Resistive memory device, resistive memory, and operating method of the resistive memory device
An operating method for a resistive memory device includes; applying a bias control voltage to a memory cell array of the resistive memory device, measuring leakage current that occurs in the memory cell array in response to the applied bias control voltage to generate a measuring result, generating a control signal based on the measuring result, and adjusting a level of the bias control voltage in response to the control signal.
1. An operating method for a resistive memory device, the method comprising:
applying a bias control voltage to a memory cell array of the resistive memory device;
measuring leakage current that occurs in the memory cell array in response to the applied bias control voltage to generate a measuring result;
generating a control signal based on the measuring result; and
adjusting a level of the bias control voltage in response to the control signal.
2. The method of claim 1 , further comprising:
storing control information associated with the adjusting of the level of the bias control voltage.
3. The method of claim 1 , further comprising:
entering a test mode during a power-up period for the resistive memory device, wherein the applying of the bias control voltage, the measuring of the leakage current, the generating of the control signal, and the adjusting of the level of the bias control voltage are performed during the test mode.
4. The method of claim 1 , further comprising:
entering a normal mode for the resistive memory device during which normal memory operations may be performed,
wherein the applying of the bias control voltage, the measuring of the leakage current, the generating of the control signal, and the adjusting of the level of the bias control voltage are performed during the normal mode.
5. The method of claim 1 , wherein the measuring of the leakage current comprises:
measuring a forward leakage current using a measuring instrument connected to a wordline of the memory cell array; and
measuring a reverse leakage current using a measuring instrument connected to a bitline of the memory cell array.
6. The method of claim 5 , wherein the generating of the control signal comprises generating the control signal in response to an analysis of values of the forward leakage current and the reverse leakage current.
7. The method of claim 6 , wherein the generating of the control signal comprises generating the control signal based on an analysis of increase and decrease patterns for the forward leakage current and the reverse leakage current.
8. The method of claim 7 , wherein the adjusting of the level of the bias control voltage comprises adjusting a level of an inhibit voltage according to at least one of the values of the forward leakage current and the reverse leakage current.
9. The method of claim 5 , wherein the generating of the control signal comprises accessing a lookup table listing control information corresponding to the forward leakage current and the reverse leakage current.
10. The method of claim 1 , wherein the applying of the bias control voltage comprises applying a plurality of inhibit voltages to the memory cell array, wherein each one of the plurality of inhibit voltages has a level that is randomly set.
11. The operating method of claim 1 , wherein the applying of the bias control voltage comprises applying a plurality of inhibit voltages to the memory cell array, wherein each one of the plurality of inhibit voltages has a level that is set in accordance with a memory operation.
12. The operating method of claim 1 , wherein the memory cell array comprises a plurality of memory cell regions,
the measuring of the leakage current comprises measuring leakage current for each one of the plurality of memory cell regions to generate measuring results for each one of the plurality of memory cell regions,
the generating of the control signal based on the measuring result comprises generating a plurality of control signals based respectively on the measuring results for each one of the plurality of memory cell regions,
the bias control voltage comprises a plurality of inhibit voltages, and adjusting the level of the bias control voltage comprises respectively adjusting levels of the plurality of inhibit voltages in response to a corresponding one of the plurality of control signals.
13. The operating method of claim 1 , wherein the memory cell array comprises a wordlines and bitlines,
the bias control signal comprises first and second inhibit voltages, wherein a level of the first inhibit voltage provided to at least one of the wordlines is adjusted in response to the control signal, and a level of the second inhibit voltage provided to at least one of the bitlines is adjusted in response to the control signal.