Method of manufacturing a magnetic memory device
A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.
1. A method of manufacturing a magnetic memory device, said method comprising:
forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, at least one of the lower magnetic layer and the upper magnetic layer comprises boron;
forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, the magnetic tunnel junction pattern including a side surface;
forming a boron-absorption layer covering the side surface of the magnetic tunnel junction pattern; and
performing a heat treatment process to cause boron included in the at least one of the upper and lower magnetic layers to be absorbed by the boron-absorption layer,
wherein the heat treatment process is performed in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen, wherein the heat treatment process comprises a first heat treatment process performed in a gaseous atmosphere including hydrogen, and a second heat treatment process performed in a gaseous atmosphere including oxygen.
2. A method of manufacturing a magnetic memory device, said method comprising:
forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, at least one of the lower magnetic layer and the upper magnetic layer comprises boron;
forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, the magnetic tunnel junction pattern including a side surface;
forming a boron-absorption layer covering the side surface of the magnetic tunnel junction pattern; and
performing a heat treatment process to cause boron included in the at least one of the upper and lower magnetic layers to be absorbed by the boron-absorption layer,
wherein the heat treatment process is performed in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen, wherein the heat treatment process comprises a first heat treatment process performed in a gaseous atmosphere including hydrogen, and undertaken second heat treatment process performed in a gaseous atmosphere including oxygen and nitrogen.
3. A method of manufacturing a magnetic memory device, the method comprising:
forming a stacked structure including a lower magnetic layer, a first tunnel barrier layer, an intermediate magnetic layer, a second tunnel barrier layer, and an upper magnetic layer, at least one of the lower magnetic layer, the intermediate magnetic layer and the upper magnetic layer comprises boron;
forming a magnetic tunnel junction pattern by etching the stacked structure, the magnetic tunnel junction pattern including a side surface;
forming a boron-absorption layer covering the side surface of the magnetic tunnel junction pattern; and
performing a heat treatment process such that at least a portion of each of the upper, intermediate, and lower magnetic layers is crystallized and such that boron included in the at least one of the upper, intermediate, and lower magnetic layers is substantially absorbed by the boron-absorption layer,
wherein the heat treatment process includes a first process performed in a gaseous atmosphere including hydrogen, and a second process performed in a gaseous atmosphere including oxygen.
4. The method of claim 3 , wherein the heat treatment process is performed first in a gaseous atmosphere including hydrogen, and is subsequently be performed in a gaseous atmosphere including both oxygen and nitrogen.
5. The method of claim 3 , wherein the heat treatment process is performed in a heat-treatment chamber under the influence of a magnetic field having a direction that is perpendicular to the substrate.