Photo-induced phase transfer of luminescent quantum dots
A method for the photo-mediated phase transfer of inorganic nanocrystals, such as luminescent quantum dots, QDs, is provided. Irradiation, specifically UV excitation (λ ex <400 nm), promotes the in-situ ligand exchange of hydrophobic quantum dots with hydrophilic ligands and their facile transfer to polar solvents and buffer media. The technique enables transfer of quantum dots and other nanocrystal materials from hydrophobic to polar and hydrophilic solutions.
1. A method for preparing a composition comprising a polar solvent comprising a nanoparticle, the method comprising:
irradiating a biphasic mixture, the biphasic mixture comprising a polar solvent and a non-polar solvent, the polar solvent and the non-polar solvent being immiscible in each other;
wherein, prior to irradiation, the polar solvent comprises a hydrophilic surfactant, the hydrophilic surfactant comprising a moiety reactive with a surface of the nanoparticle or a moiety that becomes reactive with a surface of the nanoparticle during irradiation of the biphasic mixture;
wherein, prior to irradiation, the non-polar solvent comprises the nanoparticle; and
wherein irradiating the biphasic mixture induces a reaction between the nanoparticle and the reactive moiety of the hydrophilic surfactant, which reaction mediates transfer of the nanoparticle from the nonpolar solvent to the polar solvent.
2. The method of claim 1 wherein the nanoparticle comprises a core and a hydrophobic surfactant prior to irradiation of the biphasic mixture.
3. The method of claim 2 wherein the core comprises a nanocrystal.
4. The method of claim 2 wherein the core comprises a semiconductor nanocrystal.
5. The method of claim 2 wherein the core comprises a metal selected from the group consisting of gold, silver, platinum, copper, nickel, and alloys thereof.
6. The method of claim 2 wherein the core comprises a semiconductor selected from the group consisting of CdSe, CdS, CdSeS, CdTe, InAs, InP, GaAs, PbSe, PbS, HgSe, and HgTe.
7. The method of claim 2 wherein the core comprises a semiconductor selected from the group consisting of AgInS 2 , CuInS 2 , CdSeTe, ZnCdSe, and ZnCdTe.
8. The method of claim 2 wherein the core comprises a shell material selected from the group consisting of ZnS, ZnSe, CdS, ZnSeS, CdS, CdSZn.
9. The method of claim 2 wherein the hydrophobic surfactant is selected from the group consisting of a long alkyl chain phosphine, a long alkyl chain phosphine oxide, a long alkyl chain amine, a long alkyl chain carboxylic acid, a long alkenyl chain carboxylic acid, and a long chain alkenyl compound.
10. The method of claim 1 wherein the hydrophilic surfactant comprises the following general structure (I):
wherein:
n 1 , n 2 , and n 3 are each independently integers having a value between 1 and 20;
and X h comprises a functional group.
11. The method of claim 1 wherein the hydrophilic surfactant comprises the following structure (II):
12. The method of claim 1 wherein the hydrophilic surfactant comprises the following structure (III):
13. The method of claim 1 wherein the hydrophilic surfactant comprises the following structure (IV):
14. The method of claim 1 wherein the hydrophilic surfactant comprises the following structure (V):
15. The method of claim 1 wherein the hydrophilic surfactant comprises the following general structure (VI):
wherein:
n 1 has a value between 1 and 20;
n 4 has a value between 1 and 20; and
ZW is a zwitterionic moiety.
16. The method of claim 15 wherein the n 4 and the zwitterionic moiety combined has the following structure:
17. The method of claim 1 wherein the hydrophilic surfactant comprises the following structure (VI):
18. The method of claim 1 wherein the biphasic mixture is irradiated with UV light having a wavelength, λ ex , between 250 nanometers and 400 nanometers.