IP Library › Granted Patent US 9,641,069
Granted Patent B1
US 9,641,069 · App. 15/135,581 · Granted May 2, 2017

Charge pump circuit

Inventors: Zhirong Chen (Guangdong, CN); Wing Chun Chan (Hong Kong, HK); Wai Kwong Lee (Hong Kong, HK); Wai Sum Choi (Hong Kong, HK)
Assignee: SOLOMON SYSTECH (SHENZHEN) LIMITED
H02M3/07
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Quick Facts
Patent No.
US 9,641,069
App. No.
15/135,581
Granted
May 2, 2017
Kind
B1
Abstract

A charge pump circuit includes a plurality of stages. Each stage of the charge pump circuit includes: a first transistor, drain of the first transistor being output of the stage, source of the first transistor being input of the stage; a second transistor, gate of the second transistor being connected to source of the first transistor, drain of the second transistor being connected to drain of the first transistor, source of the second transistor being connected to gate of the first transistor, body of the second transistor being connected to body of the first transistor; and a third transistor, gate of the third transistor being connected to drain of the first transistor, drain of the third transistor being connected to source of the first transistor, source of the third transistor being connected to body of the first transistor and body of the third transistor.

Claims (19)

1. A charge pump circuit comprising a plurality of stages, each stage of the charge pump circuit comprising:

a first transistor, one of source and drain of the first transistor being output of the stage, the other one of source and drain of the first transistor being input of the stage;

a second transistor, gate of the second transistor being connected to source of the first transistor, one of source and drain of the second transistor being connected to drain of the first transistor, the other one of source and drain of the second transistor being connected to gate of the first transistor, body of the second transistor being connected to body of the first transistor;

a third transistor, gate of the third transistor being connected to drain of the first transistor, one of the source and drain of the third transistor being connected to source of the first transistor, the other one of source and drain of the third transistor being connected to body of the first transistor and body of the third transistor;

a first capacitor having a first end connecting to gate of the first transistor and a second end being a driving end of the stage;

a second capacitor connecting the output of the stage to a predetermined signal end; and

a third capacitor connecting body of the first transistor to drain of the first transistor;

wherein the plurality of stages comprises a first stage, a plurality of intermediate stages and a last stage;

the driving end of each odd stage of the plurality of intermediate stages is driven by the output of a predetermined stage; and

the driving end of each even stage of the plurality of intermediate stages is driven by the output of a stage next to the predetermined stage.

2. The charge pump circuit of claim 1 , wherein the predetermined stage and the stage next to the predetermined stage are both from the plurality of intermediate stages.

3. The charge pump circuit of claim 1 , wherein the first, second and third transistors are PMOS transistors.

4. The charge pump circuit of claim 1 , wherein the first, second and third transistors are NMOS transistors.

5. The charge pump circuit of claim 1 , wherein the third capacitor has a capacitance over 10 times of parasitic capacitance on body of the first transistor.

6. The charge pump circuit of claim 1 , wherein the predetermined stage is an odd stage, and the stage next to the predetermined stage is an even stage.

7. The charge pump circuit of claim 1 , wherein the predetermined stage is an even stage, and the stage next to the predetermined stage is an odd stage.

8. The charge pump circuit of claim 1 , wherein the predetermined signal end connecting to the second capacitor of each of the first stage and odd stages of the plurality of intermediate stages connects to a first clock, the predetermined signal end connecting to the second capacitor of each of even stages of the plurality of intermediate stages connects to a second clock, and the predetermined signal end connecting to the second capacitor of the last stage connects to a ground.

9. The charge pump circuit of claim 8 , wherein the first clock and the second clock are respectively driven by a same system supply voltage.

10. The charge pump circuit of claim 9 , wherein the output of the predetermined stage and the output of the stage next to the predetermined stage are both greater than the system supply voltage.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 25, 2016
From: CHEN, ZHIRONG; CHAN, WING CHUN; LEE, WAI KWONG; CHOI, WAI SUM
To: SOLOMON SYSTECH (SHENZHEN) LIMITED
Reel/Frame 038363/0357 →
Priority Claims (1)
CN 2016 1 0243415 · Apr 18, 2016 · national