Crossed nanobeam structure for a low-threshold germanium laser
A crossed nanobeam structure for strain engineering in semiconductor devices is provided. For example, such a structure can be used for a low-threshold germanium laser. While the photonic crystal nanobeam enables light confinement in a subwavelength volume with small optical loss, another crossing nanobeam induces high tensile strain in the small region where the optical mode is tightly confined. As maintaining a small optical loss and a high tensile strain reduces the required pumping for achieving net optical gain beyond cavity losses, this technique can be used to develop an extremely low-threshold Ge laser source. Moreover, the structure can be easily integrated into electronic and photonic circuits.
1. A semiconductor structure comprising:
a semiconductor member configured as a first beam having an active region sandwiched between two side regions along its length; and
two stress members affixed to opposite lateral surfaces of the active region;
wherein the stress members are configured to provide mechanical stress to the active region, whereby the active region as a whole is subject to mechanical strain;
wherein the stress members are configured to form a second beam perpendicular to the first beam.
2. The structure of claim 1 , wherein the active region comprises a semiconductor having a direct conduction band valley CB dir and an indirect conduction band valley CB ind , wherein CB dir is higher in energy than CB ind by an energy difference of 250 meV or less with no applied strain, and wherein the energy difference decreases with mechanical tensile strain.
3. The structure of claim 2 , wherein the semiconductor is germanium.
4. The structure of claim 1 , wherein the mechanical strain alters energy bandgaps in the semiconductor member such that a band profile of a double heterostructure is formed along the length of the semiconductor member.
5. The structure of claim 1 , wherein the active region comprises a semiconductor selected from the group consisting of: III-V semiconductors, germanium, germanium-tin, silicon, silicon-germanium, and silicon-germanium-tin.
6. The structure of claim 1 , wherein the stress members comprise material selected from the group consisting of: silicon nitride, dielectrics and piezo-electric materials.
7. The structure of claim 1 , wherein the mechanical strain is transverse with respect to an axis of the first beam.
8. The structure of claim 1 , wherein the mechanical strain is tensile strain.
9. The structure of claim 1 , wherein the active region is suspended above a substrate.
10. The structure of claim 1 , wherein the active region is affixed to a substrate.
11. The structure of claim 10 , wherein the active region is affixed to the substrate by stiction.
12. A semiconductor laser including the structure of claim 1 , wherein the side regions include photonic crystal reflectors.
13. An optoelectronic semiconductor device including the structure of claim 1 , wherein the optoelectronic semiconductor device is selected from the group consisting of: lasers, light emitting diodes, modulators, detectors and passive optical filters.