Method and materials for warpage thermal and interconnect solutions
Embodiments describe a semiconductor package that includes a substrate, a die bonded to the substrate, and a solder paste overmold layer formed over a top surface of the die. In an embodiment, the solder paste comprises a high-melting point metal, a solder matrix, intermetallic compounds and a polymer. The overmold layer has a high elastic modulus, a coefficient of thermal expansion similar to the substrate, and reduces the warpage of the package. In an embodiment, interconnects of a semiconductor package are formed with a no-slump solder paste that includes vents. Vents may be formed through a conductive network formed by the high-melting point metal, solder matrix and intermetallic compounds. In an embodiment, vents provide a path through the interconnect that allows for moisture outgassing. In an embodiment, a mold layer may be mechanically anchored to the interconnects by the vents, thereby providing improved mechanical continuity to the mold layer.
1. A semiconductor package comprising:
a substrate;
a die bonded to the substrate; and
a solder paste overmold layer formed over a top surface of the die, wherein the solder paste comprises a conductive network formed by particles of a high-melting point metal and a solder matrix, wherein the particles of the high-melting point metal are surrounded by an intermetallic compound shell formed from the solder-matrix material and the high-melting point metal, and wherein the solder matrix forms conductive bridges between the high-melting point metal particles.
2. The semiconductor package of claim 1 , wherein the solder paste further comprises a polymer.
3. The semiconductor package of claim 1 , wherein an intermetallic layer is formed around an outer portion of the high-melting point metal.
4. The semiconductor package of claim 1 , wherein the high-melting point metal is copper and the solder matrix is SnBi.
5. The semiconductor package of claim 1 , wherein a thickness of the solder paste overmold layer over the die is 100 μm or less.
6. The semiconductor package of claim 1 , wherein the die is bonded to the substrate by a plurality of solder bumps and further comprises an underfill material between the solder bumps.
7. The semiconductor package of claim 1 , further comprising a plurality of interconnects formed around a peripheral region of the substrate, wherein the interconnects are formed from the solder paste and have an aspect ratio of 2:1 or greater.
8. A semiconductor package comprising:
a substrate;
a mold layer formed over a top surface of the substrate; and
one or more interconnects formed through the mold layer, wherein the interconnects are formed from a no-slump solder paste and comprise a conductive network having a plurality of vents formed through the conductive network within the no-slump solder paste, wherein the vents have an average diameter that is smaller than an average particle size of the mold layer, wherein the average particle size of the mold layer is 30 μm or larger.
9. The semiconductor package of claim 8 , wherein the conductive network comprises a high melting point metal, a solder matrix, and intermetallic compounds.
10. The semiconductor package of claim 9 , wherein the high melting point metal is copper and the solder matrix is a SnBi solder.