Plasma abatement of compounds containing heavy atoms
A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH 4 , H 2 O, H 2 , NF 3 , SF 6 , F 2 , HCl, HF, Cl 2 , and HBr. Representative condensing abating reagents include, for example, H 2 , H 2 O, O 2 , N 2 , O 3 , CO, CO 2 , NH 3 , N 2 O, CH 4 , and combinations thereof.
1. A method of abating effluent from a processing chamber, the method comprising:
flowing an effluent from a processing chamber into a plasma source, wherein the effluent comprises at least one material to be abated;
flowing an abating reagent comprising methane into the plasma source; and
reacting the material in the effluent with the abating reagent in the presence of a plasma formed in the plasma source to convert the material in the effluent to a different material.
2. The method of claim 1 , wherein the material to be abated in the effluent comprises a heavy atom at least as heavy as an aluminum atom.
3. The method of claim 2 , further comprising performing a deposition process or an etch process in the processing chamber.
4. The method of claim 3 , wherein the abating reagent is a volatilizing abating reagent.
5. The method of claim 4 , wherein the material to be abated in the effluent comprises at least one of aluminum, silicon, tungsten, or titanium.
6. The method of claim 4 , wherein the volatilizing abating reagent further comprises at least one of H 2 , H 2 O, or ammonia.
7. The method of claim 6 , wherein the effluent is substantially free of fluorocarbons.
8. The method of claim 4 , wherein the volatilizing abating reagent further comprises at least one of BCl 3 , CCl 4 , SiCl 4 , NF 3 , SF 4 , SF 6 , or SF 8 .
9. The method of claim 4 , wherein the volatizing abating reagent further comprises at least one of F 2 , Cl 2 , Br 2 , or I 2 .
10. The method of claim 4 , wherein the volatizing abating reagent comprises at least one of HCl, HF, HBr, or HI.
11. A method of abating effluent from a processing chamber, the method comprising:
flowing an effluent from a processing chamber into a plasma source, wherein the effluent comprises at least one material to be abated, and the at least one material comprises Si, W, or a Ti-containing compound;
flowing an abating reagent comprising methane into the plasma source;
reacting the at lest one material in the effluent with the abating reagent in the presence of a plasma formed in the plasma source to convert the at least one material in the effluent to a methylated compound, wherein the plasma source is a magnetically enhanced capacitively coupled plasma source.