Acoustic wave device
An acoustic wave device includes: a piezoelectric substrate; and an IDT formed on the piezoelectric substrate, wherein an anisotropy coefficient is positive, an overlap region where electrode fingers of the IDT overlap each other includes a center region and an edge region, the electrode fingers in the center and edge regions are continuously formed, the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and an angle between the width direction in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction in the edge region and the crystal axis orientation.
1. An acoustic wave device comprising:
a piezoelectric substrate; and
an Interdigital Transducer (IDT) formed on the piezoelectric substrate, including electrode fingers, and exciting an acoustic wave,
wherein an anisotropy coefficient is positive,
an overlap region where the electrode fingers of the IDT overlap each other includes a center region located in a center of the overlap region in an extension direction of the electrode finger and an edge region located at an edge of the overlap region in the extension direction,
the electrode finger in the center region and the electrode finger in the edge region are continuously formed,
the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is greater than a pitch in a width direction of the electrode finger in the center region, and
an angle between the width direction of the electrode finger in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction of the electrode finger in the edge region and the crystal axis orientation.
2. The acoustic wave device according to claim 1 , wherein
a boundary between the edge region and the center region is parallel to the width direction of the electrode finger in the edge region.
3. The acoustic wave device according to claim 1 , wherein
the width direction of the electrode finger in the center region is parallel to the crystal axis orientation.
4. The acoustic wave device according to claim 1 , wherein
the width directions of the electrode fingers in the edge regions located at both sides of the center region are parallel to each other.
5. The acoustic wave device according to claim 1 , wherein
the IDT includes a bus bar, and
an extension direction of the bus bar is parallel to the width direction of the electrode finger in the edge region.
6. The acoustic wave device according to claim 1 , wherein
a duty ratio of the electrode finger in the edge region is equal to a duty ratio of the electrode finger in the center region.
7. The acoustic wave device according to claim 1 , wherein
a duty ratio of the electrode finger in the edge region is greater than a duty ratio of the electrode finger in the center region.
8. The acoustic wave device according to claim 1 , wherein
the piezoelectric substrate is a rotated Y-cut X-propagation lithium niobate substrate, and
the crystal axis orientation is an X-axis orientation of the piezoelectric substrate.
9. The acoustic wave device according to claim 8 , further comprising:
a silicon oxide film formed on the piezoelectric substrate to cover the IDT.
10. The acoustic wave device according to claim 1 , further comprising:
a filter including the IDT.
11. An acoustic wave device comprising:
a piezoelectric substrate; and
an Interdigital Transducer (IDT) formed on the piezoelectric substrate, including electrode fingers, and exciting an acoustic wave,
wherein an anisotropy coefficient is negative,
an overlap region where the electrode fingers of the IDT overlap each other includes a center region located in a center of the overlap region in an extension direction of the electrode finger and edge regions located at both sides of the center region in the extension direction,
the electrode finger in the center region and the electrode finger in the edge region are continuously formed,
the electrode finger in the edge region is inclined with respect to the electrode finger in the center region so that a pitch in a width direction of the electrode finger in the edge region is less than a pitch in the width direction of the electrode finger in the center region,
an angle between the width direction of the electrode finger in the center region and a crystal axis orientation of the piezoelectric substrate is less than an angle between the width direction of the electrode finger in the edge region and the crystal axis orientation, and
the width directions of the electrode fingers in the edge regions located at both sides of the center region are parallel to each other.
12. The acoustic wave device according to claim 11 , wherein
a boundary between the edge region and the center region is parallel to the width direction of the electrode finger in the center region.
13. The acoustic wave device according to claim 11 , wherein
a duty ratio of the electrode finger in the edge region is less than a duty ratio of the electrode finger in the center region.
14. The acoustic wave device according to claim 11 , further comprising:
a filter including the IDT.