TFT substrate and method for manufacturing the same

1. A method for manufacturing TFT substrate, wherein the method comprises the steps of:

providing a substrate;

forming a TFT structure above the substrate;

further forming a color resist layer above the substrate, and forming a first opening area in the color resist layer at a location corresponding to the TFT structure;

forming a first black matrix in the first opening area such that the TFT structure is covered by the first black matrix; and

forming a pixel electrode above the color resist layer and the first black matrix, and the pixel electrode being electrically coupled to the TFT structure through the first black matrix;

wherein the step of forming the TFT structure above the substrate further comprises:

forming an electrode capacitor above the substrate, wherein a second opening area in the color resist layer is formed at a location corresponding to the capacitor capacitance, and the electrode capacitor comprises a first capacitor electrode and a second capacitor electrode;

the step of forming the first black matrix in the first opening area further comprises:

forming a second black matrix in the second opening area such that the electrode capacitor is covered by the second black matrix;

the step of forming the TFT structure above the substrate further comprises:

forming a gate electrode, and forming a scan line and the first capacitor electrode disposed at a layer the same as the gate electrode;

sequentially forming a first insulating layer and an active layer above the gate electrode, the scan line and the first capacitor electrode being further covered by the first insulating layer, and the scan line and the first capacitor electrode being not covered by the active layer;

forming a source electrode and a drain electrode above the active layer, and forming the second capacitor electrode, which is disposed at a layer the same as the source electrode and the drain electrode, above the first capacitor electrode; and

forming a second insulating layer above the source electrode, the drain electrode and the second capacitor electrode, wherein the color resist layer, the first black matrix and the second black matrix are formed above the second insulating layer, and the pixel electrode is electrically coupled to one of the source electrode and the drain electrode through the first black matrix and the second insulating layer, and is further electrically coupled to the second capacitor electrode through the second black matrix and the second insulating layer;

the method further comprises:

forming an insulating protection layer between the pixel electrode and the first black matrix, the second black matrix and the color resist layer;

the step of forming the first black matrix in the first opening area further comprises:

forming a first contact hole in the first black matrix and the second insulating layer at a location corresponding to one of the source electrode and the drain electrode, and forming a second contact hole in the second black matrix and the second insulating layer at a location corresponding to the second capacitor electrode;

the step of forming the insulating protection layer between the pixel electrode and the first black matrix, the second black matrix and the color resist layer further comprises:

forming the insulating protection layer in the first contact hole and the second contact hole; and

forming a third contact hole and a fourth contact hole in the insulating protection layer in the first contact hole and the second contact hole, respectively, wherein the pixel electrode is electrically coupled to one of the source electrode and the drain electrode through the third contact hole, and is electrically coupled to the second capacitor electrode through the fourth contact hole

wherein the color resist layer comprises a red, a green and a blue material, and the black matrix is composed of black resin material.

2. A method for manufacturing TFT substrate, wherein the method comprises the steps of:

providing a substrate;

forming a TFT structure above the substrate;

further forming a color resist layer above the substrate, and forming a first opening area in the color resist layer at a location corresponding to the TFT structure;

forming a first black matrix in the first opening area such that the TFT structure is covered by the first black matrix; and

forming a pixel electrode above the color resist layer and the first black matrix, and the pixel electrode being electrically coupled to the TFT structure through the first black matrix,

wherein the step of forming the TFT structure above the substrate further comprises:

forming an electrode capacitor above the substrate, wherein a second opening area in the color resist layer is formed at a location corresponding to the capacitor capacitance, and the electrode capacitor comprises a first capacitor electrode and a second capacitor electrode;

the step of forming the first black matrix in the first opening area further comprises:

forming a second black matrix in the second opening area such that the electrode capacitor is covered by the second black matrix;

the step of forming the TFT structure above the substrate further comprises:

forming a gate electrode, and forming a scan line and the first capacitor electrode disposed at a layer the same as the gate electrode;

sequentially forming a first insulating layer and an active layer above the gate electrode, the scan line and the first capacitor electrode being further covered by the first insulating layer, and the scan line and the first capacitor electrode being not covered by the active layer;

forming a source electrode and a drain electrode above the active layer, and forming the second capacitor electrode, which is disposed at a layer the same as the source electrode and the drain electrode, above the first capacitor electrode; and

forming a second insulating layer above the source electrode, the drain electrode and the second capacitor electrode, wherein the color resist layer, the first black matrix and the second black matrix are formed above the second insulating layer, and the pixel electrode is electrically coupled to one of the source electrode and the drain electrode through the first black matrix and the second insulating layer, and is further electrically coupled to the second capacitor electrode through the second black matrix and the second insulating layer;

the method further comprises:

forming an insulating protection layer between the pixel electrode and the first black matrix, the second black matrix and the color resist layer;

the step of forming the first black matrix in the first opening area further comprises:

forming a first contact hole in the first black matrix and the second insulating layer at a location corresponding to one of the source electrode and the drain electrode, and forming a second contact hole in the second black matrix and the second insulating layer at a location corresponding to the second capacitor electrode;

the step of forming the insulating protection layer between the pixel electrode and the first black matrix, the second black matrix and the color resist layer further comprises:

forming the insulating protection layer in the first contact hole and the second contact hole; and

forming a third contact hole and a fourth contact hole in the insulating protection layer in the first contact hole and the second contact hole, respectively, wherein the pixel electrode is electrically coupled to one of the source electrode and the drain electrode through the third contact hole, and is electrically coupled to the second capacitor electrode through the fourth contact hole.