the circuit wire.

8. The display device of claim 1 , wherein the display comprises:

at least one thin film transistor (TFT) comprising a semiconductor active layer, at least one gate electrode, at least one source electrode, and at least one drain electrode; and

an organic light-emitting display device (OLED) electrically connected to the at least one TFT and comprising a first electrode, an intermediate layer, and a second electrode, and

wherein the at least one power wire includes the same material as the at least one source electrode and the at least one drain electrode.

9. The display device of claim 8 , wherein the metal layer includes the same material as the first electrode.

10. The display device of claim 8 , wherein an insulating layer is disposed between the semiconductor active layer, the at least one gate electrode, the at least one source electrode, and the at least one drain electrode in order to insulate the same.

11. The display device of claim 10 , wherein at least one gate wire passes a lower portion of the sealing portion.

12. The display device of claim 11 , wherein the at least one gate wire is arranged on a different layer due to the insulating layer.

13. The display device of claim 1 , wherein the at least one power wire directly contacts at least some portions of the metal layer.

14. The display device of claim 1 , wherein a reinforcement member is further disposed outside the sealing portion.

15. A method of manufacturing a display device, the method comprising:

forming a substrate;

forming a display on the substrate;

covering the substrate with an encapsulation portion;

arranging a sealing portion comprising a glass frit between the substrate and the encapsulation portion, and surrounding the display; and

forming a plurality of openings in the at least one power wire, and forming an insulating member in the plurality of openings,

wherein at least one power wire is disposed between the substrate and the encapsulation portion, and contacts the sealing portion, and

wherein a metal layer is disposed between the sealing portion and the at least one power wire.

16. The method of manufacturing of claim 15 , wherein the at least one power wire directly contacts at least some portions of the metal layer.

17. The method of manufacturing of claim 15 further comprising forming a reinforcement member outside the sealing portion, wherein the reinforcement member comprises a sealant.

18. The method of manufacturing of claim 15 , wherein the display comprises:

at least one thin film transistor (TFT) comprising a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode; and

an organic light-emitting display device (OLED) electrically connected to the at least one TFT and comprising a first electrode, an intermediate layer, and a second electrode, and

wherein the at least one power wire includes the same material as the source electrode and the drain electrode.

19. A display device comprising:

a substrate;

a display disposed on the substrate, wherein the display comprises:

at least one thin film transistor (TFT) comprising a semiconductor active layer, at least one gate electrode, at least one source electrode, and at least one drain electrode; and

an organic light-emitting display device (OLED) electrically connected to the at least one TFT and comprising a first electrode, an intermediate layer, and a second electrode, and

wherein the at least one power wire includes the same material as the at least one source electrode and the at least one drain electrode;

an encapsulation portion disposed over the substrate; and

a sealing portion comprising a glass frit arranged between the substrate and the encapsulation portion, and surrounding the display,

wherein at least one power wire is disposed between the substrate and the encapsulation portion, and contacts the sealing portion, and

wherein a metal layer is disposed between the sealing portion and the at least one power wire.