IP Library › Granted Patent US 9,590,639
Granted Patent B2
US 9,590,639 · App. 14/573,813 · Granted Mar 7, 2017

Semiconductor device and control method

Inventors: Yukihito Kawabe (Kawasaki, JP); Michiharu Hara (Kawasaki, JP)
Assignee: FUJITSU LIMITED
H03L7/00G05F1/463G06F1/206H03L1/00H03L1/022H03L7/06
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Quick Facts
Patent No.
US 9,590,639
App. No.
14/573,813
Granted
Mar 7, 2017
Kind
B2
Abstract

A semiconductor device includes: a circuit configured to operate according to a clock; a temperature sensor configured to detect a temperature of the circuit; and a controller configured to control a frequency of the clock based on a temporal difference of power consumption of the circuit when the temperature detected by the temperature sensor exceeds a predetermined value.

Claims (20)

1. A semiconductor device comprising:

a circuit configured to operate according to a clock;

a temperature sensor configured to detect a temperature of the circuit; and

a controller configured to

control a frequency of the clock based on a temporal difference of power consumption of the circuit when the temperature detected by the temperature sensor exceeds a predetermined value,

calculate an exponential moving average of power from acquired power values based on a variation of the power value up to this time and an elapsed time until this time, and

control the frequency of the clock based on a temporal difference of the exponential moving average.

2. The semiconductor device according to claim 1 , wherein

the controller is further configured to control a power supply voltage along with the clock frequency and change the clock frequency and the power supply voltage based on temporal difference of the exponential moving average when the temperature detected by the temperature sensor exceeds a predetermined upper limit.

3. The semiconductor device according to claim 2 , wherein

the predetermined upper limit is set so that the predetermined upper limit becomes largest in a range not exceeding a temperature limit even when power consumption of the semiconductor device becomes maximum power consumption.

4. The semiconductor device according to claim 1 , wherein

the controller is further configured to change the clock frequency based on the variation of the power value when the temperature detected by the temperature sensor falls below a predetermined lower limit.

5. A control method of a clock frequency of a semiconductor device including circuits that operates according to a clock, the control method comprising:

detecting a temperature of the circuits;

monitoring power consumption of the circuits;

calculating a temporal difference of the monitored power consumption;

changing the clock frequency based on the temporal difference of the power consumption when the detected temperature exceeds a predetermined upper limit;

calculating an exponential moving average of power from acquired power values based on a variation of the power value up to this time and an elapsed time until this time; and

controlling the clock frequency based on a temporal difference of the exponential moving average.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2014
From: KAWABE, YUKIHITO; HARA, MICHIHARU
To: FUJITSU LIMITED
Reel/Frame 034563/0224 →
Priority Claims (1)
JP 2014-000912 · Jan 7, 2014 · national
Continuity (1)
Related Publication 20150194969A1 · Jul 9, 2015