Organic light emitting display device
Disclosed herein is an OLED (Organic Light Emitting Display) device. A switching thin-film transistor configured to be an oxide semiconductor thin-film transistor is disposed in a first pixel. A second pixel is adjacent to the first pixel in the direction in which data lines are extended. A switching thin-film transistor configured to be an LTPS (Low Temperature Poly-Silicon) thin-film transistor is disposed in the second pixel. The switching thin-film transistor of the first pixel and the switching thin-film transistor of the second pixel are connected to the same gate line. A pixel and another pixel adjacent to the pixel connected to a gate line in common, so that it is possible to provide an OLED device with high aperture ratio and high resolution.
1. An organic light-emitting display (OLED) device, comprising:
a switching thin-film transistor;
a driving thin-film transistor connected to the switching thin thin-film transistor;
a first storage capacitor having one electrode being an active layer of the driving thin-film transistor; and
a second storage capacitor having one electrode being one of a source electrode and a drain electrode of the driving thin-film transistor,
wherein the first storage capacitor and the second storage capacitor overlap each other, and
wherein the switching thin-film transistor is an oxide semiconductor thin-film transistor and the driving thin-film transistor is a low temperature poly-silicon (LTPS) thin-film transistor,
wherein both the other electrode of the first storage capacitor and the other electrode of the second storage capacitor are an active layer of the switching thin-film transistor.
2. The device of claim 1 , wherein
a gate insulation layer covers the active layer of the driving thin-film transistor,
a gate electrode of the switching thin-film transistor and a gate electrode of the driving thin-film transistor are on the gate insulation layer,
an interlayer insulation layer covers the gate electrode of the switching thin-film transistor and the gate electrode of the driving thin-film transistor,
the active layer of the switching thin-film transistor overlaps the active layer of the driving thin-film transistor on the interlayer insulation layer,
an etch stopper covers the active layer of the switching thin-film transistor, and
one of the source electrode and the drain electrode of the driving thin-film transistor overlaps the active layer of the switching thin-film transistor on the etch stopper.
3. The device of claim 1 , further comprising:
a third storage capacitor overlapped with the first storage capacitor and the second storage capacitor and having a first electrode and a second electrode,
wherein the first electrode of the third storage capacitor is one of the source electrode and the drain electrode of the driving thin-film transistor, and
the second electrode of the third storage capacitor is a metal layer electrically connected to one of a source electrode and a drain electrode of the switching thin-film transistor and on the switching thin-film transistor and the driving thin-film transistor.
4. The device of claim 1 , further comprising:
a fourth storage capacitor overlapped with the first storage capacitor and the second storage capacitor and having a first electrode and a second electrode,
wherein the first electrode of the fourth storage capacitor is the active layer of the driving thin-film transistor, and
the second electrode of the fourth storage capacitor is a light-blocking layer under the switching thin-film transistor and the driving thin-film transistor and configured to block light directed toward the active layer of the switching thin-film transistor and the active layer of the driving thin-film transistor.
5. The device of claim 1 , wherein
the driving thin-film transistor has a coplanar structure in which the active layer, a gate electrode, and the source electrode and the drain electrode are stacked in order, and
the switching thin-film transistor has a bottom gate structure in which a gate electrode, an active layer, and a source electrode and a drain electrode are stacked in order.
6. An organic light-emitting display (OLED) device, comprising:
a switching thin-film transistor;
a driving thin-film transistor connected to the switching thin thin-film transistor;
a first storage capacitor having one electrode being an active layer of the driving thin-film transistor; and
a second storage capacitor having one electrode being one of a source electrode and a drain electrode of the driving thin-film transistor,
wherein the first storage capacitor and the second storage capacitor overlap each other, and
wherein the switching thin-film transistor is an oxide semiconductor thin-film transistor and the driving thin-film transistor is a low temperature poly-silicon (LTPS) thin-film transistor,
wherein the other electrode of the first storage capacitor is a gate electrode of the driving thin-film transistor, and
the other electrode of the second storage capacitor is an active layer of the switching thin-film transistor.
7. The device of claim 6 , wherein
a gate insulation layer covers the active layer of the driving thin-film transistor,
a gate electrode of the switching thin-film transistor and the gate electrode of the driving thin-film transistor are on the gate insulation layer,
the gate electrode of the driving thin-film transistor overlaps the active layer of the driving thin-film transistor,
an interlayer insulation layer covers the gate electrode of the switching thin-film transistor and the gate electrode of the driving thin-film transistor,
an active layer of the switching thin-film transistor is on the interlayer insulation layer,
an etch stopper covers the active layer of the switching thin-film transistor, and
one of the source electrode and the drain electrode of the driving thin-film transistor overlaps the active layer of the switching thin-film transistor on the etch stopper.
8. An organic light-emitting display (OLED) device, comprising:
a switching thin-film transistor;
a driving thin-film transistor connected to the switching thin thin-film transistor;
a first storage capacitor having one electrode being an active layer of the driving thin-film transistor; and
a second storage capacitor having one electrode being one of a source electrode and a drain electrode of the driving thin-film transistor,
wherein the first storage capacitor and the second storage capacitor overlap each other, and
wherein the switching thin-film transistor is a low temperature poly-silicon (LTPS) thin-film transistor and the driving thin-film transistor is an oxide semiconductor thin-film transistor,
wherein the switching thin-film transistor has a coplanar structure in which an active layer, a gate electrode, and a source electrode and a drain electrode are stacked in order, and
the driving thin-film transistor has a bottom gate structure in which a gate electrode, the active layer, and the source electrode and the drain electrode are stacked in order.
9. The device of claim 8 , wherein
a gate insulation layer covers an active layer of the switching thin-film transistor,
a gate electrode of the switching thin-film transistor and a gate electrode of the driving thin-film transistor are on the gate insulation layer,
an interlayer insulation layer covers the gate electrode of the switching thin-film transistor and the gate electrode of the driving thin-film transistor,
the active layer of the driving thin-film transistor is disposed to overlap the gate electrode of the driving thin-film transistor on the interlayer insulation layer,
an etch stopper covers the active layer of the driving thin-film transistor, and
a metal layer is electrically connected to one of a source electrode and a drain electrode of the switching thin-film transistor and to overlap one of the source electrode and the drain electrode of the driving thin-film transistor.