Crystalline multilayer structure and semiconductor device
Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.
1. A crystalline multilayer structure comprising:
a metal layer containing a uniaxially oriented metal as a major component; and
a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component, wherein
the crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum, the crystalline oxide semiconductor has a corundum structure or β-galia structure and is uniaxially oriented in the film thickness direction.
2. The crystalline multilayer structure of claim 1 , wherein the crystalline oxide semiconductor contains gallium.
3. The crystalline multilayer structure of claim 1 , wherein the metal is platinum, gold, or palladium.
4. The crystalline multilayer structure of claim 1 , wherein the metal layer is a metal film disposed on a base substrate.
5. The crystalline multilayer structure of claim 4 , wherein the base substrate is a sapphire substrate, a Si substrate, a quartz substrate, an aluminum nitride substrate, a boron nitride substrate, a SiC substrate, a glass substrate, a SiGe substrate, or a plastic substrate.
6. A semiconductor device comprising the crystalline multilayer structure of claim 1 .
7. A semiconductor device comprising:
the crystalline multilayer structure of claim 1 ; and
an electrode disposed directly on the crystalline multilayer structure or with another layer therebetween.
8. A semiconductor device comprising:
a metal layer containing a uniaxially oriented metal as a major component; and
a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component, wherein
the crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum, the crystalline oxide semiconductor has a corundum structure or β-galia structure and is uniaxially oriented in the film thickness direction.
9. The semiconductor device of claim 6 , wherein the semiconductor device is a vertical device.
10. The semiconductor device of claim 6 , wherein the semiconductor device is a power device.
11. The semiconductor device of claim 6 , wherein the semiconductor device is a Schottky barrier diode (SBD), a metal semiconductor field-effect transistor (MESFET), a high-electron-mobility transistor (HEMT), a metal oxide semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction field-effect transistor (JFET), an insulated gate bipolar transistor (IGBT), or a light-emitting diode (LED).
12. The semiconductor device of claim 6 , wherein the semiconductor device is a Schottky barrier diode (SBD), a metal oxide semiconductor field-effect transistor (MOSFET), or a static induction transistor (SIT).
13. The semiconductor device of claim 6 , wherein the semiconductor device is a light-emitting diode comprising the crystalline multilayer structure and a light-emitting layer disposed directly on an upper surface or lower surface of the crystalline multilayer structure or with another layer therebetween.