Methods and apparatus for measuring a property of a substrate
In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced ( 2506 ) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used ( 2508 ) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked ( 2510 ) to at least partially recompose the measurement results according to the sample plan.
1. An inspection apparatus comprising:
a detector configured to detect scattered radiation arising from a substrate illuminated with radiation; and
at least one processor configured to:
produce a sampling plan defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans; and
control the inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different one of the plurality of sub-sampling plans for respective ones of the substrates.
2. The inspection apparatus of claim 1 , wherein the at least one processor is configured to produce the sampling plan constrained to a predetermined fixed number of measurement points.
3. The inspection apparatus of claim 1 , wherein the at least one processor is configured to produce the sampling plan that is configured to be distributed across a plurality of exposure fields of the plurality of substrates.
4. The inspection apparatus of claim 1 wherein t e at least one processor is further configured to:
receive measured processing data related to processing of at least one substrate using a processing apparatus;
determine variation of the processing data; and
produce the sampling plan based on the variation of the processing data.
5. The inspection apparatus of claim 1 , wherein the at least one processor is further configured to:
receive measured processing data related to processing of at least one substrate;
receive measurements of a property of at least one substrate;
determine a correlation of the measured processing data with the measurements f the property; and
produce the sampling plan based on the correlation of the processing data with the measured property.
6. The inspection apparatus of claim 5 , wherein the processing data comprises alignment data.
7. The inspection apparatus of claim 5 , wherein the processing data comprises leveling data.
8. The inspection apparatus of claim 1 , wherein the at least one processor is further configured to:
receive information on a characteristic affecting the substrates differently in two or more coordinates across a substrate; and
produce the sampling plan configured to be different in two or more coordinates across the substrate based on the received information on the characteristic.
9. The inspection apparatus of claim 8 , wherein the at least one processor is further configured to:
produce the sampling plan updated separately in two or more coordinates across the substrate based on the received information on a characteristic affecting the substrates differently in two or more coordinates across a substrate; and
control the inspection apparatus to perform a plurality of measurements of the property of at least one substrate using different updated sub-sampling plans for the respective at least one substrate.
10. The inspection apparatus of claim 8 , wherein the information on a characteristic affecting the substrates differently in two or more coordinates across a substrate comprises process setup information.
11. The inspection apparatus of claim 10 , wherein the process setup information comprises scanner process job information.
12. The inspection apparatus of claim 10 , wherein the process setup information comprises scanner actuator information.
13. The inspection apparatus of claim 8 , wherein the information on a characteristic affecting the substrates differently in two or more coordinates across a substrate comprises position-dependent variance across a substrate of the measured property.
14. The inspection apparatus of claim 13 , wherein the at least one processor is configured to produce the sampling plan using weighted least-squares estimation.
15. A lithography apparatus comprising:
an exposure system comprising:
an illuminator configured to condition a radiation beam;
a support structure configured to support a patterning device;
a substrate table configured to support a substrate;
a projection system configured to project a pattern imparted to the radiation beam by the patterning device onto the substrate; and
an inspection apparatus comprising:
a detector configured to detect scattered radiation arising from the substrate illuminated with radiation; and
at least one processor configured to:
produce a sampling plan defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans; and
control the inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using a different one of the plurality of sub-sampling plans for respective ones of the substrates;
control the exposure system to expose the plurality of substrates prior to controlling the inspection apparatus to perform the plurality of measurements of the property of the plurality of substrates; and
control the exposure system to process a subsequent at least one substrate with conditions based on the plurality of measurements.
16. A non-transitory computer program prod containing one or more sequences of machine-readable instructions for measuring a property of a substrate, the instructions being adapted to cause at least one processor to perform operations comprising:
illuminating a substrate with radiation;
detecting scattered radiation arising from illuminated substrate; and
producing a sampling plan defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans; and
performing a plurality of measurements of the property of a plurality of substrates using different one of the plurality of sub-sampling plans for respective ones of the substrates.