Two-dimensional material containing electronic components
In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.
1. An electronic component, comprising:
a dielectric layer comprising a dielectric material selected from a group of dielectric materials consisting of an oxide, a nitride, a carbide and an oxynitride; and
a two-dimensional material containing structure over the dielectric layer;
wherein the dielectric material is doped with dopants within the dielectric material, the dopants comprising fixed charge carriers within the dielectric material changing the electric characteristic of the two-dimensional material containing structure.
2. The electronic component of claim 1 ,
wherein the dielectric structure is doped with p-type dopants.
3. The electronic component of claim 2 ,
wherein the p-type dopants are selected from a group of doping atoms consisting of:
nitrogen; and
cesium.
4. The electronic component of claim 1 ,
wherein the dielectric structure is doped with n-type dopants.
5. The electronic component of claim 4 ,
wherein the n-type dopants contain aluminum.
6. The electronic component of claim 1 ,
wherein the dielectric structure comprises a dielectric material selected from a group of dielectric materials consisting of:
silicon oxide;
silicon nitride;
siliconoxynitride;
silicon carbide;
aluminum oxide;
hafnium oxide and
zirconium oxide.
7. The electronic component of claim 1 ,
wherein the dielectric structure comprises a first dielectric portion being doped with n-type dopants and a second dielectric portion being doped with p-type dopants, wherein the first dielectric portion and the second dielectric portion are adjacent to each other.
8. The electronic component of claim 7 ,
being configured as a diode.
9. The electronic component of claim 1 ,
being configured as a transistor.
10. The electronic component of claim 9 ,
wherein the two-dimensional material containing structure forms a channel region of the transistor.
11. The electronic component of claim 1 ,
being configured as a planar electronic component.
12. The electronic component of claim 1 ,
being configured as a vertical electronic component.
13. The electronic component of claim 1 ,
wherein the two-dimensional material containing structure comprises graphene.
14. The electronic component of claim 1 ,
wherein the two-dimensional material containing structure comprises a metal chalcogenide.
15. The electronic component of claim 1 ,
wherein the two-dimensional material containing structure comprises a plurality of layers so that a band gap is provided between at least two layers of the plurality of layers.
16. An electronic component, comprising:
a dielectric layer comprising a dielectric material and dopants incorporated within the dielectric material; and
a two-dimensional material layer disposed over the dielectric layer, wherein the dopants comprise fixed charges in the dielectric material changing the electric characteristic of the two-dimensional material layer.
17. The electronic component of claim 16 ,
wherein the dielectric material is doped with p-type dopants.
18. The electronic component of claim 16 ,
wherein the dielectric material is doped with n-type dopants.
19. The electronic component of claim 16 ,
wherein the dielectric material is selected from a group of dielectric materials consisting of:
an oxide;
a nitride; and
an oxynitride.
20. The electronic component of claim 16 ,
wherein the dielectric structure material comprises a first dielectric portion being doped with n-type dopants and a second dielectric portion being doped with p-type dopants, wherein the first dielectric portion and the second dielectric portion are adjacent to each other.
21. The electronic component of claim 20 ,
being configured as a diode.
22. The electronic component of claim 16 ,
being configured as a transistor.
23. The electronic component of claim 16 ,
wherein the two-dimensional material containing structure forms a channel region of the transistor.
24. The electronic component of claim 16 ,
wherein the two-dimensional material containing structure comprises a plurality of layers so that a band gap is provided between at least two layers of the plurality of layers.
25. An electronic component, comprising:
a dielectric layer comprising dopants within a dielectric material of the dielectric layer; and
a graphene containing layer structure disposed over the dielectric layer;
wherein the dopants comprise fixed charges changing the electric characteristic of the graphene containing layer.
26. The electronic component of claim 25 ,
wherein the graphene containing layer structure comprises a plurality of graphene containing layers so that a band gap is provided between at least two graphene containing layers of the plurality of graphene containing layers.