Mg—Si system thermoelectric conversion material, method for producing same, sintered body for thermoelectric conversion, thermoelectric conversion element, and thermoelectric conversion module
Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.
1. An Mg—Si system thermoelectric conversion material expressed by: a chemical composition formula: Mg 66.7-a Si 33.3-b Sb x Zn y A z
(A represents one or more types of elements selected from a group consisting of Al, Bi, P, Ga, As, In, Ag, Cu, Au, Ni, Fe, Mn, Co, Ta, Nd, Nb, and Pb, x, y, and z satisfy conditions of 0.1≦x≦3.0, 0.1≦y≦3.0, 0≦z≦3.0, and 0.2≦x+y+z≦5.0, a and b are positive numbers and satisfy a condition of a+b=x+y+z.).
2. A sintered body made by sintering the Mg—Si system thermoelectric conversion material according to claim 1 .
3. A thermoelectric conversion element comprising:
a thermoelectric conversion part made of the sintered body according to claim 2 , and a first electrode and a second electrode provided in the thermoelectric conversion part.
4. A thermoelectric conversion module comprising:
the thermoelectric conversion element according to claim 3 .
5. A method for producing an Mg—Si system thermoelectric conversion material comprising:
a step of heating and melting a starting material composition containing Mg, Si, Sb, and Zn.
6. The method for producing an Mg—Si system thermoelectric conversion material according to claim 5 ,
wherein each of contents of Sb and Zn in the starting material composition are from 0.1 to 3.0 at % by atomic weight ratio, and a total of the contents of elements other than Mg and Si is from 0.2 to 5.0 at % by atomic weight ratio.
7. An Mg—Si system thermoelectric conversion material produced by the method for producing an Mg—Si system thermoelectric conversion material according to claim 5 .
8. An Mg—Si system thermoelectric conversion material produced by the method for producing an Mg—Si system thermoelectric conversion material according to claim 6 .
9. A method of thermoelectric conversion, the method comprising:
using the sintered body according to claim 2 .