Synthesis and transfer of metal dichalcogenide layers on diverse surfaces
Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
1. A method for producing a metal dichalcogenide layer on a transfer substrate, comprising:
seeding aromatic molecules on a surface of a growth substrate;
growing a layer of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules; and
contacting the seeded aromatic molecules with a solvent that dissolves the seeded aromatic molecules to release the metal dichalcogenide from the growth substrate, wherein the growth substrate remains intact as the seeded aromatic molecules are dissolved to release the metal dichalcogenide.
2. The method of claim 1 , further comprising adhering a transfer medium to the metal dichalcogenide layer before the metal dichalcogenide layer is released from the growth substrate.
3. The method of claim 2 , where the transfer medium includes a polymer selected from polydimethylsiloxane (PDMS) and poly(methyl methacrylate) (PMMA).
4. The method of claim 1 , further comprising, after the metal dichalcogenide layer is released from the growth substrate, applying the metal dichalcogenide layer to a target substrate.
5. The method of claim 4 , wherein the target substrate comprises a composition selected from quartz, sapphire and silica.
6. The method of claim 1 , wherein the metal dichalcogenide has a composition represented by the formula, MX 2 , where M includes a metal selected from molybdenum (Mo) and tungsten (W), and where X is a chalcogen selected from sulfur (S), selenium (Se) and tellurium (Te).
7. The method of claim 6 , wherein X is sulfur.
8. The method of claim 7 , wherein M is molybdenum.
9. The method of claim 8 , wherein the MoS 2 layer is grown at a temperature of about 650° C.
10. The method of claim 7 , wherein M is tungsten.
11. The method of claim 10 , wherein the WS 2 layer is grown at a temperature of about 800° C.
12. The method of claim 6 , wherein the sulfur is evaporated into a vapor phase and carried with argon gas flow in the chemical vapor deposition.
13. The method of claim 12 , wherein the metal is supplied as MO 3 in the chemical vapor deposition.
14. The method of claim 1 , wherein the chemical vapor deposition is performed at ambient pressure.
15. The method of claim 1 , wherein the aromatic molecules are seeded in de-ionized water.
16. The method of claim 1 , wherein the aromatic molecules are selected from reduced graphene oxide (r-GO), perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA), and perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS).
17. The method of claim 1 , wherein the metal dichalcogenide layer is a monolayer.
18. The method of claim 1 , wherein the growth substrate comprises SiO 2 /Si.
19. A method for producing a metal dichalcogenide layer on a transfer substrate, comprising:
seeding aromatic molecules on a surface of a growth substrate;
growing a layer of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules; and
contacting the seeded aromatic molecules with a solvent that dissolves the seeded aromatic molecules to release the metal dichalcogenide from the growth substrate, wherein the solvent consists essentially of deionized water.